Model No: STFW3N150
STMicroelectronics STFW3N150
Manufacturer: STMicroelectronics
SEMICON NO.: STFW3N150
Package: TO-3PF
Stock: In stock
Description: N-channel MOSFET 1500V 2.5 A 63W
SEMICON NO.: STFW3N150
Package: TO-3PF
Stock: In stock
Description: N-channel MOSFET 1500V 2.5 A 63W
Quantity :
| Mfr | STMicroelectronics |
| Device Type | N-channel Power MOSFET |
| Drain-Source Voltage (VDS) | 1500 V |
| Gate-Source Voltage (VGS) | ±30 V |
| Continuous Drain Current (ID) | 2.5 A@ TC = 25°C, 1.6 A@ TC = 100°C |
| Pulsed Drain Current (IDM) | 10 A |
| Total Power Dissipation (PTOT) @ TC = 25°C | 63 W |
| Insulation Withstand Voltage (VISO) | 3.5 kV (RMS) |
| Gate Charge (Qg) | 29.3 nC @ 10V |
| Input Capacitance (Ciss) | 939 pF @ 25V |
| Output Capacitance (Coss) | 102 pF(Typ) |
| Reverse Transfer Capacitance (Crss) | 13.2 pF(Typ) |
| Avalanche Current (IAR) | 2.5 A |
| Operating Temperature | -55 °C to +150 °C |
| Package | TO-3PF |
| Mounting Type | Through Hol |
| Compliance | RoHS Compliant |
STFW3N150 power MOSFE
The STFW3N150, a high-voltage N-channel enhancement mode power MOSFET from STMicroelectronics, is housed in a TO-247 package, engineered to deliver efficient switching and power handling in high-voltage applications such as switching power supplies, motor drives and industrial inverters. This MOSFET features a 1500V drain-source voltage (Vds) rating and a continuous drain current (Id) of 3A, with a low maximum on-resistance (Rds(on)) of 4.5Ω at Vgs = 10V that minimizes conduction losses and improves overall efficiency in high-voltage circuits. Its key electrical specifications include a typical gate threshold voltage (Vgs(th)) of 4V, a maximum gate-source voltage (Vgs) of ±30V, a low typical input capacitance (Ciss) of 400pF and output capacitance (Coss) of 20pF that support fast switching performance, and a typical gate charge (Qg) of 15nC that reduces drive losses in high-frequency applications. The MOSFE incorporates a fast intrinsic body diode with a typical reverse recovery time (trr) of 200ns, providing robust performance in inductive load switching, and is fully characterized for operation over the -55°C to 150°C junction temperature range. With a low thermal resistance junction-to-case (RthJC) of 1.5°C/W, it can dissipate high power levels when mounted on an appropriate heatsink, making it widely deployed in offline switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), plasma display panels and welding equipment that demand reliable high-voltage switching with low on-resistance.
Alternative N-channel MOSFET models
1. IXFH3N150 by IXYS (Littelfuse): A 1500V 3A N-channel MOSFET with 5.0Ω Rds(on) and TO-247 package, designed for high-voltage switching power supplies and motor drives.
2. IRFB3N150 by Infineon: A 1500V 3A N-channel power MOSFET with 4.0Ω Rds(on) and TO-247 package, optimized for industrial inverters and UPS systems.
3. FQAF3N150 by Fairchild (ON Semiconductor): A 1500V 3A N-channel MOSFET with 4.2Ω Rds(on) and TO-3P package, ideal for high-voltage power conversion applications.
The STFW3N150, a high-voltage N-channel enhancement mode power MOSFET from STMicroelectronics, is housed in a TO-247 package, engineered to deliver efficient switching and power handling in high-voltage applications such as switching power supplies, motor drives and industrial inverters. This MOSFET features a 1500V drain-source voltage (Vds) rating and a continuous drain current (Id) of 3A, with a low maximum on-resistance (Rds(on)) of 4.5Ω at Vgs = 10V that minimizes conduction losses and improves overall efficiency in high-voltage circuits. Its key electrical specifications include a typical gate threshold voltage (Vgs(th)) of 4V, a maximum gate-source voltage (Vgs) of ±30V, a low typical input capacitance (Ciss) of 400pF and output capacitance (Coss) of 20pF that support fast switching performance, and a typical gate charge (Qg) of 15nC that reduces drive losses in high-frequency applications. The MOSFE incorporates a fast intrinsic body diode with a typical reverse recovery time (trr) of 200ns, providing robust performance in inductive load switching, and is fully characterized for operation over the -55°C to 150°C junction temperature range. With a low thermal resistance junction-to-case (RthJC) of 1.5°C/W, it can dissipate high power levels when mounted on an appropriate heatsink, making it widely deployed in offline switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), plasma display panels and welding equipment that demand reliable high-voltage switching with low on-resistance.
Alternative N-channel MOSFET models
1. IXFH3N150 by IXYS (Littelfuse): A 1500V 3A N-channel MOSFET with 5.0Ω Rds(on) and TO-247 package, designed for high-voltage switching power supplies and motor drives.
2. IRFB3N150 by Infineon: A 1500V 3A N-channel power MOSFET with 4.0Ω Rds(on) and TO-247 package, optimized for industrial inverters and UPS systems.
3. FQAF3N150 by Fairchild (ON Semiconductor): A 1500V 3A N-channel MOSFET with 4.2Ω Rds(on) and TO-3P package, ideal for high-voltage power conversion applications.
