Model No: FDB024N08BL7
onsemi FDB024N08BL7
Manufacturer: onsemi
SEMICON NO.: FDB024N08BL7
Package: TO-263-7
Stock: In stock
Description: N-Channel MOSFET 80 V 120A 246 W
SEMICON NO.: FDB024N08BL7
Package: TO-263-7
Stock: In stock
Description: N-Channel MOSFET 80 V 120A 246 W
Quantity :
| Mfr | onsemi |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 80 V |
| Gate-Source Voltage | ±20 V |
| Power Dissipation | 246 W |
| Input Capacitance | 13530 pF |
| Operating Temperature | -55°C to +175°C |
| Package | TO-263-7 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
FDB024N08BL7 onsemi PowerTrench N-Channel Power MOSFET D2PAK-7L
FDB024N08BL7 is a high-current enhancement-mode N-channel power MOSFET built with onsemi's advanced PowerTrench trench silicon process, supplied in 7-pin D2PAK-7L surface-mount tape-and-reel packaging with full RoHS3 compliance and JEDEC reliability certification for automated high-volume SMT assembly. This power transistor features an 80V drain-source breakdown voltage, theoretical peak continuous drain current of 229A and package-limited 120A steady current at 25°C case temperature, maximum power dissipation rated at 246W, and a wide junction operating temperature range spanning -55°C to +175°C. Optimized to balance ultra-low on-resistance and fast switching performance, it targets high-efficiency synchronous rectification and heavy-load power switching without excessive thermal buildup, suited for server, industrial and mobility power hardware relying on high-current DC regulation architectures.
It serves as the primary switching and rectification FET for high-power ATX server/desktop PC power supplies, telecom rack DC-DC converters, electric bike motor drive inverters, large-capacity battery discharge protection modules, uninterruptible power supply (UPS) power stages, heavy-duty industrial pump/fan controllers, and high-current battery charger synchronous rectifier branches, delivering high efficiency thermal-stable performance for high-amperage 12V–48V power conversion systems where low loss and reliable high-current handling are critical design priorities.
Alternative N-channel MOSFET Models
● FDB024N08B (onsemi): Bare D2PAK-7L die without tape reel formatting, electrically identical for direct pin-to-pin inventory drop-in replacement.
● IRL40SC228 (Infineon): 80V low Rds(on) N-channel D2PAK MOSFET with matching high-current rating as cross-brand synchronous rectifier substitute for power supply redesigns.
● AOT240L (Alpha & Omega): Cost-effective 80V power trench FET in equivalent TO-263-7 package for budget mass-production power conversion hardware.
FDB024N08BL7 is a high-current enhancement-mode N-channel power MOSFET built with onsemi's advanced PowerTrench trench silicon process, supplied in 7-pin D2PAK-7L surface-mount tape-and-reel packaging with full RoHS3 compliance and JEDEC reliability certification for automated high-volume SMT assembly. This power transistor features an 80V drain-source breakdown voltage, theoretical peak continuous drain current of 229A and package-limited 120A steady current at 25°C case temperature, maximum power dissipation rated at 246W, and a wide junction operating temperature range spanning -55°C to +175°C. Optimized to balance ultra-low on-resistance and fast switching performance, it targets high-efficiency synchronous rectification and heavy-load power switching without excessive thermal buildup, suited for server, industrial and mobility power hardware relying on high-current DC regulation architectures.
It serves as the primary switching and rectification FET for high-power ATX server/desktop PC power supplies, telecom rack DC-DC converters, electric bike motor drive inverters, large-capacity battery discharge protection modules, uninterruptible power supply (UPS) power stages, heavy-duty industrial pump/fan controllers, and high-current battery charger synchronous rectifier branches, delivering high efficiency thermal-stable performance for high-amperage 12V–48V power conversion systems where low loss and reliable high-current handling are critical design priorities.
Alternative N-channel MOSFET Models
● FDB024N08B (onsemi): Bare D2PAK-7L die without tape reel formatting, electrically identical for direct pin-to-pin inventory drop-in replacement.
● IRL40SC228 (Infineon): 80V low Rds(on) N-channel D2PAK MOSFET with matching high-current rating as cross-brand synchronous rectifier substitute for power supply redesigns.
● AOT240L (Alpha & Omega): Cost-effective 80V power trench FET in equivalent TO-263-7 package for budget mass-production power conversion hardware.
