Model No: CSD23202W10
Texas Instruments CSD23202W10
Manufacturer: Texas Instruments
SEMICON NO.: CSD23202W10
Package: 4-DSBGA
Stock: In stock
Description: IC NexFET power MOSFETs P-CH 12V 2.2A
SEMICON NO.: CSD23202W10
Package: 4-DSBGA
Stock: In stock
Description: IC NexFET power MOSFETs P-CH 12V 2.2A
Quantity :
| Mfr | Texas Instruments |
| Product Type | Dual N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 30V |
| Continuous Drain Current (I_D) | 100A(Single MOSFET) |
| R_DS(on) (Max) | 0.9mΩ(V_GS = 10V) |
| Power Dissipation | 3.1W |
| Gate Charge (Q_g) | 60nC |
| Input Capacitance (C_iss) | 3000pF |
| Operating Temperature | -55 to +150 °C |
| Package / Case | 4-DSBGA |
| Key Features | - Ultra-Low R_DS(on) - Fast Switching - AEC-Q101 Qualified |
CSD23202W10 P-Channel MOSFET NexFET™ Power MOSFET
The CSD23202W10 is a 12-V P-Channel NexFET™ Power MOSFET designed for high-efficiency switching applications. Manufactured by Texas Instruments, this Power MOSFET device features a maximum drain-source on-resistance (RDS(on)) of 53 mΩ at a gate-source voltage (VGS) of -4.5 V. It is housed in a compact 1 mm x 1 mm WLP (wafer-level package) with 4 pins, making it suitable for space-constrained designs. The CSD23202W10 also includes gate ESD protection, enhancing its robustness in various operating conditions.
CSD23202W10 Features
The CSD23202W10 boasts ultra-low gate charge (Qg) and gate-drain charge (Qgd), which contribute to high switching efficiency and reduced power loss. Its small form factor and low profile (0.62 mm height) make it ideal for applications requiring minimal board space. Additionally, the device operates over a wide temperature range of -55°C to 150°C, ensuring reliability in harsh environments. The CSD23202W10 also features a maximum continuous drain current (Id) of 2.2 A and a peak drain current of 25 A, providing robust performance for demanding applications.
CSD23202W10 Applications
- Battery Management: Efficient switching for battery protection and management systems.
- Load Switching: Ideal for load switching in power supplies and consumer electronics.
- Power Distribution: Used in power distribution systems for low-loss switching.
- Motor Control: Provides high-efficiency switching for motor control applications.
- Portable Devices: Suitable for portable devices where space and power efficiency are critical.
Why choosing CSD23202W10
When selecting the CSD23202W10, designers benefit from its ultra-low gate charge and on-resistance, which minimize switching losses and improve overall system efficiency. The compact 1 mm x 1 mm WLP package allows for integration into space-constrained designs without compromising performance. The device's wide operating temperature range and robust ESD protection ensure reliability in various operating conditions. Additionally, the CSD23202W10's high continuous and peak drain currents make it suitable for applications requiring high power handling capabilities.
Similar IC Chips
Similar to the CSD23202W10, the CSD23202W10T is a variant with similar electrical characteristics and packaging options. Other alternatives in the NexFET™ family include devices with different voltage and current ratings, such as the CSD18502KCS, which offers a higher voltage rating and similar low RDS(on) characteristics. These alternatives can be considered based on specific application requirements such as voltage, current, and package size.
The CSD23202W10 is a 12-V P-Channel NexFET™ Power MOSFET designed for high-efficiency switching applications. Manufactured by Texas Instruments, this Power MOSFET device features a maximum drain-source on-resistance (RDS(on)) of 53 mΩ at a gate-source voltage (VGS) of -4.5 V. It is housed in a compact 1 mm x 1 mm WLP (wafer-level package) with 4 pins, making it suitable for space-constrained designs. The CSD23202W10 also includes gate ESD protection, enhancing its robustness in various operating conditions.
CSD23202W10 Features
The CSD23202W10 boasts ultra-low gate charge (Qg) and gate-drain charge (Qgd), which contribute to high switching efficiency and reduced power loss. Its small form factor and low profile (0.62 mm height) make it ideal for applications requiring minimal board space. Additionally, the device operates over a wide temperature range of -55°C to 150°C, ensuring reliability in harsh environments. The CSD23202W10 also features a maximum continuous drain current (Id) of 2.2 A and a peak drain current of 25 A, providing robust performance for demanding applications.
CSD23202W10 Applications
- Battery Management: Efficient switching for battery protection and management systems.
- Load Switching: Ideal for load switching in power supplies and consumer electronics.
- Power Distribution: Used in power distribution systems for low-loss switching.
- Motor Control: Provides high-efficiency switching for motor control applications.
- Portable Devices: Suitable for portable devices where space and power efficiency are critical.
Why choosing CSD23202W10
When selecting the CSD23202W10, designers benefit from its ultra-low gate charge and on-resistance, which minimize switching losses and improve overall system efficiency. The compact 1 mm x 1 mm WLP package allows for integration into space-constrained designs without compromising performance. The device's wide operating temperature range and robust ESD protection ensure reliability in various operating conditions. Additionally, the CSD23202W10's high continuous and peak drain currents make it suitable for applications requiring high power handling capabilities.
Similar IC Chips
Similar to the CSD23202W10, the CSD23202W10T is a variant with similar electrical characteristics and packaging options. Other alternatives in the NexFET™ family include devices with different voltage and current ratings, such as the CSD18502KCS, which offers a higher voltage rating and similar low RDS(on) characteristics. These alternatives can be considered based on specific application requirements such as voltage, current, and package size.
