Model No: IPA65R150CFD
Infineon Technologies IPA65R150CFD
Manufacturer: Infineon Technologies
SEMICON NO.: IPA65R150CFD
Package: PG-TO220
Stock: In stock
Description: MOSFET N-channel 650 V
SEMICON NO.: IPA65R150CFD
Package: PG-TO220
Stock: In stock
Description: MOSFET N-channel 650 V
Quantity :
| Mfr | Infineon Technologies |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Breakdown Voltage | 650 V |
| Continuous Drain Current | 22.4 A @ 25°C |
| Pulsed Drain Current | 72 A |
| Power Dissipation | 34.7 W |
| Gate-Source Voltage | ±20 V |
| Gate Charge | 86 nC @ 10V (Max) |
| Input Capacitance | 2340 pF @ 100V (Max) |
| Operating Temperature | -55°C to +150°C |
| Package | PG-TO220 |
| Mounting Type | Through Hole |
| Compliance | RoHS Compliant |
The IPA65R150CFD is an N-channel enhancement-mode CoolMOS CFD2 superjunction power MOSFET from Infineon, housed in TO-220FP fully isolated through-hole tube package, rated for 650V drain-source voltage, 22.4A continuous drain current and 72A pulsed drain current, featuring maximum 150mΩ Rds(on) at VGS=10V, 86nC typical gate charge and integrated fast body diode, operating from -55°C to +150°C junction temperature, optimized for high-efficiency offline power conversion with soft commutation and low EMI performance.
Key Features
- CoolMOS CFD2 superjunction technology with built-in fast recovery body diode, delivering soft switching behavior to reduce electromagnetic interference in high voltage converters.
- 650V VDS rating, 22.4A continuous drain current and low 150mΩ maximum on-resistance at 10V gate drive, minimizing conduction losses for medium-power offline topologies.
- Low total gate charge of 86nC and optimized device capacitances, balancing switching speed and power loss for flyback, PFC and resonant converter designs.
- TO-220FP isolated package with 34.7W total power dissipation rating, separating heat tab from drain pin to simplify PCB insulation layout.
- CoolMOS CFD2 superjunction technology with built-in fast recovery body diode, delivering soft switching behavior to reduce electromagnetic interference in high voltage converters.
- 650V VDS rating, 22.4A continuous drain current and low 150mΩ maximum on-resistance at 10V gate drive, minimizing conduction losses for medium-power offline topologies.
- Low total gate charge of 86nC and optimized device capacitances, balancing switching speed and power loss for flyback, PFC and resonant converter designs.
- TO-220FP isolated package with 34.7W total power dissipation rating, separating heat tab from drain pin to simplify PCB insulation layout.
FAQ
Q: What design precautions apply for IPA65R150CFD?
A: Add gate resistor to suppress switching oscillation, use adequate heat sink for thermal management, verify voltage derating for mains circuits and ensure proper creepage distance around high-voltage traces.
Q: What design precautions apply for IPA65R150CFD?
A: Add gate resistor to suppress switching oscillation, use adequate heat sink for thermal management, verify voltage derating for mains circuits and ensure proper creepage distance around high-voltage traces.
Alternative MOSFET Models
1. IPP65R150CFD: Standard TO-220 packaged 650V CoolMOS CFD2 MOSFET with identical electrical specs, suitable for layouts that do not require isolated TO-220FP packaging.
2. IPW65R150CFD: TO-247 high-power N-channel MOSFET with same Rds(on) rating, offering enhanced thermal performance for higher power offline converter designs.
3. IPA65R180CFD: TO-220FP 650V MOSFET with slightly higher on-resistance, a cost downgrade option for low-current power supply projects.
1. IPP65R150CFD: Standard TO-220 packaged 650V CoolMOS CFD2 MOSFET with identical electrical specs, suitable for layouts that do not require isolated TO-220FP packaging.
2. IPW65R150CFD: TO-247 high-power N-channel MOSFET with same Rds(on) rating, offering enhanced thermal performance for higher power offline converter designs.
3. IPA65R180CFD: TO-220FP 650V MOSFET with slightly higher on-resistance, a cost downgrade option for low-current power supply projects.
