Model No: BFU550AR
NXP USA Inc. BFU550AR
Manufacturer: NXP USA Inc.
SEMICON NO.: BFU550AR
Package: SOT-23 (TO-236AB)
Stock: In stock
Description: IC RF Transistor NPN 12V 11GHz SOT-23
SEMICON NO.: BFU550AR
Package: SOT-23 (TO-236AB)
Stock: In stock
Description: IC RF Transistor NPN 12V 11GHz SOT-23
Quantity :
| Mfr | NXP USA Inc. |
| Transistor Type | NPN |
| Voltage-Collector Emitter Breakdown (Max) | 12 V |
| Frequency-Transition (fT) | 11 GHz |
| Noise Figure (Typical) | 0.6 dB @ 900 MHz |
| Gain | 18 dB |
| Max. DC Current Gain (hFE) | 60 (Min) @ 15mA, 8V |
| Max. Continuous Collector Current (IC) | 50 mA |
| Max. Power Dissipation (Pd) | 450 mW |
| Operating Temperature | -40°C ~ +150° |
| Package | SOT-23 (TO-236AB) |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
BFU550AR RF Transistor Chip
TheBFU550AR is a high-performance NPN wideband silicon RF transistor designed for applications requiring high-frequency operation and low noise. Manufactured by NXP Semiconductors, this device is suitable for small signal to medium power applications up to 2 GHz.
BFU550AR NPN Transistor Key Specifications
The BFU550AR features a wide operating frequency range up to 11 GHz, making it suitable for high-frequency applications. It supports a maximum collector current (IC) of 50mA and a power dissipation of 450mW. The device offers a minimum DC current gain (hFE) of 60, ensuring reliable amplification. It operates from a supply voltage of up to 12V and features a collector-emitter voltage (VCE) of 12V. The BFU550AR is housed in a compact SOT-23 package, ideal for surface-mount applications. It operates within a temperature range of -40°C to +150°C, ensuring reliability in various environmental conditions. Additionally, the BFU550AR is AEC-Q101 qualified, making it suitable for automotive applications.
Alternative Low Noise TransistorModels
● BFU550A: A variant with similar performance characteristics but available in a different package type, suitable for applications requiring alternative form factors.
● BFU550ARW: A variant with a slightly different package type, offering flexibility in design choices.
● BFU550ART: Another variant available in tape and reel packaging, suitable for high-volume production.
TheBFU550AR is a high-performance NPN wideband silicon RF transistor designed for applications requiring high-frequency operation and low noise. Manufactured by NXP Semiconductors, this device is suitable for small signal to medium power applications up to 2 GHz.
BFU550AR NPN Transistor Key Specifications
The BFU550AR features a wide operating frequency range up to 11 GHz, making it suitable for high-frequency applications. It supports a maximum collector current (IC) of 50mA and a power dissipation of 450mW. The device offers a minimum DC current gain (hFE) of 60, ensuring reliable amplification. It operates from a supply voltage of up to 12V and features a collector-emitter voltage (VCE) of 12V. The BFU550AR is housed in a compact SOT-23 package, ideal for surface-mount applications. It operates within a temperature range of -40°C to +150°C, ensuring reliability in various environmental conditions. Additionally, the BFU550AR is AEC-Q101 qualified, making it suitable for automotive applications.
Alternative Low Noise TransistorModels
● BFU550A: A variant with similar performance characteristics but available in a different package type, suitable for applications requiring alternative form factors.
● BFU550ARW: A variant with a slightly different package type, offering flexibility in design choices.
● BFU550ART: Another variant available in tape and reel packaging, suitable for high-volume production.
