Model No: 1PS79SB30,115
Nexperia USA Inc. 1PS79SB30,115
Manufacturer: Nexperia USA Inc.
SEMICON NO.: 1PS79SB30,115
Package: SOD-523
Stock: In stock
Description: Diode 40 V 200mA SOD-523
SEMICON NO.: 1PS79SB30,115
Package: SOD-523
Stock: In stock
Description: Diode 40 V 200mA SOD-523
Quantity :
| Mfr | Nexperia USA Inc. |
| Device Type | Planar Schottky Barrier Diode |
| Diode Configuration | Single |
| Repetitive Peak Reverse Voltage (Vrrm) / DC Reverse Voltage (Vr) | 40 V |
| Average Rectified Current (Io) | 200 mA |
| Forward Voltage Drop (Vf) | 600 mV @ 200 mA |
| Reverse Current (Ir) | 500 nA @ 25 V |
| Non-Repetitive Peak Surge Current (Ifsm) | 1 A |
| Diode Capacitance (Cd) | 20 pF @ 1V, 1MHz |
| Operating Temperature | -65°C to +150°C |
| Package | SOD-523 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
1PS79SB30,115 Schottky barrier diode
The 1PS79SB30,115 from Nexperia is a dual common-cathode , configured as a pair of independent diodes within a small surface-mount SOD523 package. Designed for high-frequency applications, this device features very low forward voltage drop and ultrafast switching characteristics due to its Schottky construction. Each diode has a repetitive peak reverse voltage of 30 V and a continuous forward current rating of 200 mA. Its compact form factor and low leakage current make it an ideal solution for space-constrained circuits requiring efficient rectification, signal clamping, or protection in portable electronics and communication devices.
1PS79SB30,115 Schottky diode Core Features
The diode utilizes Schottky (metal-semiconductor) junction technology, which provides a lower forward voltage (typically 380 mV at 100 mA) compared to standard PN junction diodes, minimizing power loss. The dual common-cathode configuration means both diode anodes are independent, but their cathodes are connected internally to a single pin, simplifying PCB layout in circuits where two diodes need to be referenced to the same ground or supply rail.
AlternativeSchottky DiodeModels
● BAT54S: A widely used SOT-23 dual series Schottky diode with a 30 V rating, offering similar common-cathode configuration for general-purpose applications.
● RB751S40T1G: onsemi's dual common-cathode Schottky diode in a SOT-23 package, featuring a very low forward voltage for improved efficiency.
● PMEG2005EH: Nexperia's own dual Schottky barrier diode in an alternative package (SOT666) with extremely low forward voltage, optimized for energy harvesting and low-voltage circuits.
● CMSH2-30: Central Semiconductor's dual Schottky diode with common cathode in a SOT-23 package, designed for high-speed switching and general-purpose use.
The 1PS79SB30,115 from Nexperia is a dual common-cathode , configured as a pair of independent diodes within a small surface-mount SOD523 package. Designed for high-frequency applications, this device features very low forward voltage drop and ultrafast switching characteristics due to its Schottky construction. Each diode has a repetitive peak reverse voltage of 30 V and a continuous forward current rating of 200 mA. Its compact form factor and low leakage current make it an ideal solution for space-constrained circuits requiring efficient rectification, signal clamping, or protection in portable electronics and communication devices.
1PS79SB30,115 Schottky diode Core Features
The diode utilizes Schottky (metal-semiconductor) junction technology, which provides a lower forward voltage (typically 380 mV at 100 mA) compared to standard PN junction diodes, minimizing power loss. The dual common-cathode configuration means both diode anodes are independent, but their cathodes are connected internally to a single pin, simplifying PCB layout in circuits where two diodes need to be referenced to the same ground or supply rail.
AlternativeSchottky DiodeModels
● BAT54S: A widely used SOT-23 dual series Schottky diode with a 30 V rating, offering similar common-cathode configuration for general-purpose applications.
● RB751S40T1G: onsemi's dual common-cathode Schottky diode in a SOT-23 package, featuring a very low forward voltage for improved efficiency.
● PMEG2005EH: Nexperia's own dual Schottky barrier diode in an alternative package (SOT666) with extremely low forward voltage, optimized for energy harvesting and low-voltage circuits.
● CMSH2-30: Central Semiconductor's dual Schottky diode with common cathode in a SOT-23 package, designed for high-speed switching and general-purpose use.
