Model No: BCP5616QTA
Diodes Incorporated BCP5616QTA
Manufacturer: Diodes Incorporated
SEMICON NO.: BCP5616QTA
Package: SOT-223
Stock: In stock
Description: IC Transistor 80V 1A 2W 100
SEMICON NO.: BCP5616QTA
Package: SOT-223
Stock: In stock
Description: IC Transistor 80V 1A 2W 100
Quantity :
| Mfr | Diodes Incorporated |
| Device Type | NPN Medium Power Bipolar Junction Transistor (BJT) |
| Product Series | BCP5616Q |
| Collector-Emitter Voltage (Max) | 80 V |
| Continuous Collector Current (Max) | 1 A |
| Peak Pulse Collector Current (Max) | 2 A |
| Power Dissipation (Max) | 2 W |
| DC Current Gain (Min) | 100 |
| Collector-Emitter Saturation Voltage (Max) | 500 mV |
| Collector Cutoff Current (Max) | 100 nA |
| Transition Frequency (Min) | 150 MHz |
| Base-Emitter Voltage (Max) | 5 V |
| Operating Temperature | –65°C to +150°C |
| Package | SOT-223 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
BCP5616QTA | Diodes Incorporated NPN transistor, power transistor 80V N 1A SOT223
The BCP5616QTA is a Diodes Incorporated AEC-Q101 automotive BJT, an 80V NPN medium power transistor delivering 1 A and 2 W in a SOT223 power transistor package. Rated 80 V VCEO, 100 V VCBO and 5 V VEBO, it survives 2 A pulses, holds VCE(sat) to 500 mV max at 500 mA / 50 mA IB, and uses gain group 16 with hFE 100 to 250 at 150 mA / 2 V. Q adds AEC-Q101, PPAP capability, IATF16949 production and specific change control; TA is a 7-inch 1,000-piece reel. The SOT223 (TO-261AA) collector tab doubles as a heatsink, -55 C to +150 C junction.
The BCP5616QTA is a Diodes Incorporated AEC-Q101 automotive BJT, an 80V NPN medium power transistor delivering 1 A and 2 W in a SOT223 power transistor package. Rated 80 V VCEO, 100 V VCBO and 5 V VEBO, it survives 2 A pulses, holds VCE(sat) to 500 mV max at 500 mA / 50 mA IB, and uses gain group 16 with hFE 100 to 250 at 150 mA / 2 V. Q adds AEC-Q101, PPAP capability, IATF16949 production and specific change control; TA is a 7-inch 1,000-piece reel. The SOT223 (TO-261AA) collector tab doubles as a heatsink, -55 C to +150 C junction.
Key Features & Applications
● 80 V VCEO, 100 V VCBO, 5 V VEBO, 1 A IC, 2 A pulsed ICM; 2 W PD on 50 x 50 mm 1oz FR4 copper, 62 C/W RthetaJA, 19.4 C/W RthetaJL.
● VCE(sat) 0.5 V max at IC = 500 mA / IB = 50 mA, VBE(on) 1.0 V max, 100 nA ICBO, 20 nA IEBO.
● Gain group 16: hFE 100 to 250 at 150 mA / 2 V; 100 MHz min / 150 MHz typ fT, 25 pF Cobo.
● 4 kV HBM Class 3A, 400 V MM Class C ESD, AEC-Q101, PPAP capable, IATF16949 and complementary PNP BCP5316Q.
Official uses are medium-power switching or amplification and AF driver/output stages; this AEC-Q101 automotive BJT also drives low-side relays, solenoids, actuators and LED lighting in body and engine control and infotainment, plus linear regulator pass elements, MOSFET gate drivers, DC-DC converters, power management and battery-driven devices.
FAQ
Q: 16? Gain group 16, hFE 100 to 250 at 150 mA / 2 V; group 10 is 63 to 160.
Q: 2 W? Only with 50 x 50 mm 1oz copper on FR4 in still air; derate by 62 C/W.
Q: Base drive? Forced beta near 10 plus flyback protection for inductive loads.
Alternative power transistor Models
● BCP5616TA: standard 80 V / 1 A / hFE 100-250 SOT223 sibling without Q change control and PPAP.
● BCP5316QTA: complementary 80 V PNP automotive transistor for push-pull and high-side stages.
● BCP5416QTA: 45 V AEC-Q101 SOT223 member with 1 A, 2 W and gain group 16; BCP5610TA adds the lower group 10 gain band.
● BCP56-16-QX: Nexperia AEC-Q101 80 V / 1 A SOT223 with hFE 100 to 250 but 650 mW Ptot, needing thermal requalification.
● SBCP56-16T1G: onsemi AEC-Q101 80 V / 1 A SOT223 with 1.5 W Ptot, needing SOA and AEC review.
● 80 V VCEO, 100 V VCBO, 5 V VEBO, 1 A IC, 2 A pulsed ICM; 2 W PD on 50 x 50 mm 1oz FR4 copper, 62 C/W RthetaJA, 19.4 C/W RthetaJL.
● VCE(sat) 0.5 V max at IC = 500 mA / IB = 50 mA, VBE(on) 1.0 V max, 100 nA ICBO, 20 nA IEBO.
● Gain group 16: hFE 100 to 250 at 150 mA / 2 V; 100 MHz min / 150 MHz typ fT, 25 pF Cobo.
● 4 kV HBM Class 3A, 400 V MM Class C ESD, AEC-Q101, PPAP capable, IATF16949 and complementary PNP BCP5316Q.
Official uses are medium-power switching or amplification and AF driver/output stages; this AEC-Q101 automotive BJT also drives low-side relays, solenoids, actuators and LED lighting in body and engine control and infotainment, plus linear regulator pass elements, MOSFET gate drivers, DC-DC converters, power management and battery-driven devices.
FAQ
Q: 16? Gain group 16, hFE 100 to 250 at 150 mA / 2 V; group 10 is 63 to 160.
Q: 2 W? Only with 50 x 50 mm 1oz copper on FR4 in still air; derate by 62 C/W.
Q: Base drive? Forced beta near 10 plus flyback protection for inductive loads.
Alternative power transistor Models
● BCP5616TA: standard 80 V / 1 A / hFE 100-250 SOT223 sibling without Q change control and PPAP.
● BCP5316QTA: complementary 80 V PNP automotive transistor for push-pull and high-side stages.
● BCP5416QTA: 45 V AEC-Q101 SOT223 member with 1 A, 2 W and gain group 16; BCP5610TA adds the lower group 10 gain band.
● BCP56-16-QX: Nexperia AEC-Q101 80 V / 1 A SOT223 with hFE 100 to 250 but 650 mW Ptot, needing thermal requalification.
● SBCP56-16T1G: onsemi AEC-Q101 80 V / 1 A SOT223 with 1.5 W Ptot, needing SOA and AEC review.
