Model No: STP55NF06L
STMicroelectronics STP55NF06L
Manufacturer: STMicroelectronics
SEMICON NO.: STP55NF06L
Package: TO-220
Stock: In stock
Description: N-Channel Power MOSFET 60 V 55 A 95W
SEMICON NO.: STP55NF06L
Package: TO-220
Stock: In stock
Description: N-Channel Power MOSFET 60 V 55 A 95W
Quantity :
| Mfr | STMicroelectronics |
| Drain-to-Source Voltage (VDSS) | 60 V |
| Continuous Drain Current (ID) | 55 A @ TC = 25°C |
| Pulsed Drain Current (IDM) | 220 A |
| Drain-to-Source On-Resistance (RDS(on)) | 19 mΩ (Max) @ VGS = 10 V |
| Gate-to-Source Voltage (VGS) | ±20 V (Max) |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V |
| Total Gate Charge (Qg) | 55 nC (Typical) @ VDS = 48 V, ID = 55 A |
| Input Capacitance (Ciss) | 1550 pF (Typical) |
| Avalanche Energy Rating (EAS) | Single Pulse: 360 mJ (Typical) |
| Diode Forward Voltage (VSD) | 1.1 V (Typical) @ IS = 55 A |
| Reverse Recovery Time (trr) | 75 ns (Typical) |
| Power Dissipation (PD) | 90 W @ TC = 25°C |
| Operating Temperature | -55°C to +175°C |
| Package | TO-220 |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
STP55NF06L N-Channel Power MOSFET
The STP55NF06L is an N-channel power MOSFET from STMicroelectronics, designed for high-efficiency switching and linear amplification applications. This device utilizes ST's advanced STripFET™ process technology, delivering low on-state resistance and fast switching performance. With a drain-source voltage rating of 60V and continuous drain current capability of 55A, it is well-suited for automotive, industrial, and consumer applications requiring robust power handling. The MOSFET features low gate charge and high avalanche ruggedness, making it ideal for motor drives, power supplies, and load switching circuits where efficiency and reliability are paramount. Its TO-220 package provides excellent thermal performance for high-power applications.
This power MOSFET offers an extremely low on-state resistance (Rds(on)) of 0.02 ohm maximum at 10V gate drive, minimizing conduction losses in high-current applications. It features a low gate threshold voltage (2-4V) compatible with standard logic levels, and a total gate charge of 75nC typical for efficient switching. The device demonstrates strong avalanche energy capability and a high di/dt tolerance, ensuring robustness under inductive load conditions. Housed in a TO-220FP package (insulated version available as STP55NF06FP), it provides a low thermal resistance of 1°C/W junction-to-case. The MOSFET is characterized for operation over the full industrial temperature range of -55°C to 175°C.
AlternativeMOSFET Models
● Infineon IPP60R04CP: A 60V, 60A power MOSFET featuring low gate charge and optimized switching performance for similar applications
● ON Semiconductor FDP55N06: A 60V, 55A MOSFET with low on-resistance and fast switching capability, suitable for power conversion circuits
● Vishay SIHP55N06E: A 60V, 55A power MOSFET offering low Rds(on) and high avalanche energy specification for robust performance
The STP55NF06L is an N-channel power MOSFET from STMicroelectronics, designed for high-efficiency switching and linear amplification applications. This device utilizes ST's advanced STripFET™ process technology, delivering low on-state resistance and fast switching performance. With a drain-source voltage rating of 60V and continuous drain current capability of 55A, it is well-suited for automotive, industrial, and consumer applications requiring robust power handling. The MOSFET features low gate charge and high avalanche ruggedness, making it ideal for motor drives, power supplies, and load switching circuits where efficiency and reliability are paramount. Its TO-220 package provides excellent thermal performance for high-power applications.
This power MOSFET offers an extremely low on-state resistance (Rds(on)) of 0.02 ohm maximum at 10V gate drive, minimizing conduction losses in high-current applications. It features a low gate threshold voltage (2-4V) compatible with standard logic levels, and a total gate charge of 75nC typical for efficient switching. The device demonstrates strong avalanche energy capability and a high di/dt tolerance, ensuring robustness under inductive load conditions. Housed in a TO-220FP package (insulated version available as STP55NF06FP), it provides a low thermal resistance of 1°C/W junction-to-case. The MOSFET is characterized for operation over the full industrial temperature range of -55°C to 175°C.
AlternativeMOSFET Models
● Infineon IPP60R04CP: A 60V, 60A power MOSFET featuring low gate charge and optimized switching performance for similar applications
● ON Semiconductor FDP55N06: A 60V, 55A MOSFET with low on-resistance and fast switching capability, suitable for power conversion circuits
● Vishay SIHP55N06E: A 60V, 55A power MOSFET offering low Rds(on) and high avalanche energy specification for robust performance
