Model No: FMMT493TA
Diodes Incorporated FMMT493TA
Manufacturer: Diodes Incorporated
SEMICON NO.: FMMT493TA
Package: SOT-23-3
Stock: In stock
Description: Bipolar BJT Transistor NPN 100V 1A
SEMICON NO.: FMMT493TA
Package: SOT-23-3
Stock: In stock
Description: Bipolar BJT Transistor NPN 100V 1A
Quantity :
| Mfr | Diodes Incorporated |
| Device Type | NPN Silicon Planar Medium Power Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 120 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Continuous Collector Current (IC) | 1 A |
| Power Dissipation (PD) | 500 mW |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-23-3 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
FMMT493TA Diodes Incorporated NPN Bipolar Transistor
FMMT493TA is a medium-power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated, supplied in standard SOT-23-3 surface-mount tape-and-reel packaging with 3000 units per reel, fully RoHS lead-free compliant, MSL 1 moisture rating and AEC-Q101 qualification from IATF 16949 certified production lines. This compact switching device features 100V collector-emitter breakdown voltage, 1A continuous collector current, 0.5W maximum power dissipation at 25°C ambient temperature, and a wide junction operating range of -55°C to +150°C. Marked “493” on the molded plastic body with UL94V-0 flame retardant housing, it balances high voltage tolerance, decent current capacity and 150MHz transition frequency for fast signal switching, suited for consumer, industrial and general automotive auxiliary circuit designs requiring small-form-factor power control components.
BJT Transistor Features
This NPN transistor delivers a minimum DC current gain hFE of 100 at 250mA collector current, with low VCE(sat) saturation voltage to minimize conduction power loss during heavy-current switching states. It supports 2A peak pulsed collector current and 200mA maximum base drive current, paired with ultra-low 100nA collector cutoff leakage current to prevent standby power drain in battery-powered equipment. The 150MHz gain bandwidth product enables high-speed pulse amplification and high-frequency signal driver tasks, while robust ESD protection stabilizes performance through PCB reflow soldering and field electrical transients. Matte tin-plated leads offer reliable solderability, the tiny SOT-23 footprint saves critical PCB real estate for dense multi-component boards, and consistent silicon process uniformity delivers tight parameter tolerances across mass production batches for uniform circuit behavior.
Alternative Power Transistors
● FMMT493QTA (Diodes): Fully automotive-grade AEC-Q101 variant with identical electrical specs and SOT-23 package for harsh vehicle environment drop-in replacement.
● MMBT493LT1G (onsemi): Pin-compatible SOT-23 NPN transistor matching 100V/1A ratings as cross-brand mass production substitute.
● KST493 (KEC): Cost-effective SOT-23 NPN BJT with equivalent voltage and current parameters for budget consumer hardware redesign projects.
FMMT493TA is a medium-power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated, supplied in standard SOT-23-3 surface-mount tape-and-reel packaging with 3000 units per reel, fully RoHS lead-free compliant, MSL 1 moisture rating and AEC-Q101 qualification from IATF 16949 certified production lines. This compact switching device features 100V collector-emitter breakdown voltage, 1A continuous collector current, 0.5W maximum power dissipation at 25°C ambient temperature, and a wide junction operating range of -55°C to +150°C. Marked “493” on the molded plastic body with UL94V-0 flame retardant housing, it balances high voltage tolerance, decent current capacity and 150MHz transition frequency for fast signal switching, suited for consumer, industrial and general automotive auxiliary circuit designs requiring small-form-factor power control components.
BJT Transistor Features
This NPN transistor delivers a minimum DC current gain hFE of 100 at 250mA collector current, with low VCE(sat) saturation voltage to minimize conduction power loss during heavy-current switching states. It supports 2A peak pulsed collector current and 200mA maximum base drive current, paired with ultra-low 100nA collector cutoff leakage current to prevent standby power drain in battery-powered equipment. The 150MHz gain bandwidth product enables high-speed pulse amplification and high-frequency signal driver tasks, while robust ESD protection stabilizes performance through PCB reflow soldering and field electrical transients. Matte tin-plated leads offer reliable solderability, the tiny SOT-23 footprint saves critical PCB real estate for dense multi-component boards, and consistent silicon process uniformity delivers tight parameter tolerances across mass production batches for uniform circuit behavior.
Alternative Power Transistors
● FMMT493QTA (Diodes): Fully automotive-grade AEC-Q101 variant with identical electrical specs and SOT-23 package for harsh vehicle environment drop-in replacement.
● MMBT493LT1G (onsemi): Pin-compatible SOT-23 NPN transistor matching 100V/1A ratings as cross-brand mass production substitute.
● KST493 (KEC): Cost-effective SOT-23 NPN BJT with equivalent voltage and current parameters for budget consumer hardware redesign projects.
