Model No: STGF10M65DF2
STMicroelectronics STGF10M65DF2
Manufacturer: STMicroelectronics
SEMICON NO.: STGF10M65DF2
Package: TO-220FP
Stock: In stock
Description: IGBT Trench Field Stop 650V 20A 30W
SEMICON NO.: STGF10M65DF2
Package: TO-220FP
Stock: In stock
Description: IGBT Trench Field Stop 650V 20A 30W
Quantity :
| Mfr | STMicroelectronics |
| Device Type | Trench Gate Field-Stop IGBT (M Series) |
| Collector-Emitter Voltage | 650 V |
| Continuous Collector Current | 20 A @ 25°C |
| Pulsed Collector Current | 40 A |
| Gate-Emitter Voltage | ±20 V |
| Power Dissipation | 30 W @ 25°C |
| Collector-Emitter Saturation Voltage | 1.55 V (Typ), 15 V (Max) |
| Gate Threshold Voltage | 5 V @ 250 µA |
| Gate Charge | 28 nC |
| Input Capacitance | 840 pF |
| Output Capacitance | 63 pF |
| Reverse Transfer Capacitance | 16 pF |
| Operating Temperature | -55°C to +175°C |
| Package | TO-220FP |
| Mounting Type | Through Hole |
| Compliance | RoHS Compliant |
The STGF10M65DF2 is a high-performance 650V 10A trench gate field-stop M-series IGBT from STMicroelectronics, housed in a compact D²PAK surface-mount package. It features 6µs guaranteed short-circuit withstand time, 1.55V typical VCE(sat) at 10A, positive VCE(sat) temperature coefficient, integrated soft fast-recovery antiparallel diode, and 175°C maximum junction temperature, making it a low-loss, high-reliability power switching solution for motor drives, UPS systems, PFC circuits, and general-purpose low-to-medium power inverter applications.
Key Features and Highlights
● 6µs Guaranteed Short-Circuit Withstand Time: Industry-standard 6µs minimum short-circuit withstand capability drastically improves system fault tolerance, preventing catastrophic device failure during unexpected power rail short-circuit events.
● 1.55V Ultra-Low Typical VCE(sat) at 10A: Extremely low saturation voltage minimizes conduction power loss, significantly improving overall inverter system energy efficiency and reducing unnecessary heat generation under full-load operating conditions.
● Positive VCE(sat) Temperature Coefficient: Natural positive temperature coefficient characteristic eliminates current hogging risk during parallel operation, enabling safe and reliable multi-device current sharing for higher-power power stage expansion scenarios.
● Integrated Soft Fast-Recovery Antiparallel Diode: Built-in ultra-soft fast recovery freewheeling diode eliminates external discrete diode requirement, drastically reducing BOM count and PCB layout complexity for half-bridge and full-bridge inverter topologies.
Frequently Asked Questions (FAQ)
Q: What is the maximum continuous collector current rating of this IGBT?
A: It features 10A maximum continuous collector current at 25°C case temperature, fully meeting the power switching requirements of most low-to-medium power inverter systems.
Compatible Alternative IGBT Part List
1. FGW40N60HD: An ON Semiconductor 600V 40A field-stop IGBT, serving as a fully pin-compatible cross-vendor second-source alternative with comparable low-loss and short-circuit withstand performance.
2. STGF20M65DF2: The higher-current 20A enhanced M-series IGBT variant, delivering 20A maximum continuous collector current for higher-power inverter system performance upgrades.
3. IRGB10B60KD: An Infineon 600V 10A field-stop IGBT, featuring ultra-low switching loss for cost-sensitive high-volume low-power motor drive inverter designs.
Key Features and Highlights
● 6µs Guaranteed Short-Circuit Withstand Time: Industry-standard 6µs minimum short-circuit withstand capability drastically improves system fault tolerance, preventing catastrophic device failure during unexpected power rail short-circuit events.
● 1.55V Ultra-Low Typical VCE(sat) at 10A: Extremely low saturation voltage minimizes conduction power loss, significantly improving overall inverter system energy efficiency and reducing unnecessary heat generation under full-load operating conditions.
● Positive VCE(sat) Temperature Coefficient: Natural positive temperature coefficient characteristic eliminates current hogging risk during parallel operation, enabling safe and reliable multi-device current sharing for higher-power power stage expansion scenarios.
● Integrated Soft Fast-Recovery Antiparallel Diode: Built-in ultra-soft fast recovery freewheeling diode eliminates external discrete diode requirement, drastically reducing BOM count and PCB layout complexity for half-bridge and full-bridge inverter topologies.
Frequently Asked Questions (FAQ)
Q: What is the maximum continuous collector current rating of this IGBT?
A: It features 10A maximum continuous collector current at 25°C case temperature, fully meeting the power switching requirements of most low-to-medium power inverter systems.
Compatible Alternative IGBT Part List
1. FGW40N60HD: An ON Semiconductor 600V 40A field-stop IGBT, serving as a fully pin-compatible cross-vendor second-source alternative with comparable low-loss and short-circuit withstand performance.
2. STGF20M65DF2: The higher-current 20A enhanced M-series IGBT variant, delivering 20A maximum continuous collector current for higher-power inverter system performance upgrades.
3. IRGB10B60KD: An Infineon 600V 10A field-stop IGBT, featuring ultra-low switching loss for cost-sensitive high-volume low-power motor drive inverter designs.
