Model No: NSR02100HT1G
onsemi NSR02100HT1G
Manufacturer: onsemi
SEMICON NO.: NSR02100HT1G
Package: SOD-323
Stock: In stock
Description: Diode 100 V 200mA Surface Mount
SEMICON NO.: NSR02100HT1G
Package: SOD-323
Stock: In stock
Description: Diode 100 V 200mA Surface Mount
Quantity :
| Mfr | onsemi |
| Device Type | Small Signal Schottky Barrier Diode / Rectifier Diode |
| Rectifier Type | Low Leakage |
| Diode Configuration | Single |
| Repetitive Peak Reverse Voltage | 100 V |
| Average Forward Current | 200 mA (DC) |
| Non-Repetitive Peak Forward Surge Current | 2 A |
| Power Dissipation | 200 mW |
| Forward Voltage Drop | 950 mV(Max) |
| Reverse Current | 150 nA (Max) |
| Total Capacitance) | 4 pF (Typ) |
| Operating Temperature | -55°C to +150°C |
| Package | SOD-323 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
NSR02100HT1G 100V Ultra-Fast Recovery Schottky Rectifier
NSR02100HT1G is a surface-mount 100V low VF Schottky barrier rectifier produced by ON Semiconductor, encapsulated in miniature SOD-123 plastic package and delivered on tape-and-reel, fully RoHS compliant with halogen-free construction and MSL1 moisture rating for seamless automated SMT assembly. It features a 200mA continuous forward current rating, reverse breakdown voltage of 100V, and operates reliably across industrial temperature range from -55°C to +150°C junction temperature, engineered with optimized Schottky wafer technology to deliver far faster switching speeds than standard PN junction fast recovery diodes. The compact flat SOD-123 outline occupies minimal PCB area for dense portable, adapter and small power conversion circuits, with tight manufacturing tolerances ensuring consistent forward voltage and leakage performance across mass production batches.
Schottky Barrier Diode Features
This Schottky diode provides typical forward voltage drop of only 0.85V at rated 200mA forward current, drastically cutting conduction power loss during steady-state forward operation, paired with negligible reverse recovery charge to eliminate switching spikes and EMI noise in high-frequency DC-DC converters. Low reverse leakage current maintains minimal standby power draw at rated reverse bias, while the package structure offers adequate thermal dissipation for continuous full-load operation without auxiliary heat sinks. The component withstands repetitive peak forward surge currents and exhibits robust avalanche capability against transient voltage spikes, supports high switching frequencies well above MHz range, and matches standard SOD-123 footprint dimensions for straightforward layout compatibility with industry-standard surface-mount rectifiers. No external snubber circuits are required in most low-power high-frequency loop designs thanks to its inherent fast switching characteristic.
Alternative Rectifier Diodes
● NSR02100MWT1G (ON Semiconductor): Identical electrical rating Schottky rectifier in smaller SOD-323 package for ultra-space-restricted PCB layouts.
● BAT85 (NXP): 100V 200mA SOD-123 Schottky diode with matching footprint as direct cross-brand drop-in replacement for cost-sensitive assembly.
● SS210 (Taiwan Semiconductor): Higher-current 100V Schottky rectifier for upgraded load capacity in higher-power miniature converter designs.
NSR02100HT1G is a surface-mount 100V low VF Schottky barrier rectifier produced by ON Semiconductor, encapsulated in miniature SOD-123 plastic package and delivered on tape-and-reel, fully RoHS compliant with halogen-free construction and MSL1 moisture rating for seamless automated SMT assembly. It features a 200mA continuous forward current rating, reverse breakdown voltage of 100V, and operates reliably across industrial temperature range from -55°C to +150°C junction temperature, engineered with optimized Schottky wafer technology to deliver far faster switching speeds than standard PN junction fast recovery diodes. The compact flat SOD-123 outline occupies minimal PCB area for dense portable, adapter and small power conversion circuits, with tight manufacturing tolerances ensuring consistent forward voltage and leakage performance across mass production batches.
Schottky Barrier Diode Features
This Schottky diode provides typical forward voltage drop of only 0.85V at rated 200mA forward current, drastically cutting conduction power loss during steady-state forward operation, paired with negligible reverse recovery charge to eliminate switching spikes and EMI noise in high-frequency DC-DC converters. Low reverse leakage current maintains minimal standby power draw at rated reverse bias, while the package structure offers adequate thermal dissipation for continuous full-load operation without auxiliary heat sinks. The component withstands repetitive peak forward surge currents and exhibits robust avalanche capability against transient voltage spikes, supports high switching frequencies well above MHz range, and matches standard SOD-123 footprint dimensions for straightforward layout compatibility with industry-standard surface-mount rectifiers. No external snubber circuits are required in most low-power high-frequency loop designs thanks to its inherent fast switching characteristic.
Alternative Rectifier Diodes
● NSR02100MWT1G (ON Semiconductor): Identical electrical rating Schottky rectifier in smaller SOD-323 package for ultra-space-restricted PCB layouts.
● BAT85 (NXP): 100V 200mA SOD-123 Schottky diode with matching footprint as direct cross-brand drop-in replacement for cost-sensitive assembly.
● SS210 (Taiwan Semiconductor): Higher-current 100V Schottky rectifier for upgraded load capacity in higher-power miniature converter designs.
