Nexperia USA Inc. PBHV8215Z-115

Manufacturer: Nexperia USA Inc.
SEMICON NO.: PBHV8215Z,115
Package: SOT-223
Stock: In stock
Description: BJT Transistor NPN 150 V 2 A 33MHz 1.45 W

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Mfr	Nexperia USA Inc.
Device Type	NPN High-Voltage Transistor
Polarity	NPN
Collector-Emitter Voltage	150 V
Collector-Base Voltage	350 V
Emitter-Base Voltage	6 V
Continuous Collector Current	2 A
Peak Collector Current	2 A
Total Power Dissipation	730 mW to 1.45 W
Operating Junction Temperature	150 °C
Package	SOT-223
Mounting Type	Surface Mount
Compliance	RoHS Compliant

The PBHV8215Z,115 is a Nexperia NPN high-voltage, low-VCEsat"Breakthrough In Small Signal"(BISS) transistor rated at 150 V VCEO and 2 A collector current, housed in a medium-power SOT-223 (SC-73) surface-mount plastic package with an increased heatsink tab and supplied on tape-and-reel (115 suffix) for automated assembly. Combining a high collector current capability of 2 A (4 A peak), a 33 MHz transition frequency, saturation voltage as low as 15 mV at 100 mA, and AEC-Q101 automotive qualification over −55 °C to +150 °C, it delivers the voltage robustness of a power transistor in the footprint of a small-signal device.
Key Features & Benefits
● High 150 V VCEO / 350 V VCBO Rating: Withstands 100 V+ rails and load-dump-class transients that ordinary small-signal NPNs cannot tolerate.
● Very Low VCEsat (15 mV typ at 100 mA): Minimizes conduction losses and self-heating in switching and linear pass applications; RCEsat is only 85 mΩ typical.
● High 2 A Continuous / 4 A Peak Collector Current: Supports LED-string drive and motor pre-drive currents well beyond typical SOT-23 devices.
● High hFE at High IC (min 55 at 2 A): Guaranteed current gain of 100+ at 1 A keeps base drive requirements low even at full load.
Frequently Asked Questions
Q: What is the maximum junction temperature?
A: 150 °C, with storage down to −65 °C; power dissipation must be derated above 25 °C ambient per the datasheet curves.
Q: Does it require a base drive resistor or snubber?
A: Yes—size the base resistor for the required IC/hFE, and add a base-emitter pulldown (e.g., 1 kΩ) in switching applications to ensure clean turn-off; inductive loads require a flyback diode or clamp.
Recommended Alternative BISS transistors
1. PBHV8540T,215 — A 500 V-rated BISS NPN in a smaller SOT-23 package for higher-voltage, lower-current designs.
2. PDTA114E / BCX56-16 alternatives (Nexperia) — Standard small-signal options when 150 V robustness is not required.
3. BSS138P or 2N5551 class parts — Lower-voltage general-purpose NPNs for non-automotive, low-cost switching.
4. Nexperia PMPB11EN (MOSFET) — An N-channel logic-level MOSFET for designers preferring voltage-driven switching over BJT base current.