Model No: NSVBCP53-16T3G
onsemi NSVBCP53-16T3G
Manufacturer: onsemi
SEMICON NO.: NSVBCP53-16T3G
Package: SOT-223
Stock: In stock
Description: TRANS PNP 80V 1.5A 50MHz
SEMICON NO.: NSVBCP53-16T3G
Package: SOT-223
Stock: In stock
Description: TRANS PNP 80V 1.5A 50MHz
Quantity :
| Mfr | onsemi |
| Device Type | Bipolar Junction Transistor (BJT) - PNP |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Continuous Collector Current (Ic) | 1.5 A |
| Power Dissipation (Pd) | 1.5 W |
| Transition Frequency (fT) | 50 MHz |
| Operating Temperature | -65°C to +150°C |
| Package | SOT-223 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
NSVBCP53-16T3G GP PNP Transistors PNP Transistor
The NSVBCP53-16T3G is a high-performance PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications requiring robust voltage handling and current capability. This device features a maximum collector-emitter voltage (VCEO) of -80V and a continuous collector current (IC) rating of -1.5A, making it suitable for medium-power circuits.
Key electrical characteristics include a low collector-emitter saturation voltage (VCE(sat)) of typically -0.5V at 500mA, a minimum DC current gain (hFE) of 100 at 150mA, and a transition frequency (fT) of 50MHz, ensuring efficient operation in both linear and saturated switching regimes. The device is specified for a wide junction temperature range from -65°C to +150°C, is RoHS3 compliant, and features a Moisture Sensitivity Level (MSL) of 1, indicating unlimited floor life.
AlternativeBJT TransistorModels
● BCP53-16T3G (onsemi): The standard commercial-grade variant of the same part, offering identical electrical specifications but without the automotive-grade qualification and extended traceability.
● FMMT558TA (Diodes Incorporated): A PNP transistor with similar 80V VCEO and 1.5A IC rating in a SOT-23 package, suitable for space-constrained designs with lower power dissipation needs.
● MMBT5580LT1G (onsemi): A small-signal PNP transistor with 80V VCEO but lower current rating (200mA) in a SOT-23 package, ideal for signal-level switching where high power is not required.
● PBSS5540T,215 (Nexperia): A PNP low VCE(sat) transistor with 60V VCEO and 4A peak current, offering higher current density in a SOT-223 package for demanding switching applications.
The NSVBCP53-16T3G is a high-performance PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications requiring robust voltage handling and current capability. This device features a maximum collector-emitter voltage (VCEO) of -80V and a continuous collector current (IC) rating of -1.5A, making it suitable for medium-power circuits.
Key electrical characteristics include a low collector-emitter saturation voltage (VCE(sat)) of typically -0.5V at 500mA, a minimum DC current gain (hFE) of 100 at 150mA, and a transition frequency (fT) of 50MHz, ensuring efficient operation in both linear and saturated switching regimes. The device is specified for a wide junction temperature range from -65°C to +150°C, is RoHS3 compliant, and features a Moisture Sensitivity Level (MSL) of 1, indicating unlimited floor life.
AlternativeBJT TransistorModels
● BCP53-16T3G (onsemi): The standard commercial-grade variant of the same part, offering identical electrical specifications but without the automotive-grade qualification and extended traceability.
● FMMT558TA (Diodes Incorporated): A PNP transistor with similar 80V VCEO and 1.5A IC rating in a SOT-23 package, suitable for space-constrained designs with lower power dissipation needs.
● MMBT5580LT1G (onsemi): A small-signal PNP transistor with 80V VCEO but lower current rating (200mA) in a SOT-23 package, ideal for signal-level switching where high power is not required.
● PBSS5540T,215 (Nexperia): A PNP low VCE(sat) transistor with 60V VCEO and 4A peak current, offering higher current density in a SOT-223 package for demanding switching applications.
