Model No: PD55003-E
STMicroelectronics PD55003-E
Manufacturer: STMicroelectronics
SEMICON NO: PD55003-E
Package: 10-PowerSO
Stock: In stock
Description: RF Mosfet 500MHz 17dB
SEMICON NO: PD55003-E
Package: 10-PowerSO
Stock: In stock
Description: RF Mosfet 500MHz 17dB
Quantity :
| Manufacturer | STMicroelectronics |
| Part Number | PD55003-E |
| Frequency Range | 520 MHz to 860 MHz |
| Maximum Frequency | Up to 1 GHz |
| Power Gain (Gp) | 14 to 17 dB |
| Output Power | 34.77 dBm |
| Operating Voltage | 12 V |
| Mounting Type | Surface Mount |
| Temperature Range | -40°C to 125°C |
| Package | PowerSO-10RF |
ThePD55003-E is a high-performance RF power transistor manufactured by STMicroelectronics. It is an N-channel, enhancement-mode lateral field-effect transistor specifically designed for high gain and broadband applications. Operating at a voltage of 12.5V, this chip can handle frequencies up to 1 GHz, making it suitable for a wide range of commercial and industrial applications. Packaged in the PowerSO-10RF plastic package, the PD55003-E offers excellent thermal stability and reliability. It boasts a maximum output power of 3W with a gain of 17dB at 500 MHz.
Characteristics and Applications OF PD55003-E (RF power transistor)
The PD55003-E transistor chip features superior linearity performance, thanks to ST’s latest LDMOS technology. This makes it an ideal solution for applications requiring high linearity, such as car mobile radios. The PowerSO-10RF plastic package, which houses the PD55003-E, is designed for high reliability and is the first JEDEC-approved high-power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance, ease of assembly, and robust thermal stability. The chip's ability to operate at high frequencies and maintain high gain makes it suitable for various RF applications, including telecommunications, broadcasting, and radar systems.
Selection Advantages OF PD55003-E RF power transistor
Choosing the PD55003-E chip offers several advantages. Firstly, its high gain and linearity ensure superior performance in demanding applications such as car mobile radios. Secondly, the chip's packaging in the PowerSO-10RF, a first JEDEC-approved high-power SMD package, provides excellent reliability and ease of assembly. Additionally, the chip's excellent thermal stability allows it to operate in a wide range of temperatures, from -65°C to +150°C, making it suitable for harsh environments. Furthermore, STMicroelectronics' reputation for quality and reliability ensures that the PD55003-E chip meets the highest standards in the industry.
Characteristics and Applications OF PD55003-E (RF power transistor)
The PD55003-E transistor chip features superior linearity performance, thanks to ST’s latest LDMOS technology. This makes it an ideal solution for applications requiring high linearity, such as car mobile radios. The PowerSO-10RF plastic package, which houses the PD55003-E, is designed for high reliability and is the first JEDEC-approved high-power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance, ease of assembly, and robust thermal stability. The chip's ability to operate at high frequencies and maintain high gain makes it suitable for various RF applications, including telecommunications, broadcasting, and radar systems.
Selection Advantages OF PD55003-E RF power transistor
Choosing the PD55003-E chip offers several advantages. Firstly, its high gain and linearity ensure superior performance in demanding applications such as car mobile radios. Secondly, the chip's packaging in the PowerSO-10RF, a first JEDEC-approved high-power SMD package, provides excellent reliability and ease of assembly. Additionally, the chip's excellent thermal stability allows it to operate in a wide range of temperatures, from -65°C to +150°C, making it suitable for harsh environments. Furthermore, STMicroelectronics' reputation for quality and reliability ensures that the PD55003-E chip meets the highest standards in the industry.
