Model No: NX3008CBKS,115
Nexperia USA Inc. NX3008CBKS,115
Manufacturer: Nexperia USA Inc.
SEMICON NO.: NX3008CBKS,115
Package: SC-88 (SOT-363)
Stock: In stock
Description: N/P-CH MOSFET 20V 6TSSOP
SEMICON NO.: NX3008CBKS,115
Package: SC-88 (SOT-363)
Stock: In stock
Description: N/P-CH MOSFET 20V 6TSSOP
Quantity :
| Mfr | Nexperia USA Inc. |
| Product Type | Dual N-Channel Enhancement Mode MOSFET |
| Technology | TrenchFET® |
| Drain-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID) | 1.5 A per MOSFET |
| Gate-Source Voltage (VGS) | ±8 V |
| Drain-Source On-Resistance (RDS(on)) | < 100 mΩ @ VGS = 4.5 V, ID = 1.0 A < 65 mΩ @ VGS = 10 V, ID = 1.5 A |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 2.0 V |
| Total Gate Charge (Qg) | 3.5 nC (Typ) @ VGS = 4.5 V |
| Input Capacitance (Ciss) | 85 pF (Typ) |
| Power Dissipation (Ptot) | 1.1 W (Total for both MOSFETs) |
| Operating Temperature | -55 °C to +150 °C |
| Package | SC-88 (SOT-363) |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
NX3008CBKS,115 N-channel Trench MOSFET low-side switch
NX3008CBKS,115 is a dual N/P-channel enhancement-mode MOSFET produced by Nexperia. It features a 30V drain-source voltage for both N and P channels, with continuous drain currents of 350mA for the N channel and 200mA for the P channel. The device is housed in a compact SOT-363 package, making it suitable for space-constrained applications. It has a low threshold voltage of 1.1V and a gate charge of 680pC at 4.5V. The maximum power dissipation is 445mW, and it operates within a temperature range of -55℃ to +150℃.
This MOSFET is known for its very fast switching characteristics and low threshold voltage, which contribute to high efficiency and reduced power loss. Its complementary N and P channels allow for versatile applications in level shifting, power supply conversion, load switching, and switching circuits. The use of Trench MOSFET technology further enhances its performance and reliability.
NX3008CBKS MOSFET Applications
NX3008CBKS,115 is widely used in industrial and power management applications. It is ideal for creating H-bridge structures in motor drive circuits, enabling precise control of motor speed and direction. In LED drivers, it can be employed to ensure stable current control for LED lighting. Additionally, it serves as an effective switch in battery management systems, facilitating safe and efficient battery charging and discharging.
AlternativeMOSFET Chips
● 74AUP1G374GM,115: A D-type flip-flop IC with a maximum clock frequency of 28MHz and a propagation delay of 4.2ns, suitable for high-speed digital applications.
● NX3008NBK,215: A single N-channel MOSFET with a 30V drain-source voltage and a continuous drain current of 400mA, packaged in a 3-pin SOT-23 case, ideal for applications requiring higher current handling in N-channel configurations.
● NX3008PBK,215: A single P-channel MOSFET with a 30V drain-source voltage and a continuous drain current of 230mA, also in a 3-pin SOT-23 package, suitable for applications where P-channel functionality is needed.
NX3008CBKS,115 is a dual N/P-channel enhancement-mode MOSFET produced by Nexperia. It features a 30V drain-source voltage for both N and P channels, with continuous drain currents of 350mA for the N channel and 200mA for the P channel. The device is housed in a compact SOT-363 package, making it suitable for space-constrained applications. It has a low threshold voltage of 1.1V and a gate charge of 680pC at 4.5V. The maximum power dissipation is 445mW, and it operates within a temperature range of -55℃ to +150℃.
This MOSFET is known for its very fast switching characteristics and low threshold voltage, which contribute to high efficiency and reduced power loss. Its complementary N and P channels allow for versatile applications in level shifting, power supply conversion, load switching, and switching circuits. The use of Trench MOSFET technology further enhances its performance and reliability.
NX3008CBKS MOSFET Applications
NX3008CBKS,115 is widely used in industrial and power management applications. It is ideal for creating H-bridge structures in motor drive circuits, enabling precise control of motor speed and direction. In LED drivers, it can be employed to ensure stable current control for LED lighting. Additionally, it serves as an effective switch in battery management systems, facilitating safe and efficient battery charging and discharging.
AlternativeMOSFET Chips
● 74AUP1G374GM,115: A D-type flip-flop IC with a maximum clock frequency of 28MHz and a propagation delay of 4.2ns, suitable for high-speed digital applications.
● NX3008NBK,215: A single N-channel MOSFET with a 30V drain-source voltage and a continuous drain current of 400mA, packaged in a 3-pin SOT-23 case, ideal for applications requiring higher current handling in N-channel configurations.
● NX3008PBK,215: A single P-channel MOSFET with a 30V drain-source voltage and a continuous drain current of 230mA, also in a 3-pin SOT-23 package, suitable for applications where P-channel functionality is needed.
