Model No: BC869-25,115

Nexperia USA Inc. BC869-25,115

Manufacturer: Nexperia USA Inc.
SEMICON NO.: BC869-25,115
Package: SOT-89
Stock: In stock
Description: Bipolar Transistor PNP -20V -2A 500 mW
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 Mfr      Nexperia USA Inc. 
 Device Type  PNP Medium Power Transistor
 Collector-Emitter Voltage (VCEO -20 V
 Collector-Base Voltage (VCBO)   -32 V
 Emitter-Base Voltage (VEBO -5 V
 Collector Current (IC -2 A
 Peak Collector Current (ICM)   -3 A
 Total Power Dissipation (Ptot 1.35 W
 DC Current Gain (hFE) 160 to 375
 Collector-Emitter Saturation Voltage (VCEsat -600 mV @ 200mA, 2A
 Collector Cut-off Current (ICBO)   -100 nA
 Junction Temperature (Tj)   150 °C
 Package SOT-89
 Mounting Type
 Surface Mount
 Compliance    
 RoHS Compliant
BC869-25,115BJT Transistor 
The BC869-25,115 is a PNP medium-power BJT Transistor manufactured by Nexperia. Rated for a maximum collector-emitter breakdown voltage of 20V and a continuous collector current of 2A, it delivers a transition frequency of 140MHz and a minimum DC current gain (hFE) of 160 at 500mA, 1V, placing it firmly in the high-current, medium-power discrete transistor class. The device is qualified to AEC-Q101 for automotive applications, operates across a junction temperature range up to 150°C, and serves as the PNP counterpart to Nexperia's BC868 NPN transistor. With its exposed heatsink pad for excellent thermal and electrical conductivity, the BC869-25,115 is purpose-built for space-efficient, high-reliability switching and amplification tasks in automotive, industrial, and battery-powered systems. Additional highlights include a very low collector cutoff current of just 100nA (ICBO), a high transition frequency of 140MHz for fast switching, and full AEC-Q101 automotive qualification for harsh-environment deployment. 
The BC869-25,115 is extensively deployed wherever a high-current PNP switch or amplifier is required in a compact SMD footprint. It is commonly designed into linear voltage regulators and power management circuits that need a reliable series pass element with good thermal behavior. In battery-driven devices and portable equipment, the transistor serves as an efficient high-side switch, controlling LED arrays, buzzers, small motors, and other loads from a positive rail. It also functions as a MOSFET driver and pre-driver stage in power conversion systems, leveraging its 2A capability and 140MHz transition frequency to deliver crisp, low-loss gate control. Audio and signal amplifiers benefit from its consistent hFE and low saturation characteristics, while its AEC-Q101 qualification extends its use into automotive body electronics, infotainment power stages, and under-hood control modules. 
Alternative PNP transistor Models
1. BCX6925TA (Diodes Incorporated): A PNP SOT-89 transistor rated at 20V, 1A, and 1W with a 100MHz transition frequency, providing a higher power-dissipation alternative when the 2A current capability can be relaxed.
2. DCX69-25-13 (Diodes Incorporated): A PNP SOT-89 transistor offering 20V, 1A, and 1W operation at 200MHz, suitable for applications that prioritize higher transition frequency over peak current handling.
3. 2SAR293PHZGT100 (ROHM Semiconductor): A PNP SOT-89 transistor with automotive-grade qualification and 20V operation, available as a similar alternative that brings ROHM's process technology to BC869-25,115-class designs.