Model No: MMBFJ310LT1G
onsemi MMBFJ310LT1G
Manufacturer: onsemi
SEMICON NO.: MMBFJ310LT1G
Package: SOT-23-3
Stock: In stock
Description: RF Mosfet JFET 10V SOT23-3
SEMICON NO.: MMBFJ310LT1G
Package: SOT-23-3
Stock: In stock
Description: RF Mosfet JFET 10V SOT23-3
Quantity :
| Mfr | onsemi |
| Product Category | RF JFET |
| Technology | JFET |
| Configuration | Single, N-Channel |
| Drain-Source Voltage (Vdss) | 25 V |
| Continuous Drain Current (Id) | 24 mA to 60 mA |
| Power Dissipation (Pd) | 225 mW |
| Voltage-Test | 10 V |
| Current-Test | 10 mA |
| Gain | 12 dB |
| Maximum Feedback Capacitance (Crss) | 2.5 pF |
| Operating Junction Temperature (Tj) | Up to 150 °C |
| Package | SOT-23-3 |
| Compliance | RoHS Compliant |
MMBFJ310LT1G RF Mosfet 10V 10mA
The MMBFJ310LT1G is a high-performance N-channel depletion mode JFET (Junction Field-Effect Transistor) from ON Semiconductor, designed for use in a variety of analog and RF applications. This device offers high input impedance, low noise, and excellent linearity, making it suitable for precision signal processing and high-frequency applications.
Features and Applications
The MMBFJ310LT1G features a maximum drain-source voltage (VDS) of 25V and a maximum drain current (ID) of 1A. It has a low gate-source threshold voltage (VGS) of 5V max at 0V drain-source voltage, ensuring reliable operation in low-power applications. The device also offers a maximum power dissipation of 225 mW, making it suitable for compact designs. It is housed in a compact SOT-23 package, which is ideal for surface-mount applications and provides excellent thermal performance.
The MMBFJ310LT1G is widely used in applications requiring high input impedance and low noise. These include precision analog circuits, where its high input impedance and low noise characteristics ensure accurate signal processing. It is also used in RF applications, such as low-noise amplifiers and RF mixers, where its excellent linearity and high-frequency performance are crucial. Additionally, the device is suitable for use in voltage-controlled oscillators (VCOs) and other high-frequency signal processing circuits.
Alternative N-Channel Depletion Mode JFET Models
● NXP's BFW10: A high-performance N-channel depletion mode JFET with similar characteristics, suitable for precision analog and RF applications.
● Infineon's BF245: An N-channel depletion mode JFET with a maximum drain-source voltage of 25V, offering high input impedance and low noise, ideal for analog signal processing.
● STMicroelectronics' J310: A compact N-channel depletion mode JFET in a SOT-23 package, providing high performance for a variety of analog and RF applications.
● Vishay's J310: A high-performance JFET with excellent linearity and low noise, suitable for precision signal processing and high-frequency applications.
The MMBFJ310LT1G is a high-performance N-channel depletion mode JFET (Junction Field-Effect Transistor) from ON Semiconductor, designed for use in a variety of analog and RF applications. This device offers high input impedance, low noise, and excellent linearity, making it suitable for precision signal processing and high-frequency applications.
Features and Applications
The MMBFJ310LT1G features a maximum drain-source voltage (VDS) of 25V and a maximum drain current (ID) of 1A. It has a low gate-source threshold voltage (VGS) of 5V max at 0V drain-source voltage, ensuring reliable operation in low-power applications. The device also offers a maximum power dissipation of 225 mW, making it suitable for compact designs. It is housed in a compact SOT-23 package, which is ideal for surface-mount applications and provides excellent thermal performance.
The MMBFJ310LT1G is widely used in applications requiring high input impedance and low noise. These include precision analog circuits, where its high input impedance and low noise characteristics ensure accurate signal processing. It is also used in RF applications, such as low-noise amplifiers and RF mixers, where its excellent linearity and high-frequency performance are crucial. Additionally, the device is suitable for use in voltage-controlled oscillators (VCOs) and other high-frequency signal processing circuits.
Alternative N-Channel Depletion Mode JFET Models
● NXP's BFW10: A high-performance N-channel depletion mode JFET with similar characteristics, suitable for precision analog and RF applications.
● Infineon's BF245: An N-channel depletion mode JFET with a maximum drain-source voltage of 25V, offering high input impedance and low noise, ideal for analog signal processing.
● STMicroelectronics' J310: A compact N-channel depletion mode JFET in a SOT-23 package, providing high performance for a variety of analog and RF applications.
● Vishay's J310: A high-performance JFET with excellent linearity and low noise, suitable for precision signal processing and high-frequency applications.
