Model No: PMV130ENEAR
Nexperia USA Inc. PMV130ENEAR
Manufacturer: Nexperia USA Inc.
SEMICON NO.: PMV130ENEAR
Package: TO-236AB
Stock: In stock
Description: N Channel FET Field-Effect Transistor
SEMICON NO.: PMV130ENEAR
Package: TO-236AB
Stock: In stock
Description: N Channel FET Field-Effect Transistor
Quantity :
| Mfr | Nexperia USA Inc. |
| Product Series | Trench MOSFET (Automotive Grade) |
| Device Type | N-Channel Enhancement Mode Field-Effect Transistor (FET) |
| Technology | Trench MOSFET |
| Drain-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) @ 25°C | 2.1 A (Ta) |
| Power Dissipation (Pd) | 460 mW (Ta) / 5 W (Tc) |
| Drain-Source On-Resistance (Rds(on)) (Max) | 120 mΩ @ 1.5A, 10V |
| Drain-Source On-Resistance (Rds(on)) (Typ) | 95 mΩ |
| Gate-Source Threshold Voltage (Vgs(th)) (Max) | 2.5 V @ 250 µA |
| Gate Charge (Qg) (Max) | 3.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) | 170 pF @ 20 V |
| Maximum Gate-Source Voltage (Vgs) | ±20 V |
| Operating Temperature | -55°C to +150°C |
| Package | TO-236AB |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
PMV130ENEAR Field-Effect Transistor
The PMV130ENEAR is an automotive-grade N-channel enhancement mode trench MOSFET from Nexperia, delivering 40V drain-source voltage rating with 2.1A continuous drain current capability in a compact SOT-23 (TO-236AB) surface-mount package . This high-performance power transistor utilizes advanced Trench MOSFET technology to achieve exceptionally low on-resistance of just 120mΩ maximum at VGS=10V and 160mΩ at VGS=4.5V, ensuring minimal conduction losses and high efficiency in switching applications . Operating across an extended junction temperature range from -55°C to +175°C and qualified to AEC-Q101 standards, this device is specifically designed to meet the stringent reliability requirements of automotive and industrial applications . The device features logic-level compatibility with threshold voltage of 1.6V typical, enabling direct drive from 3.3V and 5V microcontroller outputs without additional level shifting circuitry .
PMV130ENEAR FET transistorApplications
● Automotive Power Systems: Relay drivers, power window controls, mirror adjustment modules, and LED lighting drivers requiring AEC-Q101 qualification and high-temperature operation .
● Battery Management: Low-side load switching, battery protection circuits, and power distribution modules in electric and hybrid vehicles leveraging low Rds(on) for minimal power loss .
● Infotainment Systems: Power management switches, display backlighting controls, and audio amplifier muting circuits benefiting from fast switching speeds and low gate charge .
● Industrial Controls: High-speed line drivers, solenoid drivers, and motor control interfaces requiring robust switching performance and extended temperature range .
● Consumer Electronics: Portable device power switches, DC-DC converter synchronous rectifiers, and load switching applications where compact size and efficiency are critical .
● Telecommunications: Base station power supplies, network equipment switching regulators, and RF power amplifier control circuits requiring reliable high-frequency operation .
Alternativeautomotive MOSFETs
● PMV130ENEA: Base part number without tape-and-reel suffix, offering identical electrical characteristics and AEC-Q101 qualification for non-automotive industrial applications requiring the same performance.
● IRLML2502: International Rectifier's logic-level N-channel MOSFET with comparable 40V/2A ratings and SOT-23 package, serving as a widely available alternative for general-purpose switching applications.
● 2N7002: ON Semiconductor's popular small-signal MOSFET offering lower current capability but similar package and threshold characteristics for cost-sensitive low-power designs.
● BSS138: Fairchild/ON Semiconductor's industry-standard N-channel MOSFET featuring lower voltage rating but established supply chain availability for non-automotive consumer electronics.
● CPH3455-TL-H: ON Semiconductor's automotive-qualified alternative providing similar 40V voltage rating with enhanced current capability for higher power automotive switching applications.
The PMV130ENEAR is an automotive-grade N-channel enhancement mode trench MOSFET from Nexperia, delivering 40V drain-source voltage rating with 2.1A continuous drain current capability in a compact SOT-23 (TO-236AB) surface-mount package . This high-performance power transistor utilizes advanced Trench MOSFET technology to achieve exceptionally low on-resistance of just 120mΩ maximum at VGS=10V and 160mΩ at VGS=4.5V, ensuring minimal conduction losses and high efficiency in switching applications . Operating across an extended junction temperature range from -55°C to +175°C and qualified to AEC-Q101 standards, this device is specifically designed to meet the stringent reliability requirements of automotive and industrial applications . The device features logic-level compatibility with threshold voltage of 1.6V typical, enabling direct drive from 3.3V and 5V microcontroller outputs without additional level shifting circuitry .
PMV130ENEAR FET transistorApplications
● Automotive Power Systems: Relay drivers, power window controls, mirror adjustment modules, and LED lighting drivers requiring AEC-Q101 qualification and high-temperature operation .
● Battery Management: Low-side load switching, battery protection circuits, and power distribution modules in electric and hybrid vehicles leveraging low Rds(on) for minimal power loss .
● Infotainment Systems: Power management switches, display backlighting controls, and audio amplifier muting circuits benefiting from fast switching speeds and low gate charge .
● Industrial Controls: High-speed line drivers, solenoid drivers, and motor control interfaces requiring robust switching performance and extended temperature range .
● Consumer Electronics: Portable device power switches, DC-DC converter synchronous rectifiers, and load switching applications where compact size and efficiency are critical .
● Telecommunications: Base station power supplies, network equipment switching regulators, and RF power amplifier control circuits requiring reliable high-frequency operation .
Alternativeautomotive MOSFETs
● PMV130ENEA: Base part number without tape-and-reel suffix, offering identical electrical characteristics and AEC-Q101 qualification for non-automotive industrial applications requiring the same performance.
● IRLML2502: International Rectifier's logic-level N-channel MOSFET with comparable 40V/2A ratings and SOT-23 package, serving as a widely available alternative for general-purpose switching applications.
● 2N7002: ON Semiconductor's popular small-signal MOSFET offering lower current capability but similar package and threshold characteristics for cost-sensitive low-power designs.
● BSS138: Fairchild/ON Semiconductor's industry-standard N-channel MOSFET featuring lower voltage rating but established supply chain availability for non-automotive consumer electronics.
● CPH3455-TL-H: ON Semiconductor's automotive-qualified alternative providing similar 40V voltage rating with enhanced current capability for higher power automotive switching applications.
