Model No: NTMFS5C430NLT1G
onsemi NTMFS5C430NLT1G
Manufacturer: onsemi
SEMICON NO.: NTMFS5C430NLT1G
Package: 5-DFN
Stock: In stock
Description: N-Channel 40V 200A (Tc) 3.8W (Ta), 110W (Tc)
SEMICON NO.: NTMFS5C430NLT1G
Package: 5-DFN
Stock: In stock
Description: N-Channel 40V 200A (Tc) 3.8W (Ta), 110W (Tc)
Quantity :
| Mfr | onsemi |
| Device Type | N-Channel Power MOSFET |
| Drain-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) @ 25°C | 200 A (Tc) |
| Power Dissipation (Pd) | 3.8W (Ta), 110W (Tc) |
| Drain-Source On-Resistance (Rds(on)) | 1.4 mΩ (typ) / 1.5 mΩ (max) @ 10V, 50A |
| Gate-Source Threshold Voltage (Vgs(th)) | 1.2V to 2V @ 250µA |
| Gate Charge (Qg) (Typ) | 70 nC @ 10V / 32 nC @ 4.5V |
| Input Capacitance (Ciss) (Typ) | 4300 pF @ 20V / 4942 pF |
| Reverse Transfer Capacitance (Crss) | 144 pF @ 20V |
| Maximum Gate-Source Voltage (Vgs) | ±20 V |
| Operating Temperature (TJ) | -55°C to +175°C |
| Package | 5-DFN |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
NTMFS5C430NLT1G 40V N-Channel Power MOSFET
The NTMFS5C430NLT1G is a high-performance N-channel enhancement-mode power MOSFET from onsemi (ON Semiconductor), engineered for high-current, low-loss power switching applications. Built with advanced trench-gate technology, it features a 40V drain-source voltage rating, ultra-low typical on-resistance of 1.4mΩ at VGS=10V, and supports up to 185A continuous drain current, minimizing conduction losses and boosting system efficiency. Designed for compact high-density layouts, it integrates a robust body diode for inductive load handling and offers low gate charge to reduce driver power consumption.
NTMFS5C430NLT1G N-Channel MOSFET Application Scenarios
● High-Efficiency DC-DC Converters: Used in server POL modules, industrial power supplies, and battery chargers to minimize conduction and switching losses.
● Motor Drive Systems: Drives brushed/BLDC motors and solenoids in automotive, robotics, and industrial automation equipment.
● Power Distribution & Load Switching: Enables high-current load switching in battery management systems and power distribution boards.
● Synchronous Rectification: Applied in secondary-side synchronous rectifier circuits for high-power AC-DC adapters and inverters.
Alternativepower MOSFETModels
1. TI CSD18540Q5B: 40V N-channel MOSFET in 5x6mm DFN, 1.6mΩ on-resistance, pin-compatible alternative with similar high-current performance.
2. Infineon BSC014N04LSI: 40V MOSFET with 1.4mΩ RDS(on), thermally enhanced DFN package, low-gate-charge substitute for high-frequency designs.
3. Vishay SiJ620BDP: 40V N-channel power MOSFET, 1.5mΩ on-resistance, compact DFN alternative with robust avalanche capability.
4. onsemi NVMFS5C430NL: Direct variant with identical electrical specs, optimized for higher thermal performance in industrial applications.
The NTMFS5C430NLT1G is a high-performance N-channel enhancement-mode power MOSFET from onsemi (ON Semiconductor), engineered for high-current, low-loss power switching applications. Built with advanced trench-gate technology, it features a 40V drain-source voltage rating, ultra-low typical on-resistance of 1.4mΩ at VGS=10V, and supports up to 185A continuous drain current, minimizing conduction losses and boosting system efficiency. Designed for compact high-density layouts, it integrates a robust body diode for inductive load handling and offers low gate charge to reduce driver power consumption.
NTMFS5C430NLT1G N-Channel MOSFET Application Scenarios
● High-Efficiency DC-DC Converters: Used in server POL modules, industrial power supplies, and battery chargers to minimize conduction and switching losses.
● Motor Drive Systems: Drives brushed/BLDC motors and solenoids in automotive, robotics, and industrial automation equipment.
● Power Distribution & Load Switching: Enables high-current load switching in battery management systems and power distribution boards.
● Synchronous Rectification: Applied in secondary-side synchronous rectifier circuits for high-power AC-DC adapters and inverters.
Alternativepower MOSFETModels
1. TI CSD18540Q5B: 40V N-channel MOSFET in 5x6mm DFN, 1.6mΩ on-resistance, pin-compatible alternative with similar high-current performance.
2. Infineon BSC014N04LSI: 40V MOSFET with 1.4mΩ RDS(on), thermally enhanced DFN package, low-gate-charge substitute for high-frequency designs.
3. Vishay SiJ620BDP: 40V N-channel power MOSFET, 1.5mΩ on-resistance, compact DFN alternative with robust avalanche capability.
4. onsemi NVMFS5C430NL: Direct variant with identical electrical specs, optimized for higher thermal performance in industrial applications.
