Model No: PESD5V0L1BA,115
Nexperia USA Inc. PESD5V0L1BA,115
Manufacturer: Nexperia USA Inc.
SEMICON NO.: PESD5V0L1BA,115
Package: SOD-323
Stock: In stock
Description: ESD Protection Diode Low Capacitance Bi-Directional
SEMICON NO.: PESD5V0L1BA,115
Package: SOD-323
Stock: In stock
Description: ESD Protection Diode Low Capacitance Bi-Directional
Quantity :
| Mfr | Nexperia USA Inc. |
| Diode Type / Configuration | TVS (Zener), Single-Channel, Bi-Directional |
| Reverse Stand-off Voltage (Vr / Vrwm) | 5 V (Maximum) |
| Breakdown Voltage (Vbr) | 7 V (Minimum) |
| Clamping Voltage (Vc) | 33 V @ Ipp |
| Peak Pulse Current (Ipp) | 15 A (8/20 µs) |
| Peak Pulse Power (Ppp) | 500 W |
| Typical Junction Capacitance (Cj) | 75 pF @ 1 MHz |
| ESD Protection Level (IEC 61000-4-2) | > 23 kV (Contact, Level 4) |
| Operating Temperature | -65°C to +150°C |
| Package | SOD-323 (SC-76) |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
PESD5V0L1BA,115 TVS Diode Chip
The PESD5V0L1BA,115 is a high-performance, low-capacitance, bidirectional transient voltage suppressor (TVS) diode designed by Nexperia. It is specifically engineered to protect electronic circuits from electrostatic discharge (ESD) and other transient voltage events. This Diode is ideal for applications requiring robust ESD protection in a compact form factor.
The PESD5V0L1BA,115 features a maximum reverse standoff voltage (VRWM) of 5V and a minimum breakdown voltage (VBR) of 7V. It supports a maximum clamping voltage (VC) of 33V at a peak pulse current (IPP) of 15A, ensuring effective protection against voltage spikes. The device has a low leakage current (IRM) of less than 0.09µA and a typical capacitance (Cd) of 75pF at 1MHz.
PESD5V0L1BA,115 ESD Protection Diode Applications
The PESD5V0L1BA,115 is widely used in applications requiring ESD protection, such as computers and peripherals, communication systems, audio and video equipment, data lines, and CAN bus protection. Its low capacitance and compact size make it ideal for high-speed signal lines where signal integrity is critical.
AlternativeTVS diodeModels
● ESD5Z5.0V: A similar ESD protection diode from Littelfuse, offering comparable clamping voltage and peak pulse current, suitable for applications requiring robust ESD protection.
● SMAJ5.0A: A TVS diode from ON Semiconductor, featuring similar voltage ratings and suitable for applications needing high surge protection.
● PESD5V0L2BT,115: A bidirectional TVS diode from Nexperia with similar specifications, suitable for applications requiring slightly higher capacitance.
The PESD5V0L1BA,115 is a high-performance, low-capacitance, bidirectional transient voltage suppressor (TVS) diode designed by Nexperia. It is specifically engineered to protect electronic circuits from electrostatic discharge (ESD) and other transient voltage events. This Diode is ideal for applications requiring robust ESD protection in a compact form factor.
The PESD5V0L1BA,115 features a maximum reverse standoff voltage (VRWM) of 5V and a minimum breakdown voltage (VBR) of 7V. It supports a maximum clamping voltage (VC) of 33V at a peak pulse current (IPP) of 15A, ensuring effective protection against voltage spikes. The device has a low leakage current (IRM) of less than 0.09µA and a typical capacitance (Cd) of 75pF at 1MHz.
PESD5V0L1BA,115 ESD Protection Diode Applications
The PESD5V0L1BA,115 is widely used in applications requiring ESD protection, such as computers and peripherals, communication systems, audio and video equipment, data lines, and CAN bus protection. Its low capacitance and compact size make it ideal for high-speed signal lines where signal integrity is critical.
AlternativeTVS diodeModels
● ESD5Z5.0V: A similar ESD protection diode from Littelfuse, offering comparable clamping voltage and peak pulse current, suitable for applications requiring robust ESD protection.
● SMAJ5.0A: A TVS diode from ON Semiconductor, featuring similar voltage ratings and suitable for applications needing high surge protection.
● PESD5V0L2BT,115: A bidirectional TVS diode from Nexperia with similar specifications, suitable for applications requiring slightly higher capacitance.
