Model No: UCC27211AQDDARQ1
Texas Instruments UCC27211AQDDARQ1
Manufacturer: Texas Instruments
SEMICON NO.: UCC27211AQDDARQ1
Package: 8-SO PowerPad
Stock: In stock
Description: Gate Driver Half-Bridge Non-Inverting 120V 4A
SEMICON NO.: UCC27211AQDDARQ1
Package: 8-SO PowerPad
Stock: In stock
Description: Gate Driver Half-Bridge Non-Inverting 120V 4A
Quantity :
| Mfr | Texas Instruments |
| Device Type | Half-Bridge Gate Driver IC |
| Driven Configuration | Half‑Bridge |
| Number of Drivers | 2 |
| Channel Type | Independent |
| Gate Type | N‑Channel MOSFET |
| Input Type | Non‑Inverting |
| Supply Voltage (VDD) | 8 V to 17 V |
| Input Voltage Tolerance | –10 V to +20 V |
| Peak Output Current | 4 A |
| Built‑in Bootstrap Diode | 120V rated on‑chip diode |
| Operating Temperature | –40°C to +150°C |
| Package | 8-SO PowerPad |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
UCC27211AQDDARQ1 120 V half-bridge gate driver
The UCC27211AQDDARQ1 is an AEC-Q100 Grade 1-qualified, 120 V half-bridge gate driver designed to drive two N-channel MOSFETs in high-side and low-side configurations for automotive DC/DC converters, onboard chargers, electric power steering, wireless charging, and motor drives. It operates from a VDD supply of 8 V to 17 V (20 V absolute maximum) and supports a bootstrap voltage up to 120 V, with 3.7 A peak source and 4.5 A peak sink current to minimize switching losses in large MOSFETs. Non-inverting TTL/CMOS-compatible inputs (HI, LI) accept signals from –10 V to +20 V independent of VDD, providing robust noise immunity and direct interface to controllers or gate-drive transformers without extra rectification diodes. The device offers fast propagation delays of 20 ns typical with 4 ns channel-to-channel matching, and rise/fall times of 7.2 ns/5.5 ns into 1000 pF, enabling high-frequency power conversion with tight timing control.
Alternative automotive gate drivers
1. Nexperia NGD4300DD-Q100J: AEC-Q100-qualified 120 V half-bridge gate driver with 4 A peak source and 5 A sink, integrated bootstrap diode, 1 ns delay matching, and 8 V to 17 V VDD, offered in SO8/HSO8 packages for automotive power stages.
2. onsemi NCP5106: High-voltage (up to 600 V) half-bridge gate driver with independent inputs, 250 mA/500 mA source/sink, 10–20 V supply, and dV/dt immunity of ±50 V/ns for robust non-automotive buck and bridge topologies.
3. Infineon IR2101: 600 V high- and low-side gate driver with 210 mA source and 360 mA sink, 10–20 V VDD, and non-inverting logic in 8-SOIC for general-purpose half-bridge and full-bridge converters.
The UCC27211AQDDARQ1 is an AEC-Q100 Grade 1-qualified, 120 V half-bridge gate driver designed to drive two N-channel MOSFETs in high-side and low-side configurations for automotive DC/DC converters, onboard chargers, electric power steering, wireless charging, and motor drives. It operates from a VDD supply of 8 V to 17 V (20 V absolute maximum) and supports a bootstrap voltage up to 120 V, with 3.7 A peak source and 4.5 A peak sink current to minimize switching losses in large MOSFETs. Non-inverting TTL/CMOS-compatible inputs (HI, LI) accept signals from –10 V to +20 V independent of VDD, providing robust noise immunity and direct interface to controllers or gate-drive transformers without extra rectification diodes. The device offers fast propagation delays of 20 ns typical with 4 ns channel-to-channel matching, and rise/fall times of 7.2 ns/5.5 ns into 1000 pF, enabling high-frequency power conversion with tight timing control.
Alternative automotive gate drivers
1. Nexperia NGD4300DD-Q100J: AEC-Q100-qualified 120 V half-bridge gate driver with 4 A peak source and 5 A sink, integrated bootstrap diode, 1 ns delay matching, and 8 V to 17 V VDD, offered in SO8/HSO8 packages for automotive power stages.
2. onsemi NCP5106: High-voltage (up to 600 V) half-bridge gate driver with independent inputs, 250 mA/500 mA source/sink, 10–20 V supply, and dV/dt immunity of ±50 V/ns for robust non-automotive buck and bridge topologies.
3. Infineon IR2101: 600 V high- and low-side gate driver with 210 mA source and 360 mA sink, 10–20 V VDD, and non-inverting logic in 8-SOIC for general-purpose half-bridge and full-bridge converters.
