NANYA NT5AD256M16E4-JR - Semicone IC Supplier

Mfr	NANYA
Device Type	DDR4 SDRAM
Memory Density	4 Gbit
Memory Organization	256M x 16
Memory Format	DDR4 SDRAM
Technology	CMOS
Clock Frequency (Max)	1600 MHz (fCLK)
Data Rate	3200 Mbps
CAS Latency	CL22
Supply Voltage (VDD)	1.2 V (Nominal)
Supply Voltage Range	1.14 V to 1.26 V
Standby Current (Max)	59 mA
Supply Current (Max)	348 mA
I/O Type	COMMON
Operating Temperature	-
Package	96-ball TFBGA
Mounting Type	Surface Mount
Compliance	RoHS Compliant

The NT5AD256M16E4-JR from Nanya Technology is a 4Gb (512MB) DDR4 SDRAM chip organized as 256M x 16 with a high-speed DDR4-3200 data rate in a compact 96-ball FBGA package. Operating at the standard 1.2V DDR4 supply voltage with a 1600MHz clock frequency, this Nanya DDR4 memory chip delivers a bandwidth of 25.6 GB/s per 64-bit channel with CL22 timing, making it fully JEDEC compliant for mainstream system designs. The E4 die revision ensures stable electrical performance across the commercial operating temperature range of 0°C to 95°C, while the x16 data width reduces chip count for a 64-bit bus from eight (x8 devices) to just four, simplifying PCB layout and lowering BOM cost. As a mass-production component from one of the world's leading DRAM suppliers, this 4Gb DDR4 SDRAM in FBGA-96 provides a cost-effective, high-density solution for embedded computing, consumer electronics, and IoT applications requiring fast DDR4-3200 memory in compact form factors.
Application Scenarios
The NT5AD256M16E4-JR Nanya DDR4 SDRAM is widely deployed in consumer electronics including Chromebooks, budget laptops, 4K smart TV boxes, and smart speakers where cost-effective x16 memory is needed for the primary RAM subsystem. In industrial control boards and IoT gateways, the 4Gb density provides sufficient 512MB capacity for Linux-based embedded systems while maintaining commercial-grade reliability. Router and networking equipment leverages this DDR4 chip for packet buffering and firmware execution, while single-board computer designs benefit from the x16 bus width that minimizes routing complexity on dense PCBs.
Frequently Asked Questions
Q1: What is the capacity of NT5AD256M16E4-JR? This is a 4Gb DDR4 SDRAM chip equal to 512MB per device, allowing single-chip designs or 1GB/2GB configurations with two or four chips.
Q2: Can this chip replace Samsung, SK Hynix, or Micron parts? Yes, functional equivalents include Samsung K4A4G165WE, SK Hynix H5AN4G6NAFR, and Micron MT40A256M16 with matching 4Gb x16 DDR4-3200 specs, subject to controller compatibility validation.
Alternative DDR4 memory chips
1. K4A4G165WE-BCTD (Samsung): A functionally equivalent 4Gb x16 DDR4-3200 SDRAM in 96-ball FBGA from Samsung, offering second-source flexibility for BOM risk management.
2. H5AN4G6NAFR-XNC (SK Hynix): The SK Hynix cross-reference 4Gb x16 DDR4 chip with identical speed grade and package footprint for drop-in replacement designs.
3. MT40A256M16 (Micron): Micron's 4Gb x16 DDR4 SDRAM with 1.2V/2.5V dual supply and 3200Mbps data rate in 96-ball FBGA, providing JEDEC-compliant alternative sourcing.
4. NT5AD256M16E4-JRI (Nanya): The industrial-grade version of the same 4Gb x16 DDR4 chip with extended -40°C to 95°C operation for harsh environment deployments.