Model No: PMPB55XNEAX
Nexperia USA Inc. PMPB55XNEAX
Manufacturer: Nexperia USA Inc.
SEMICON NO.: PMPB55XNEAX
Package: DFN2020MD-6
Stock: In stock
Description: MOSFET N-CH 30V 3.8A 6DFN
SEMICON NO.: PMPB55XNEAX
Package: DFN2020MD-6
Stock: In stock
Description: MOSFET N-CH 30V 3.8A 6DFN
Quantity :
| Mfr | Nexperia USA Inc. |
| Configuration | 2-Line (Dual-Channel) Protection Array |
| Working Voltage (VWM) | 5.5 V |
| Breakdown Voltage (VBR) | 6.2 V (Min) |
| Clamping Voltage (VC) | 10.5 V (Max) |
| Peak Pulse Current (IPP) | 5.0 A (8/20 µs) |
| ESD Protection Level | ±20 kV |
| Dynamic Resistance (RDYN) | 0.35 Ω (Typical) |
| Low Load Capacitance | 0.3 pF |
| Leakage Current (IR) | 0.1 µA (Max) |
| Operating Temperature | -55°C to +150°C |
| Package | DFN2020MD-6 |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
PMPB55XNEAX PNP transistor
ThePMPB55XNEAX is a general-purpose PNP bipolar junction transistor (BJT) from Nexperia, designed for use in amplification and switching applications. This device is part of a family of surface-mount transistors characterized by high current capability and low saturation voltage, making it suitable for a broad range of electronic circuits. Packaged in a compact SOT89 surface-mount package, it balances power handling with a small footprint. Its typical roles include functioning as a low-side switch, in linear amplification stages, or in driver circuits for motors, relays, and LEDs where PNP polarity is required.
PMPB55XNEAX ESD Diode Array Specifications
This transistor is a PNP type with a collector-emitter voltage (VCEO) of -50V and a continuous collector current (IC) rating of -500mA, allowing it to handle moderate power levels. It offers a DC current gain (hFE) typically in the range of 100 to 250, providing good signal amplification. Key characteristics include a low collector-emitter saturation voltage, which minimizes power loss when the transistor is fully on (saturated). The SOT89 package features a metal tab that enhances thermal performance by providing an efficient path for heat dissipation. It is characterized for operation over a junction temperature range of -55°C to +150°C.
AlternativePNP switching transistorModels
● ON Semiconductor MMBT5401LT1G: A widely used PNP general-purpose transistor in a SOT-23 package with a -150V VCEO rating, suitable for higher-voltage, lower-current switching.
● Diodes Incorporated BC857B-13-F: A general-purpose PNP transistor in SOT-23 package with complementary NPN pairs available, commonly used for amplification and switching.
● ROHM 2SA1037AK-13#T00: A PNP transistor in a SOT-89 package with similar current and voltage ratings, designed for audio amplification and general switching.
ThePMPB55XNEAX is a general-purpose PNP bipolar junction transistor (BJT) from Nexperia, designed for use in amplification and switching applications. This device is part of a family of surface-mount transistors characterized by high current capability and low saturation voltage, making it suitable for a broad range of electronic circuits. Packaged in a compact SOT89 surface-mount package, it balances power handling with a small footprint. Its typical roles include functioning as a low-side switch, in linear amplification stages, or in driver circuits for motors, relays, and LEDs where PNP polarity is required.
PMPB55XNEAX ESD Diode Array Specifications
This transistor is a PNP type with a collector-emitter voltage (VCEO) of -50V and a continuous collector current (IC) rating of -500mA, allowing it to handle moderate power levels. It offers a DC current gain (hFE) typically in the range of 100 to 250, providing good signal amplification. Key characteristics include a low collector-emitter saturation voltage, which minimizes power loss when the transistor is fully on (saturated). The SOT89 package features a metal tab that enhances thermal performance by providing an efficient path for heat dissipation. It is characterized for operation over a junction temperature range of -55°C to +150°C.
AlternativePNP switching transistorModels
● ON Semiconductor MMBT5401LT1G: A widely used PNP general-purpose transistor in a SOT-23 package with a -150V VCEO rating, suitable for higher-voltage, lower-current switching.
● Diodes Incorporated BC857B-13-F: A general-purpose PNP transistor in SOT-23 package with complementary NPN pairs available, commonly used for amplification and switching.
● ROHM 2SA1037AK-13#T00: A PNP transistor in a SOT-89 package with similar current and voltage ratings, designed for audio amplification and general switching.
