Model No: RB751S40
Nexperia USA Inc. RB751S40
Manufacturer: Nexperia USA Inc.
SEMICON NO.: RB751S40
Package: SOD-523 (SC-79)
Stock: In stock
Description: Schottky Diode Single 40V 30mA
SEMICON NO.: RB751S40
Package: SOD-523 (SC-79)
Stock: In stock
Description: Schottky Diode Single 40V 30mA
Quantity :
| Mfr | Nexperia USA Inc. |
| Device Type | Planar Schottky Barrier Diode (Single) |
| Repetitive Peak Reverse Voltage (Max) | 40 V |
| Average Rectified Forward Current (Max) | 30 mA (DC) |
| Non-Repetitive Peak Forward Surge Current (Max) | 200 mA |
| Power Dissipation (Max) | 0.28 W |
| Forward Voltage (Max) | 370 mV @ 1 mA |
| Reverse Leakage Current (Max) | 500 nA @ 30 V |
| Operating Temperature | –55°C to +125°C |
| Package | SOD-523 (SC-79) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
RB751S40 Ultra-Small 30V/30mA Schottky Barrier Diode in SOD-523
The RB751S40 is a silicon epitaxial planar Schottky barrier diode featuring an integrated guard ring for stress protection, housed in an ultra-small, flat-lead SOD-523 (SC-79 / EMD2) surface-mount package measuring just 1.6 x 0.8 x 0.7 mm. It delivers a 40 V peak reverse voltage (30 V DC), 30 mA average rectified forward current, and an extremely low 370 mV maximum forward voltage at 1 mA, making it a benchmark small-signal Schottky for space-constrained portable electronics.
Applications
The RB751S40 is engineered for ultra-high-speed switching, voltage clamping, line termination, reverse-polarity protection, and low-current rectification in space-constrained electronics. Typical deployments include smartphones and tablets, portable media devices, wearables and wireless earbuds, USB and battery-charging circuits, DC-DC converter bootstrap and freewheeling stages, signal-line clamping and ESD-sensitive interfaces, and general low-current rectification in consumer, computing, and industrial control boards where the SOD-523 footprint and low VF extend battery life and save board space.
Frequently Asked Questions
Q1: Is the RB751S40 still in production? The original ROHM RB751S-40TE61 is in Last-Time-Buy (EOL) status, but onsemi and Nexperia continue to supply functionally identical second sources (RB751S40T1G and RB751S40,115), and ROHM recommends the RB751SM-40T2R as its direct replacement.
Q2: How does the RB751S40 differ from the BAT54 series? The RB751S40 offers lower forward voltage (370 mV vs. ~320-400 mV for BAT54) in a smaller SOD-523 package with 30 mA rating, whereas the BAT54 (SOD-323/SOD-123) provides higher 200-300 mA current capability in a larger footprint.
Alternative / Replacement Schottky barrier diode Models
● RB751S40T1G — onsemi's active Pb-free second source in SOD-523 with identical 30 V/30 mA ratings, stocked in volume (12,721 units at DigiKey) for seamless production continuity.
● RB751S40T5G — onsemi's alternate tape-and-reel variant of the same silicon, providing a drop-in option when T1G supply is constrained.
● RB751S40,115 (Nexperia) — Nexperia's version of the same planar Schottky with guard ring in SOD-523, delivering the same 40 V/30 mA performance under IEC-60134 qualification.
● PMEG4002EJ,115 — Nexperia's 40 V, 100 mA small-signal Schottky in SOD-323FL for designs needing higher current margin than the 30 mA RB751S40.
● BAT54 (ST / Vishay / Nexperia) — Industry-standard 30-40 V, 200-300 mA general-purpose Schottky in SOD-323/SOD-123, offering greater current capability in a slightly larger footprint.
The RB751S40 is a silicon epitaxial planar Schottky barrier diode featuring an integrated guard ring for stress protection, housed in an ultra-small, flat-lead SOD-523 (SC-79 / EMD2) surface-mount package measuring just 1.6 x 0.8 x 0.7 mm. It delivers a 40 V peak reverse voltage (30 V DC), 30 mA average rectified forward current, and an extremely low 370 mV maximum forward voltage at 1 mA, making it a benchmark small-signal Schottky for space-constrained portable electronics.
Applications
The RB751S40 is engineered for ultra-high-speed switching, voltage clamping, line termination, reverse-polarity protection, and low-current rectification in space-constrained electronics. Typical deployments include smartphones and tablets, portable media devices, wearables and wireless earbuds, USB and battery-charging circuits, DC-DC converter bootstrap and freewheeling stages, signal-line clamping and ESD-sensitive interfaces, and general low-current rectification in consumer, computing, and industrial control boards where the SOD-523 footprint and low VF extend battery life and save board space.
Frequently Asked Questions
Q1: Is the RB751S40 still in production? The original ROHM RB751S-40TE61 is in Last-Time-Buy (EOL) status, but onsemi and Nexperia continue to supply functionally identical second sources (RB751S40T1G and RB751S40,115), and ROHM recommends the RB751SM-40T2R as its direct replacement.
Q2: How does the RB751S40 differ from the BAT54 series? The RB751S40 offers lower forward voltage (370 mV vs. ~320-400 mV for BAT54) in a smaller SOD-523 package with 30 mA rating, whereas the BAT54 (SOD-323/SOD-123) provides higher 200-300 mA current capability in a larger footprint.
Alternative / Replacement Schottky barrier diode Models
● RB751S40T1G — onsemi's active Pb-free second source in SOD-523 with identical 30 V/30 mA ratings, stocked in volume (12,721 units at DigiKey) for seamless production continuity.
● RB751S40T5G — onsemi's alternate tape-and-reel variant of the same silicon, providing a drop-in option when T1G supply is constrained.
● RB751S40,115 (Nexperia) — Nexperia's version of the same planar Schottky with guard ring in SOD-523, delivering the same 40 V/30 mA performance under IEC-60134 qualification.
● PMEG4002EJ,115 — Nexperia's 40 V, 100 mA small-signal Schottky in SOD-323FL for designs needing higher current margin than the 30 mA RB751S40.
● BAT54 (ST / Vishay / Nexperia) — Industry-standard 30-40 V, 200-300 mA general-purpose Schottky in SOD-323/SOD-123, offering greater current capability in a slightly larger footprint.
