Model No: BAV99,215
Nexperia USA Inc. BAV99,215
Manufacturer: Nexperia USA Inc.
SEMICON NO.: BAV99,215
Package: TO-236-3
Stock: In stock
Description: IC diode array 1 pair in series 100 V 215mA (DC)
SEMICON NO.: BAV99,215
Package: TO-236-3
Stock: In stock
Description: IC diode array 1 pair in series 100 V 215mA (DC)
Quantity :
| Mfr | Nexperia USA Inc. |
| Configuration | Dual diodes in series, common cathode |
| Peak Repetitive Reverse Voltage (Vrrm) | 100 V |
| Max. Continuous Forward Current (If) | 215 mA |
| Forward Voltage Drop (Vf) | 1.25 V @ 150 mA |
| Max. Reverse Recovery Time (trr) | 4 ns |
| Max. Diode Capacitance (Cj) | 1.5 pF |
| Max. Reverse Leakage Current (Ir) | 500 nA @ 80 V |
| Max. Power Dissipation (Pd) | 250 mW |
| Peak Forward Surge Current (Ifsm) | 4 A |
| Operating Temperature | -65°C to +150°C |
| Package | TO-236-3 |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
BAV99,215 switching diode
TheBAV99,215 is a high-speed switching diode designed for efficient signal switching and protection in various electronic systems. Manufactured by NXP Semiconductors, this device features a compact SOT-23 package, making it ideal for surface-mount applications where space is a critical consideration. It is widely used in high-speed switching circuits, protection circuits, communication devices, and power management systems.
BAV99,215 Specifications
The BAV99,215 features a high switching speed with a reverse recovery time of 4ns. It supports a maximum repetitive reverse voltage (VRRM) of 100V and a forward continuous current (IF) of up to 215mA. The device has a low forward voltage drop (VF) of 1.25V at 150mA, ensuring minimal power loss during operation. It also features low capacitance (Cd ≤ 1.5pF) and low leakage current, making it suitable for high-frequency applications. The BAV99,215 operates within a temperature range of -65°C to +150°C, ensuring reliability in various environmental conditions.
Alternative Switching Diode Models
● BAV99LT3G: A variant from onsemi that meets AEC-Q101 standards, making it suitable for automotive applications.
● TBAV99: A variant from Toshiba with a maximum repetitive reverse voltage of 70V, suitable for applications requiring lower voltage protection.
● KUUBAV99: A variant with a forward current of 200mA, offering slightly different electrical characteristics.
TheBAV99,215 is a high-speed switching diode designed for efficient signal switching and protection in various electronic systems. Manufactured by NXP Semiconductors, this device features a compact SOT-23 package, making it ideal for surface-mount applications where space is a critical consideration. It is widely used in high-speed switching circuits, protection circuits, communication devices, and power management systems.
BAV99,215 Specifications
The BAV99,215 features a high switching speed with a reverse recovery time of 4ns. It supports a maximum repetitive reverse voltage (VRRM) of 100V and a forward continuous current (IF) of up to 215mA. The device has a low forward voltage drop (VF) of 1.25V at 150mA, ensuring minimal power loss during operation. It also features low capacitance (Cd ≤ 1.5pF) and low leakage current, making it suitable for high-frequency applications. The BAV99,215 operates within a temperature range of -65°C to +150°C, ensuring reliability in various environmental conditions.
Alternative Switching Diode Models
● BAV99LT3G: A variant from onsemi that meets AEC-Q101 standards, making it suitable for automotive applications.
● TBAV99: A variant from Toshiba with a maximum repetitive reverse voltage of 70V, suitable for applications requiring lower voltage protection.
● KUUBAV99: A variant with a forward current of 200mA, offering slightly different electrical characteristics.
