Model No: HMC1118LP3DETR
Analog Devices Inc. HMC1118LP3DETR
Manufacturer: Analog Devices Inc.
SEMICON NO.: HMC1118LP3DETR
Package: 16-LFCSP
Stock: In stock
Description: RF Switch IC VSAT SPDT 13GHz 50Ohm
SEMICON NO.: HMC1118LP3DETR
Package: 16-LFCSP
Stock: In stock
Description: RF Switch IC VSAT SPDT 13GHz 50Ohm
Quantity :
| Mfr | Analog Devices Inc. |
| Device Type | Nonreflective (Absorptive) Silicon SPDT RF Switch |
| Frequency Range | 9 kHz to 13 GHz |
| Topology | SPDT, Absorptive (Nonreflective) |
| Impedance | 50 Ω nominal |
| Insertion Loss (up to 8 GHz) | 0.68 dB typical |
| Isolation (up to 8 GHz) | > 48 dB |
| RF Power Handling (Through Path) | 35 dBm |
| RF Power Handling (Terminated Path) | 27 dBm |
| Supply Voltage | 3 V to 3.6 V (Nominal 3.3 V) |
| Optional Negative Supply | –2.5 V |
| Supply Current | 20 µA typical |
| Operating Temperature | –40°C to +85°C |
| Package | 16-LFCSP |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The HMC1118LP3DETR is a broadband nonreflective 50Ω SPDT RF switch manufactured by Analog Devices, packaged in 16-lead 3×3 mm LFCSP with exposed pad, supporting 9 kHz to 13 GHz frequency coverage, controlled by 0 V / +3.3 V logic and powered by +3.3 V and -2.5 V supplies, optimized for high-linearity signal routing with outstanding power handling and fast settling time for precision RF and microwave systems.
● Nonreflective absorptive topology prevents unwanted signal reflection when channels switch off, protecting upstream RF components;
● Low insertion loss of 0.68 dB and high isolation above 48 dB at 8 GHz to maintain clean signal quality;
● Excellent linearity with typical P1dB of 37 dBm and IIP3 of 62 dBm, suitable for high-power continuous and hot-switching operation;
● Fast 7.5 μs settling time at 0.05 dB accuracy, 2 kV HBM ESD rating, and operating temperature from -40 °C to +85 °C.
● Low insertion loss of 0.68 dB and high isolation above 48 dB at 8 GHz to maintain clean signal quality;
● Excellent linearity with typical P1dB of 37 dBm and IIP3 of 62 dBm, suitable for high-power continuous and hot-switching operation;
● Fast 7.5 μs settling time at 0.05 dB accuracy, 2 kV HBM ESD rating, and operating temperature from -40 °C to +85 °C.
This high-performance RF switch is widely deployed in test and measurement instruments, VSAT satellite terminals, microwave backhaul links, aerospace defense radio, radar and electronic countermeasure hardware, and broadband communication frontends where stable signal switching is required.
Alternative SPDT RF switch models
HMC1118LP3DE is the identical bare die version without tape-and-reel packaging for custom board assembly. HMC241A is a broadband SPDT RF switch offering comparable bandwidth with slightly lower power rating for cost-sensitive test setups. ADG904 is a silicon RF switch from ADI featuring simpler single-supply operation for moderate-frequency signal routing designs.
Sourcing note: Verify full part suffix for tape-and-reel packing, check original ADI markings, confirm ESD protection during shipment, and validate supply lead time since this high-frequency RF component faces periodic allocation risks.
HMC1118LP3DE is the identical bare die version without tape-and-reel packaging for custom board assembly. HMC241A is a broadband SPDT RF switch offering comparable bandwidth with slightly lower power rating for cost-sensitive test setups. ADG904 is a silicon RF switch from ADI featuring simpler single-supply operation for moderate-frequency signal routing designs.
Sourcing note: Verify full part suffix for tape-and-reel packing, check original ADI markings, confirm ESD protection during shipment, and validate supply lead time since this high-frequency RF component faces periodic allocation risks.
