Model No: SI7461DP-T1-E3
Vishay Siliconix SI7461DP-T1-E3
Manufacturer: Vishay Siliconix
SEMICON NO.: SI7461DP-T1-E3
Package: SO-8
Stock: In stock
Description: Power MOSFET P-Channel 60 V
SEMICON NO.: SI7461DP-T1-E3
Package: SO-8
Stock: In stock
Description: Power MOSFET P-Channel 60 V
Quantity :
| Mfr | Vishay Siliconix |
| Device Type | P-Channel TrenchFET® Power MOSFET |
| Drain-Source Voltage | 60 V |
| Gate-Source Voltage | ±20 V |
| Continuous Drain Current | 8.6 A (Ta) / 14.4 A (Tc) |
| Power Dissipation | 1.9 W (Ta) / 5.4 W (Tc) |
| Turn-On Delay Time | 20 ns (Typ) |
| Turn-Off Delay Time | 205 ns (Typ) |
| Operating Temperature | -55°C to +150°C |
| Package | SO-8 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The SI7461DP-T1-E3 is a high-performance P-channel enhancement mode power MOSFET from Vishay Siliconix, housed in a standard 8-pin SO-8 surface-mount package. It features -60V drain-source voltage rating, -12.6A continuous drain current, and only 190mΩ maximum on-state resistance, supporting -55°C to +150°C wide operating temperature range, making it a robust, low-loss power switching solution for industrial power supplies, battery management systems, and high-density motor drive applications.
Key Features and Highlights
● 60V High Drain-Source Voltage Rating: 60V Vds breakdown voltage provides ample safety margin for 12V, 24V industrial power systems and 2S to 4S lithium battery pack applications, preventing device damage from voltage transients.
● 12.6A High Continuous Drain Current: 12.6A maximum continuous current handling capability supports high-power load switching, eliminating the need for parallel multiple MOSFETs in most medium-power power conversion designs.
● 190mΩ Ultra-Low On-State Resistance: Extremely low maximum Rds(on) drastically reduces conduction power loss and self-heating, improving system power efficiency and reducing thermal design requirements.
● Fast 20ns Rise Time Switching Performance: Ultra-fast 20ns typical rise time minimizes switching power loss, enabling high-efficiency operation in high-frequency DC-DC converter and synchronous rectification circuits.
Frequently Asked Questions (FAQ)
Q: What is the maximum continuous drain current rating of this P-channel MOSFET?
A: It features -12.6A maximum continuous drain current at 25°C case temperature, supporting high-current medium-power load switching applications.
● 60V High Drain-Source Voltage Rating: 60V Vds breakdown voltage provides ample safety margin for 12V, 24V industrial power systems and 2S to 4S lithium battery pack applications, preventing device damage from voltage transients.
● 12.6A High Continuous Drain Current: 12.6A maximum continuous current handling capability supports high-power load switching, eliminating the need for parallel multiple MOSFETs in most medium-power power conversion designs.
● 190mΩ Ultra-Low On-State Resistance: Extremely low maximum Rds(on) drastically reduces conduction power loss and self-heating, improving system power efficiency and reducing thermal design requirements.
● Fast 20ns Rise Time Switching Performance: Ultra-fast 20ns typical rise time minimizes switching power loss, enabling high-efficiency operation in high-frequency DC-DC converter and synchronous rectification circuits.
Frequently Asked Questions (FAQ)
Q: What is the maximum continuous drain current rating of this P-channel MOSFET?
A: It features -12.6A maximum continuous drain current at 25°C case temperature, supporting high-current medium-power load switching applications.
Compatible Alternative P-channel power MOSFET Part List
● SI7461DP-T1-GE3: The Vishay latest generation enhanced efficiency variant of the SI7461DP, offering even lower on-state resistance for higher power efficiency high-current switching scenarios.
● IRF9540N: An Infineon classic P-channel power MOSFET, serving as a fully pin-compatible cross-vendor second-source alternative with equivalent -60V voltage rating.
● SI7463DP-T1-E3: The lower Rds(on) higher current P-channel variant, featuring 110mΩ maximum on-resistance for higher current lower conduction loss power conversion system upgrades.
● AO4407: An Alpha & Omega low-cost P-channel power MOSFET, offering cost-optimized performance for high-volume consumer electronics power path protection designs.
● SI7461DP-T1-GE3: The Vishay latest generation enhanced efficiency variant of the SI7461DP, offering even lower on-state resistance for higher power efficiency high-current switching scenarios.
● IRF9540N: An Infineon classic P-channel power MOSFET, serving as a fully pin-compatible cross-vendor second-source alternative with equivalent -60V voltage rating.
● SI7463DP-T1-E3: The lower Rds(on) higher current P-channel variant, featuring 110mΩ maximum on-resistance for higher current lower conduction loss power conversion system upgrades.
● AO4407: An Alpha & Omega low-cost P-channel power MOSFET, offering cost-optimized performance for high-volume consumer electronics power path protection designs.
