Model No: IRS21867STRPBF
Infineon Technologies IRS21867STRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRS21867STRPBF
Package: 8-SOIC
Stock: In stock
Description: Gate Driver IC Half-Bridge 2 4A 120µA
SEMICON NO.: IRS21867STRPBF
Package: 8-SOIC
Stock: In stock
Description: Gate Driver IC Half-Bridge 2 4A 120µA
Quantity :
| Mfr | Infineon Technologies |
| Device Type | High- and Low-Side Gate Driver IC |
| Configuration | Half-Bridge, High-Side / Low-Side Channels |
| Number of Drivers | 2 |
| Input Type | CMOS, TTL Compatible |
| Logic Voltage | 0.8 V / 2.5 V |
| Input Logic Compatibility | Compatible with 3.3 V, 5 V, and 15 V logic |
| Peak Output Current (Source / Sink) | 4 A / 4 A |
| Gate Type | N-Channel MOSFET, IGBT |
| Output Configuration | Half-Bridge |
| Supply Voltage | 10 V to 20 V |
| Quiescent Current | 120 µA (Typ) |
| Operating Temperature | –40°C to +150°C |
| Package | 8-SOIC |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IRS21867STRPBF Infineon 600 V, 4 A High- and Low-Side Gate Driver IC
The IRS21867STRPBF from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT gate driver IC featuring independent high-side and low-side referenced output channels in a compact 8-SOIC package, utilizing proprietary HVIC and latch-immune CMOS technologies for ruggedized monolithic construction. The floating high-side channel is designed for bootstrap operation and is fully operational to +600 V, while the gate-drive supply range spans 6.8 V to 20 V with 4 A peak source/sink output current, enabling robust half-bridge or dual low-side switching configurations for IGBTs and N-channel power MOSFETs in demanding power-conversion applications.
The IRS21867STRPBF from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT gate driver IC featuring independent high-side and low-side referenced output channels in a compact 8-SOIC package, utilizing proprietary HVIC and latch-immune CMOS technologies for ruggedized monolithic construction. The floating high-side channel is designed for bootstrap operation and is fully operational to +600 V, while the gate-drive supply range spans 6.8 V to 20 V with 4 A peak source/sink output current, enabling robust half-bridge or dual low-side switching configurations for IGBTs and N-channel power MOSFETs in demanding power-conversion applications.
Highlights / Key Features
● 600 V high-side bootstrap operation with a floating channel that drives the upper N-channel MOSFET or IGBT in half-bridge topologies, fully operational to +600 V.
● High 4 A peak source/sink output current per channel, providing fast charging and discharging of large power-device gate capacitances to minimize switching losses.
● Fast switching with 22 ns typical rise time and 18 ns typical fall time, matched propagation delay for both channels to prevent shoot-through in bridge circuits.
● Wide 6.8 V to 20 V gate-drive supply range with 3.3 V and 5 V CMOS/TTL input-logic compatibility down to 2.5 V VIH, directly interfacing with modern microcontrollers and DSP controllers.
● Logic and power ground ±5 V offset tolerance, allowing the logic ground to differ from the power ground for improved noise immunity in mixed-signal power systems.
● Lower di/dt gate driver architecture delivering better noise immunity and reduced EMI during high-current switching events.
● Independent HIN and LIN inputs enabling flexible control of the high-side and low-side channels separately for both half-bridge and dual low-side configurations.
Applications
The IRS21867STRPBF is engineered for high-voltage power-conversion and motor-control systems requiring a robust, dual-channel gate driver. Typical applications include switching-mode power supplies (SMPS), DC-AC inverters for solar and UPS systems, industrial and appliance motor drives, induction-heating power stages, automotive power modules, class-D audio amplifiers, and any half-bridge or full-bridge power topology using 600 V-class IGBTs or MOSFETs where independent high-side/low-side gate control with bootstrap supply is needed.
Frequently Asked Questions
Q1: What is the difference between the IRS21867S and IRS2186? The IRS21867S offers 4 A peak output current with a 6.8 V to 20 V gate-supply range, while the IRS2186 provides similar 4 A drive but is characterized at a 10 V to 20 V supply range with 170 ns typical propagation delay; the IRS21867S generally delivers faster switching transitions.
Q2: Can the IRS21867STRPBF drive IGBT modules directly? Yes, its 4 A peak output and ±20 V gate-drive capability suit it for direct drive of most 600 V IGBTs and power MOSFETs up to medium power levels; for very large modules, an external booster stage may be added.
Alternative gate driver IC Models
● IRS2186STRPBF — The closely-related 600 V, 4 A half-bridge driver in the same 8-SOIC package, offering identical functionality with a slightly different supply-voltage characterization profile.
● IRS21844MPBF — A 600 V half-bridge driver with dependent (single-input) control and higher drive current, simplifying controller interfacing in fixed topologies.
● IRS2181SPBF — A lower-cost 600 V, 1.7 A high-low-side driver in 8-SOIC for applications not requiring the full 4 A peak drive capability.
● IR2184SPBF — A single-input half-bridge driver with 1.4 A/1.8 A peak currents and internal dead-time generation, reducing external logic requirements in simple bridge converters.
● 600 V high-side bootstrap operation with a floating channel that drives the upper N-channel MOSFET or IGBT in half-bridge topologies, fully operational to +600 V.
● High 4 A peak source/sink output current per channel, providing fast charging and discharging of large power-device gate capacitances to minimize switching losses.
● Fast switching with 22 ns typical rise time and 18 ns typical fall time, matched propagation delay for both channels to prevent shoot-through in bridge circuits.
● Wide 6.8 V to 20 V gate-drive supply range with 3.3 V and 5 V CMOS/TTL input-logic compatibility down to 2.5 V VIH, directly interfacing with modern microcontrollers and DSP controllers.
● Logic and power ground ±5 V offset tolerance, allowing the logic ground to differ from the power ground for improved noise immunity in mixed-signal power systems.
● Lower di/dt gate driver architecture delivering better noise immunity and reduced EMI during high-current switching events.
● Independent HIN and LIN inputs enabling flexible control of the high-side and low-side channels separately for both half-bridge and dual low-side configurations.
Applications
The IRS21867STRPBF is engineered for high-voltage power-conversion and motor-control systems requiring a robust, dual-channel gate driver. Typical applications include switching-mode power supplies (SMPS), DC-AC inverters for solar and UPS systems, industrial and appliance motor drives, induction-heating power stages, automotive power modules, class-D audio amplifiers, and any half-bridge or full-bridge power topology using 600 V-class IGBTs or MOSFETs where independent high-side/low-side gate control with bootstrap supply is needed.
Frequently Asked Questions
Q1: What is the difference between the IRS21867S and IRS2186? The IRS21867S offers 4 A peak output current with a 6.8 V to 20 V gate-supply range, while the IRS2186 provides similar 4 A drive but is characterized at a 10 V to 20 V supply range with 170 ns typical propagation delay; the IRS21867S generally delivers faster switching transitions.
Q2: Can the IRS21867STRPBF drive IGBT modules directly? Yes, its 4 A peak output and ±20 V gate-drive capability suit it for direct drive of most 600 V IGBTs and power MOSFETs up to medium power levels; for very large modules, an external booster stage may be added.
Alternative gate driver IC Models
● IRS2186STRPBF — The closely-related 600 V, 4 A half-bridge driver in the same 8-SOIC package, offering identical functionality with a slightly different supply-voltage characterization profile.
● IRS21844MPBF — A 600 V half-bridge driver with dependent (single-input) control and higher drive current, simplifying controller interfacing in fixed topologies.
● IRS2181SPBF — A lower-cost 600 V, 1.7 A high-low-side driver in 8-SOIC for applications not requiring the full 4 A peak drive capability.
● IR2184SPBF — A single-input half-bridge driver with 1.4 A/1.8 A peak currents and internal dead-time generation, reducing external logic requirements in simple bridge converters.
