Model No: STFW4N150
STMicroelectronics STFW4N150
Manufacturer: STMicroelectronics
SEMICON NO.: STFW4N150
Package: TO-3PF
Stock: In stock
Description: MOSFET N Channel 1500V 4A 63W
SEMICON NO.: STFW4N150
Package: TO-3PF
Stock: In stock
Description: MOSFET N Channel 1500V 4A 63W
Quantity :
| Mfr | STMicroelectronics |
| Device Type | N-Channel Power MOSFET |
| Technology | MESH OVERLAY™ process |
| Drain-Source Voltage | 1500 V |
| Continuous Drain Current | 4 A (Tc) |
| Power Dissipation | 63 W (Tc) |
| Gate-Source Voltage | ±30 V |
| Drain-Source On-Resistance | 7 Ω (Max), 5 Ω (Typ) |
| Gate Threshold Voltage | 5 V (Max), 3 V (Typ) |
| Gate Charge | 50 nC (Max) |
| Input Capacitance | 1300 pF (Max) |
| Output Capacitance | 120 pF (Typ) |
| Operating Temperature | -55°C to +150°C |
| Package | TO-3PF |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The STFW4N150 is a high-voltage N-channel PowerMESH power MOSFET from STMicroelectronics, featuring a 1500 V drain-source breakdown voltage, 4 A continuous drain current, and 6 Ohm typical on-resistance, packaged in a fully isolated TO-3PF through-hole housing with 63 W power dissipation capability. Manufactured using ST's well-consolidated MESH OVERLAY process with proprietary edge termination structure, this device delivers the lowest RDS(on) per area, minimized gate charge, and exceptional switching characteristics, with 100% avalanche testing ensuring rugged reliability in demanding high-voltage switching applications from -55°C to +150°C operation.
Applications
The STFW4N150 is primarily designed for high-voltage switching applications in industrial and consumer power electronics. Typical deployments include switch-mode power supplies (SMPS) operating from rectified mains, power factor correction (PFC) boost stages in offline converters, high-voltage DC-DC converters, lighting ballasts and HID lamp drivers, induction heating equipment, welding inverters, motor drive circuits, X-ray generators, plasma display drivers, and general-purpose high-voltage switching where rugged avalanche capability and efficient thermal performance are essential.
The STFW4N150 is primarily designed for high-voltage switching applications in industrial and consumer power electronics. Typical deployments include switch-mode power supplies (SMPS) operating from rectified mains, power factor correction (PFC) boost stages in offline converters, high-voltage DC-DC converters, lighting ballasts and HID lamp drivers, induction heating equipment, welding inverters, motor drive circuits, X-ray generators, plasma display drivers, and general-purpose high-voltage switching where rugged avalanche capability and efficient thermal performance are essential.
Frequently Asked Questions
Q1: What is the avalanche energy capability?
The device withstands 350 mJ single-pulse avalanche energy (EAS) starting at Tj = 25°C with ID = IAR and VDD = 50 V, with 100% production testing ensuring reliability.
Q2: What thermal performance does the TO-3PF package provide?
The TO-3PF package exhibits 3.12°C/W maximum junction-to-case thermal resistance, enabling efficient heat extraction with proper heat sink design for continuous 63 W dissipation at TC = 25°C.
Q1: What is the avalanche energy capability?
The device withstands 350 mJ single-pulse avalanche energy (EAS) starting at Tj = 25°C with ID = IAR and VDD = 50 V, with 100% production testing ensuring reliability.
Q2: What thermal performance does the TO-3PF package provide?
The TO-3PF package exhibits 3.12°C/W maximum junction-to-case thermal resistance, enabling efficient heat extraction with proper heat sink design for continuous 63 W dissipation at TC = 25°C.
Alternative MOSFET Models
● STP4N150: Same die in standard non-isolated TO-220 package with 160 W power dissipation for conventional through-hole designs.
● STFV4N150: Fully isolated TO-220FH package variant with >4 mm creepage distance for compact designs requiring isolation in smaller footprint.
● IXTJ4N150 (IXYS): 1500 V MOSFET in TO-3P package providing equivalent 4 A current rating with proven high-voltage reliability.
● STW9N150: Higher-current 1500 V PowerMESH upgrade in TO-247 with 8 A rating and 1.8 Ohm typical RDS(on) for designs requiring greater current capacity.
● STP4N150: Same die in standard non-isolated TO-220 package with 160 W power dissipation for conventional through-hole designs.
● STFV4N150: Fully isolated TO-220FH package variant with >4 mm creepage distance for compact designs requiring isolation in smaller footprint.
● IXTJ4N150 (IXYS): 1500 V MOSFET in TO-3P package providing equivalent 4 A current rating with proven high-voltage reliability.
● STW9N150: Higher-current 1500 V PowerMESH upgrade in TO-247 with 8 A rating and 1.8 Ohm typical RDS(on) for designs requiring greater current capacity.
