Model No: ISC040N10NM8ATMA1
Infineon Technologies ISC040N10NM8ATMA1
Manufacturer: Infineon Technologies
SEMICON NO.: ISC040N10NM8ATMA1
Package: PG-TDSON-8
Stock: In stock
Description: Power MOSFET OptiMOS 8
SEMICON NO.: ISC040N10NM8ATMA1
Package: PG-TDSON-8
Stock: In stock
Description: Power MOSFET OptiMOS 8
Quantity :
| Mfr | Infineon Technologies |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) @ 25°C | 126 A |
| Pulsed Drain Current (ID,pulse) | 504 A |
| Power Dissipation (Ptot) | 150 W |
| Operating Temperature | -55°C to +175°C |
| Package | PG-TDSON-8 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
ISC040N10NM8ATMA1 N-channel enhancement-mode power MOSFET
The ISC040N10NM8ATMA1 is a new-generation OptiMOS™ 8 N-channel enhancement-mode power MOSFET manufactured by Infineon Technologies, shipped in tape-and-reel PG-TDSON-8 (SuperSO8 5×6mm) exposed pad surface-mount packaging for high-volume SMT production, fully RoHS3 and halogen-free compliant with MSL 1 moisture sensitivity rating, rated for 100 V drain-source breakdown voltage, 40 A continuous drain current at 25°C ambient temperature, 150 W maximum power dissipation at 25°C case temperature, operating within a junction temperature range of -55 °C to 150 °C, supporting ±30 V gate-source voltage, built with upgraded silicon trench technology to balance ultra-low conduction loss and minimized switching charge, and factory 100% avalanche tested to deliver robust surge resistance for medium-voltage high-efficiency power conversion systems.
With 100 V voltage rating, balanced low Rds(on) and gate charge, ISC040N10NM8ATMA1 serves as the primary switching power device for 48 V industrial intermediate bus converters, high-density DC-DC telecom power supplies, battery-powered drone FOC motor inverters, solar micro-inverter power stages, high-current battery charger modules, portable welding auxiliary converters, UPS backup power circuits, and industrial servo motor drive hardware, its compact SuperSO8 footprint fits miniaturized power PCB designs, while wide temperature tolerance and avalanche ruggedness ensure stable long-term operation in outdoor renewable energy and vibration-prone factory automation equipment exposed to voltage spikes and temperature swings.
Alternative N-channel MOSFET Models
● ISC040N10NM7ATMA1: Pin-compatible OptiMOS™7 generation 100 V/40 A SuperSO8 MOSFET with identical package and voltage/current ratings, offering cost advantages as a drop-in replacement during stock shortages.
● BSC040N10NS5ATMA1: OptiMOS™5 vintage 100 V power MOSFET in matching TDSON-8 package, stable long-lifecycle component for legacy equipment hardware retention projects.
● ISC060N10NM8ATMA1: Higher-current OptiMOS™8 variant with 60 A continuous drain current and same 100 V breakdown voltage, selected for upgraded high-power inverter and charger designs.
● STL40N10F7: STMicroelectronics cross-brand 100 V/40 A SuperSO8 N-channel MOSFET with comparable low on-resistance, usable as secondary cross-brand substitute for supply risk mitigation.
With 100 V voltage rating, balanced low Rds(on) and gate charge, ISC040N10NM8ATMA1 serves as the primary switching power device for 48 V industrial intermediate bus converters, high-density DC-DC telecom power supplies, battery-powered drone FOC motor inverters, solar micro-inverter power stages, high-current battery charger modules, portable welding auxiliary converters, UPS backup power circuits, and industrial servo motor drive hardware, its compact SuperSO8 footprint fits miniaturized power PCB designs, while wide temperature tolerance and avalanche ruggedness ensure stable long-term operation in outdoor renewable energy and vibration-prone factory automation equipment exposed to voltage spikes and temperature swings.
Alternative N-channel MOSFET Models
● ISC040N10NM7ATMA1: Pin-compatible OptiMOS™7 generation 100 V/40 A SuperSO8 MOSFET with identical package and voltage/current ratings, offering cost advantages as a drop-in replacement during stock shortages.
● BSC040N10NS5ATMA1: OptiMOS™5 vintage 100 V power MOSFET in matching TDSON-8 package, stable long-lifecycle component for legacy equipment hardware retention projects.
● ISC060N10NM8ATMA1: Higher-current OptiMOS™8 variant with 60 A continuous drain current and same 100 V breakdown voltage, selected for upgraded high-power inverter and charger designs.
● STL40N10F7: STMicroelectronics cross-brand 100 V/40 A SuperSO8 N-channel MOSFET with comparable low on-resistance, usable as secondary cross-brand substitute for supply risk mitigation.
