Model No: SBAW56LT1G
onsemi SBAW56LT1G
Manufacturer: onsemi
SEMICON NO.: SBAW56LT1G
Package: SOT-23
Stock: In stock
Description: Diode Array 70V 200MA SOT-23-3
SEMICON NO.: SBAW56LT1G
Package: SOT-23
Stock: In stock
Description: Diode Array 70V 200MA SOT-23-3
Quantity :
| Mfr | onsemi |
| Product Type | Schottky Barrier Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 40 V |
| Average Rectified Forward Current (IF(AV)) | 200mA (DC) |
| Forward Voltage (VF) | 450 mV (Max) @ 10 mA |
| Reverse Leakage Current (IR) | 200 nA (Max) @ 25°C 10 µA (Max) @ 25 V, 125°C |
| Junction Capacitance (Cj) | 1.4 pF (Typ) @ 0 V, 1 MHz |
| Reverse Recovery Time (trr) | < 4 ns (Typical) |
| Power Dissipation (PD) | 150 mW |
| Operating Temperature | -65 °C to +125 °C |
| Package | SOT-23 |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
SBAW56LT1G Switching Diode
The SBAW56LT1G is a high-performance Schottky barrier diode (SBD) designed for ultra-low forward voltage drop and high-frequency switching applications. Manufactured using advanced silicon technology, this chip combines efficiency and reliability, making it ideal for power management, RF circuits, and high-speed data communication systems. With a low leakage current and robust ESD protection, the SBAW56LT1G delivers consistent performance in demanding environments, including automotive, industrial, and consumer electronics.
Key Features & Benefits
● Ultra-Low Forward Voltage Drop: Reduces conduction losses, improving energy efficiency in power supplies and DC-DC converters.
● High-Frequency Operation: Fast recovery time (trr < 5ns) enables use in switching-mode power supplies (SMPS) and RF circuits.
● Robust ESD Protection: Withstands electrostatic discharge events, enhancing durability in handling-sensitive applications.
AlternativeSchottky Diode Models
● ON Semiconductor MBR0540T1G: A 40V, 0.5A Schottky diode with low Vf, ideal for low-power rectification in consumer devices.
● Vishay BSS84-16: A 16V, 0.1A Schottky diode optimized for high-speed switching in RF and telecom applications.
● Infineon BAT54S: A dual 30V, 0.2A Schottky diode in a compact SOT-23 package, suitable for battery-powered circuits.
● Diodes Incorporated BAT54C: A 30V, 0.2A Schottky diode with low leakage, targeting portable electronics and wearables.
● Rohm RB751S40T1L: A 40V, 1A Schottky diode with fast recovery, ideal for automotive and industrial power supplies.
The SBAW56LT1G is a high-performance Schottky barrier diode (SBD) designed for ultra-low forward voltage drop and high-frequency switching applications. Manufactured using advanced silicon technology, this chip combines efficiency and reliability, making it ideal for power management, RF circuits, and high-speed data communication systems. With a low leakage current and robust ESD protection, the SBAW56LT1G delivers consistent performance in demanding environments, including automotive, industrial, and consumer electronics.
Key Features & Benefits
● Ultra-Low Forward Voltage Drop: Reduces conduction losses, improving energy efficiency in power supplies and DC-DC converters.
● High-Frequency Operation: Fast recovery time (trr < 5ns) enables use in switching-mode power supplies (SMPS) and RF circuits.
● Robust ESD Protection: Withstands electrostatic discharge events, enhancing durability in handling-sensitive applications.
AlternativeSchottky Diode Models
● ON Semiconductor MBR0540T1G: A 40V, 0.5A Schottky diode with low Vf, ideal for low-power rectification in consumer devices.
● Vishay BSS84-16: A 16V, 0.1A Schottky diode optimized for high-speed switching in RF and telecom applications.
● Infineon BAT54S: A dual 30V, 0.2A Schottky diode in a compact SOT-23 package, suitable for battery-powered circuits.
● Diodes Incorporated BAT54C: A 30V, 0.2A Schottky diode with low leakage, targeting portable electronics and wearables.
● Rohm RB751S40T1L: A 40V, 1A Schottky diode with fast recovery, ideal for automotive and industrial power supplies.
