Model No: IRLML6402TRPBF
Infineon Technologies IRLML6402TRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRLML6402TRPBF
Package: SOT-23-3
Stock: In stock
Description: MOSFET P-Channel -20V -3.7A 65mΩ
SEMICON NO.: IRLML6402TRPBF
Package: SOT-23-3
Stock: In stock
Description: MOSFET P-Channel -20V -3.7A 65mΩ
Quantity :
| Mfr | Infineon Technologies |
| Product Series | HEXFET® |
| Device Type | P-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (VDS) | -20 V |
| Gate-Source Voltage (VGS) | ±12 V |
| Continuous Drain Current (ID) @ TA = 25°C | -3.7 A |
| Power Dissipation (PD) @ TA = 25°C | 1.3 W |
| Drain-Source On-Resistance (RDS(on)) - Max | 65 mΩ @ VGS = -4.5V, ID = -3.7A |
| Gate Threshold Voltage (VGS(th)) - Max | -1.2 V @ ID = -250µA |
| Gate Charge (Qg) - Typ/Max | 8 nC (Typ) / 12 nC (Max) @ VGS = -5V |
| Input Capacitance (Ciss) - Max | 633 pF @ VDS = -10V |
| Output Capacitance (Coss) - Typ | 145 pF |
| Reverse Transfer Capacitance (Crss) - Typ | 110 pF |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-23-3 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The IRLML6402TRPBF from Infineon (International Rectifier) is a -20V single P-channel HEXFET power MOSFET in a Micro3 (SOT-23) package featuring ultra-low on-resistance, fast switching, and logic-level gate drive. This P-channel MOSFET delivers a maximum RDS(on) of 65 mΩ at VGS = -4.5V with a continuous drain current rating of -3.7A at 25°C (-2.2A at 70°C) and pulsed drain current of -22A. Its logic-level gate is fully specified at -2.5V and -4.5V, making it directly drivable by 3.3V and 5V microcontrollers. The thermally enhanced large-pad leadframe incorporated into the SOT-23 package achieves the industry's smallest footprint with a low profile under 1.1mm, ideal for space-constrained portable applications.
Application Scenarios
The IRLML6402TRPBF P-channel MOSFET is extensively deployed in battery management and load switching circuits for portable electronics including smartphones, tablets, wearables, and PCMCIA cards where space is at a premium. As a high-side switch, it serves power muxing, reverse-battery protection, and power-rail isolation in low-voltage systems. Typical applications include battery charger switches, DC/DC converter synchronous rectification at low voltage, load switches for USB power paths, motor drivers for small actuators, and general power management in IoT devices, consumer electronics, and compact industrial control boards requiring logic-level switching.
Frequently Asked Questions
Q1: Can the IRLML6402TRPBF be driven directly from a 3.3V microcontroller GPIO? Yes, the logic-level gate is specified at -2.5V, ensuring adequate enhancement at 3.3V for full current capability up to -3.1A.
Q2: What is the body diode forward voltage drop? The integrated source-drain diode exhibits -1.2V maximum forward voltage at IS = -1.0A with 29ns typical reverse recovery time.
Alternative logic-level MOSFET Models
● IRLML6401TRPBF: The higher-voltage -12V sibling in the same Micro3 SOT-23 package with different RDS(on) rating for lower-voltage rails.
● IRLML2502TRPBF: The complementary N-channel logic-level MOSFET in the same SOT-23 footprint for low-side switching configurations.
● IRLML6302TRPBF: A lower-current -12V P-channel variant in SOT-23 for reduced-power battery switching applications.
● PMV50XPR (Nexperia): A 25V P-channel Trench MOSFET alternative with similar logic-level gate characteristics in SOT-23 packaging.
● VB2290 (VBsemi): A modern Chinese-designed P-channel SOT-23 MOSFET offering an upgraded replacement path with 65mΩ RDS(on) for supply-chain diversification.
Application Scenarios
The IRLML6402TRPBF P-channel MOSFET is extensively deployed in battery management and load switching circuits for portable electronics including smartphones, tablets, wearables, and PCMCIA cards where space is at a premium. As a high-side switch, it serves power muxing, reverse-battery protection, and power-rail isolation in low-voltage systems. Typical applications include battery charger switches, DC/DC converter synchronous rectification at low voltage, load switches for USB power paths, motor drivers for small actuators, and general power management in IoT devices, consumer electronics, and compact industrial control boards requiring logic-level switching.
Frequently Asked Questions
Q1: Can the IRLML6402TRPBF be driven directly from a 3.3V microcontroller GPIO? Yes, the logic-level gate is specified at -2.5V, ensuring adequate enhancement at 3.3V for full current capability up to -3.1A.
Q2: What is the body diode forward voltage drop? The integrated source-drain diode exhibits -1.2V maximum forward voltage at IS = -1.0A with 29ns typical reverse recovery time.
Alternative logic-level MOSFET Models
● IRLML6401TRPBF: The higher-voltage -12V sibling in the same Micro3 SOT-23 package with different RDS(on) rating for lower-voltage rails.
● IRLML2502TRPBF: The complementary N-channel logic-level MOSFET in the same SOT-23 footprint for low-side switching configurations.
● IRLML6302TRPBF: A lower-current -12V P-channel variant in SOT-23 for reduced-power battery switching applications.
● PMV50XPR (Nexperia): A 25V P-channel Trench MOSFET alternative with similar logic-level gate characteristics in SOT-23 packaging.
● VB2290 (VBsemi): A modern Chinese-designed P-channel SOT-23 MOSFET offering an upgraded replacement path with 65mΩ RDS(on) for supply-chain diversification.
