Model No: NRVB1H100SFT3G
onsemi NRVB1H100SFT3G
Manufacturer: onsemi
SEMICON NO.: NRVB1H100SFT3G
Package: SOD-123FL
Stock: In stock
Description: Schottky Barrier Power Rectifier
SEMICON NO.: NRVB1H100SFT3G
Package: SOD-123FL
Stock: In stock
Description: Schottky Barrier Power Rectifier
Quantity :
| Mfr | onsemi |
| Product Series | NRVB (Automotive Grade) |
| Device Type | Schottky Barrier Power Rectifier |
| Peak Repetitive Reverse Voltage (Vrrm) / DC Blocking Voltage (Vr) | 100 V |
| Average Rectified Forward Current (Io) | 1.0 A (at TL = 162°C) |
| Non-Repetitive Peak Surge Current (Ifsm) | 50 A (60 Hz, Half-wave) |
| Forward Voltage Drop (Vf) @ 1A (Max) | 760 mV @ 25°C, 610 mV @ 125°C |
| Reverse Current (Ir) @ Rated Vr (Max) | 40 µA @ 25°C, 0.5 mA @ 125°C |
| Speed / Recovery Time | Fast Recovery (< 500 ns) |
| Operating Temperature | -65°C to +175°C |
| Package | SOD-123FL |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
NRVB1H100SFT3G Schottky power rectifier
The NRVB1H100SFT3G is an automotive-grade surface mount Schottky power rectifier from ON Semiconductor, delivering 1.0A average rectified forward current with 100V peak repetitive reverse voltage in a compact SOD-123FL package. This high-performance diode utilizes the Schottky Barrier principle with a large-area metal-to-silicon junction, providing exceptionally low forward voltage drop of just 0.76V at 1A and 25°C, reducing to 0.61V at elevated temperatures. The device operates across an extreme temperature range from -65°C to +175°C junction temperature, making it suitable for harsh automotive and industrial environments.
NRVB1H100SFT3G rectifier Performance
This Schottky rectifier offers superior switching performance with fast recovery characteristics and low reverse leakage current of only 40μA at 100V reverse voltage and 25°C. The device can withstand non-repetitive peak surge currents up to 50A under half-wave, single-phase 60Hz conditions, providing robust protection against transient overloads. Thermal performance is optimized with junction-to-lead thermal resistance of 23°C/W when mounted on 700mm² copper pad area, enabling efficient heat dissipation for continuous 1A operation at lead temperatures up to 162°C.
AlternativeSchottky diodeParts
● MBR1H100SFT3G: ON Semiconductor's standard commercial-grade variant with identical electrical specifications and SOD-123FL package, suitable for non-automotive applications without AEC-Q101 qualification requirements .
● DFLS1100-7: Diodes Incorporated's 100V 1A Schottky rectifier in PowerDI-123 package offering similar electrical performance as a drop-in alternative for general-purpose rectification .
● SS110: Vishay's surface mount Schottky barrier rectifier featuring 100V/1A ratings in SMA package for applications requiring different footprint compatibility .
● STPS1H100A: STMicroelectronics' 100V 1A Schottky diode offering equivalent automotive-grade reliability and electrical characteristics for supply chain diversification.
The NRVB1H100SFT3G is an automotive-grade surface mount Schottky power rectifier from ON Semiconductor, delivering 1.0A average rectified forward current with 100V peak repetitive reverse voltage in a compact SOD-123FL package. This high-performance diode utilizes the Schottky Barrier principle with a large-area metal-to-silicon junction, providing exceptionally low forward voltage drop of just 0.76V at 1A and 25°C, reducing to 0.61V at elevated temperatures. The device operates across an extreme temperature range from -65°C to +175°C junction temperature, making it suitable for harsh automotive and industrial environments.
NRVB1H100SFT3G rectifier Performance
This Schottky rectifier offers superior switching performance with fast recovery characteristics and low reverse leakage current of only 40μA at 100V reverse voltage and 25°C. The device can withstand non-repetitive peak surge currents up to 50A under half-wave, single-phase 60Hz conditions, providing robust protection against transient overloads. Thermal performance is optimized with junction-to-lead thermal resistance of 23°C/W when mounted on 700mm² copper pad area, enabling efficient heat dissipation for continuous 1A operation at lead temperatures up to 162°C.
AlternativeSchottky diodeParts
● MBR1H100SFT3G: ON Semiconductor's standard commercial-grade variant with identical electrical specifications and SOD-123FL package, suitable for non-automotive applications without AEC-Q101 qualification requirements .
● DFLS1100-7: Diodes Incorporated's 100V 1A Schottky rectifier in PowerDI-123 package offering similar electrical performance as a drop-in alternative for general-purpose rectification .
● SS110: Vishay's surface mount Schottky barrier rectifier featuring 100V/1A ratings in SMA package for applications requiring different footprint compatibility .
● STPS1H100A: STMicroelectronics' 100V 1A Schottky diode offering equivalent automotive-grade reliability and electrical characteristics for supply chain diversification.
