Model No: SI1062X-T1-GE3
Vishay Siliconix SI1062X-T1-GE3
Manufacturer: Vishay Siliconix
SEMICON NO.: SI1062X-T1-GE3
Package: SC-89-3
Stock: In stock
Description: Power MOSFET 20 V 530mA (Ta) 220mW (Ta)
SEMICON NO.: SI1062X-T1-GE3
Package: SC-89-3
Stock: In stock
Description: Power MOSFET 20 V 530mA (Ta) 220mW (Ta)
Quantity :
| Mfr | Vishay Siliconix |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (VDSS) | 20 V |
| Continuous Drain Current (ID) @ 25°C | 530 mA |
| Pulsed Drain Current (IDM) | 2 A |
| Power Dissipation (PD) @ TA=25°C | 220 mW |
| Gate-Source Voltage (VGS) | ±8 V |
| Gate Charge (Qg) - Typ | 2.7 nC @ VGS = 8V |
| Input Capacitance (Ciss) - Typ | 43 pF @ VDS = 10V |
| Output Capacitance (Coss) - Typ | 14 pF |
| Reverse Transfer Capacitance (Crss) - Typ | 8 pF |
| Threshold Voltage (VGS(th)) - Min | 0.4 V |
| Operating Temperature | -55°C to +150°C |
| Package | SC-89-3 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
SI1062X-T1-GE3 power MOSFET N-channel TrenchFET
TheSI1062X-T1-GE3 is a high-performance N-channel TrenchFET® power MOSFET from Vishay Siliconix, engineered for efficient power switching in low-voltage portable and battery-operated applications. Housed in an ultra-compact 3-pin SC-89 (SOT-490) surface-mount package measuring 1.6mm × 0.8mm, this device features advanced trench technology that delivers exceptional on-state performance with 420mΩ maximum on-resistance at 4.5V gate drive. Operating from a 20V drain-source voltage rating with continuous drain current capability of 530mA (2A pulsed), it achieves low 2.7nC total gate charge and fast switching characteristics with 14ns rise time and 11ns fall time. The device incorporates 1000V ESD protection on the gate-source junction and maintains robust performance across the extended temperature range of -55°C to +150°C, making it ideal for load switches and power management in space-constrained portable electronics.
ESD protected MOSFET Applications
• Load and Power Switching: High-efficiency load switches in smartphones, tablets, and portable media players for battery management
• Driver Circuits: Relay, solenoid, lamp, and display drivers in battery-operated systems requiring compact power solutions
• Power Supply Converters: Synchronous rectification and DC/DC conversion in buck, boost, and charge pump circuits
• Memory and Logic Power: Power gating and voltage regulation for DRAM, SRAM, and digital logic circuits
• Battery-Operated Systems: Low-voltage power management in IoT devices, wearables, and wireless sensor nodes
• Portable Consumer Electronics: Audio amplifiers, LED drivers, and motor control in toys, gadgets, and handheld equipment
Alternative Compatible MOSFETs
1. SI1032X-T1-GE3: Lower voltage 12V variant with 1.2A current capability and 260mΩ RDS(on) for applications requiring higher current at reduced voltage stress.
2. SI3443CDV-T1-GE3: Higher current 3.6A P-channel TrenchFET with 64mΩ RDS(on) in SC-70-6 package for complementary high-side switching applications.
3. SI2302CDS-T1-GE3: Popular 2.5A 20V N-channel MOSFET in SOT-23-3 package offering higher current alternative with slightly larger footprint.
4. BSS138: ON Semiconductor's industry-standard 200mA 50V N-channel MOSFET in SOT-23 for cost-sensitive applications with relaxed performance requirements.
5. 2N7002: Fairchild's 300mA 60V N-channel MOSFET in SOT-23 providing higher voltage margin for industrial and automotive applications.
6.PMV65XP: Nexperia's 1.4A 20V N-channel MOSFET in TSOP-6 package with comparable specifications for supply chain diversification.
TheSI1062X-T1-GE3 is a high-performance N-channel TrenchFET® power MOSFET from Vishay Siliconix, engineered for efficient power switching in low-voltage portable and battery-operated applications. Housed in an ultra-compact 3-pin SC-89 (SOT-490) surface-mount package measuring 1.6mm × 0.8mm, this device features advanced trench technology that delivers exceptional on-state performance with 420mΩ maximum on-resistance at 4.5V gate drive. Operating from a 20V drain-source voltage rating with continuous drain current capability of 530mA (2A pulsed), it achieves low 2.7nC total gate charge and fast switching characteristics with 14ns rise time and 11ns fall time. The device incorporates 1000V ESD protection on the gate-source junction and maintains robust performance across the extended temperature range of -55°C to +150°C, making it ideal for load switches and power management in space-constrained portable electronics.
ESD protected MOSFET Applications
• Load and Power Switching: High-efficiency load switches in smartphones, tablets, and portable media players for battery management
• Driver Circuits: Relay, solenoid, lamp, and display drivers in battery-operated systems requiring compact power solutions
• Power Supply Converters: Synchronous rectification and DC/DC conversion in buck, boost, and charge pump circuits
• Memory and Logic Power: Power gating and voltage regulation for DRAM, SRAM, and digital logic circuits
• Battery-Operated Systems: Low-voltage power management in IoT devices, wearables, and wireless sensor nodes
• Portable Consumer Electronics: Audio amplifiers, LED drivers, and motor control in toys, gadgets, and handheld equipment
Alternative Compatible MOSFETs
1. SI1032X-T1-GE3: Lower voltage 12V variant with 1.2A current capability and 260mΩ RDS(on) for applications requiring higher current at reduced voltage stress.
2. SI3443CDV-T1-GE3: Higher current 3.6A P-channel TrenchFET with 64mΩ RDS(on) in SC-70-6 package for complementary high-side switching applications.
3. SI2302CDS-T1-GE3: Popular 2.5A 20V N-channel MOSFET in SOT-23-3 package offering higher current alternative with slightly larger footprint.
4. BSS138: ON Semiconductor's industry-standard 200mA 50V N-channel MOSFET in SOT-23 for cost-sensitive applications with relaxed performance requirements.
5. 2N7002: Fairchild's 300mA 60V N-channel MOSFET in SOT-23 providing higher voltage margin for industrial and automotive applications.
6.PMV65XP: Nexperia's 1.4A 20V N-channel MOSFET in TSOP-6 package with comparable specifications for supply chain diversification.
