Model No: IRL6372TRPBF
Infineon Technologies IRL6372TRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRL6372TRPBF
Package: 8-SOIC
Stock: In stock
Description: MOSFET Dual N-Channel 30V 8.1A
SEMICON NO.: IRL6372TRPBF
Package: 8-SOIC
Stock: In stock
Description: MOSFET Dual N-Channel 30V 8.1A
Quantity :
| Mfr | Infineon Technologies |
| Device Type | Dual N-Channel MOSFET |
| Product Series | HEXFET® |
| Drain-Source Voltage | 30 V |
| Continuous Drain Current @ 25°C | 8.1 A |
| Power Dissipation | 2 W |
| Drain-Source On-Resistance | 17.9 mΩ (Max), 14 mΩ (Typ) |
| Gate Threshold Voltage | 1.1 V (Max) |
| Gate Charge | 11 nC (Max) |
| Input Capacitance | 1020 pF (Max) |
| Reverse Transfer Capacitance | 68 pF (Max) |
| Operating Temperature | -55°C to +150°C |
| Package | 8-SOIC |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IRL6372TRPBF is an Infineon dual N‑channel HEXFET power MOSFET housed in standard SO‑8 surface‑mount package, built with trench technology for logic‑level gate drive operation, delivering 30V drain‑source voltage rating and 8.1A continuous drain current per channel, featuring low 17.9mΩ maximum on‑state resistance at 4.5V gate bias, low gate charge of 11nC, wide operating junction temperature from ‑55℃ to 150℃, MSL1 moisture sensitivity and RoHS‑compliant lead‑free construction to support compact multi‑channel power switching for consumer, industrial and battery‑powered hardware.
This dual MOSFET device is extensively adopted for DC‑DC converter circuits, load switching modules, battery management circuits, motor drive H‑bridge assemblies, USB power distribution boards, portable instrument power control units and industrial sensor power supplies, where designers require two independent high‑performance low‑voltage switching channels within limited board space to realize power gating, polarity control or bidirectional current switching functions.
Common questions
Q: Can IRL6372TRPBF be driven directly by 3.3V microcontroller pins?
A: Yes, its logic‑level gate supports 3.3V driving, yet adequate gate current should be guaranteed for stable switching.
Q: Are two internal channels fully isolated?
A: Two MOSFETs are independent, users must prevent cross‑channel short circuit on PCB layout.
Alternative power MOSFET models
1. IRF7314TRPBF: SO‑8 packaged dual N‑channel MOSFET with 20V voltage rating, optimized for lower‑voltage circuits with superior on‑resistance performance.
2. IRF7351TRPBF: Dual N‑channel SO‑8 MOSFET offering higher current capacity, ideal for high‑load switching scenarios under 30V system voltage.
3. IRL6372PBF: Through‑hole variant of IRL6372 series with identical electrical parameters, designed for non‑SMT assembly requirements.
