Model No: NTMFS5C670NLT1G
onsemi NTMFS5C670NLT1G
Manufacturer: onsemi
SEMICON NO.: NTMFS5C670NLT1G
Package: 5-DFN
Stock: In stock
Description: N-Channel MOSFET 60V 5DFN
SEMICON NO.: NTMFS5C670NLT1G
Package: 5-DFN
Stock: In stock
Description: N-Channel MOSFET 60V 5DFN
Quantity :
| Mfr | onsemi |
| Technology | TrenchFET® Gen IV |
| Drain-Source Voltage | 30 V |
| Continuous Drain Current | 5.6 A |
| Drain-Source On-Resistance | 10.3 mΩ (Max) |
| Gate Threshold Voltage | 1.0 V to 2.0 V |
| Total Gate Charge | 8.4 nC (Typ) |
| Input Capacitance | 520 pF (Typ) |
| Power Dissipation | 1.7 W (Max) |
| Operating Temperature | -55°C to +175°C |
| Package | 5-DFN |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
NTMFS5C670NLT1G N-Channel MOSFET
The NTMFS5C670NLT1G is a high-performance, N-channel MOSFET designed for applications requiring high current handling and low on-resistance in a compact package. Manufactured by onsemi, this device features advanced performance characteristics, making it suitable for a wide range of industrial, automotive, and consumer electronics applications.
NTMFS5C670NLT1G N-Ch MOSFET Technical Specifications
The NTMFS5C670NLT1G offers several key features and specifications. It supports a maximum drain-source voltage (Vdss) of 60V, ensuring compatibility with various power supply platforms. The device features a continuous drain current (Id) of up to 71A and a low on-resistance (Rds(on)) of 6.1mΩ at 10V and 35A. It includes a gate-source voltage (Vgs) range of -20V to +20V and a gate charge (Qg) of 20nC at 10V. The MOSFET operates within an extended temperature range of -55°C to +175°C, making it suitable for harsh environments.
The NTMFS5C670NLT1G is designed for high efficiency and low power consumption. It features a low thermal resistance and low gate charge, reducing driving losses. The device includes a negative thermal coefficient, reducing output current at higher temperatures to prolong LED lifetime. Additionally, it supports easy paralleling of devices to increase current, providing scalability for larger applications.
AlternativesMOSFET Models
● VBQA1606: A domestic alternative from VBsemi, offering a higher continuous current of 80A and a lower on-resistance of 7mΩ at 4.5V drive.
● RS6L120BGTB1: A similar MOSFET from Rohm Semiconductor, suitable for applications requiring high current handling.
● VBK2298: A performance-enhanced drop-in option with a higher voltage margin and lower conduction loss.
The NTMFS5C670NLT1G is a high-performance, N-channel MOSFET designed for applications requiring high current handling and low on-resistance in a compact package. Manufactured by onsemi, this device features advanced performance characteristics, making it suitable for a wide range of industrial, automotive, and consumer electronics applications.
NTMFS5C670NLT1G N-Ch MOSFET Technical Specifications
The NTMFS5C670NLT1G offers several key features and specifications. It supports a maximum drain-source voltage (Vdss) of 60V, ensuring compatibility with various power supply platforms. The device features a continuous drain current (Id) of up to 71A and a low on-resistance (Rds(on)) of 6.1mΩ at 10V and 35A. It includes a gate-source voltage (Vgs) range of -20V to +20V and a gate charge (Qg) of 20nC at 10V. The MOSFET operates within an extended temperature range of -55°C to +175°C, making it suitable for harsh environments.
The NTMFS5C670NLT1G is designed for high efficiency and low power consumption. It features a low thermal resistance and low gate charge, reducing driving losses. The device includes a negative thermal coefficient, reducing output current at higher temperatures to prolong LED lifetime. Additionally, it supports easy paralleling of devices to increase current, providing scalability for larger applications.
AlternativesMOSFET Models
● VBQA1606: A domestic alternative from VBsemi, offering a higher continuous current of 80A and a lower on-resistance of 7mΩ at 4.5V drive.
● RS6L120BGTB1: A similar MOSFET from Rohm Semiconductor, suitable for applications requiring high current handling.
● VBK2298: A performance-enhanced drop-in option with a higher voltage margin and lower conduction loss.
