Model No: IRLML2502TRPBF
Infineon Technologies IRLML2502TRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRLML2502TRPBF
Package: SOT-23-3
Stock: In stock
Description: Power MOSFET N-Channel 20V 4.2A 45mΩ
SEMICON NO.: IRLML2502TRPBF
Package: SOT-23-3
Stock: In stock
Description: Power MOSFET N-Channel 20V 4.2A 45mΩ
Quantity :
| Mfr | Infineon Technologies |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Product Series | HEXFET® Power MOSFET |
| Drain-Source Voltage | 20 V |
| Gate-Source Voltage | ±12 V |
| Continuous Drain Current @ 25°C | 4.2 A |
| Power Dissipation@ 25°C | 1.25 W |
| Drain-Source On-Resistance | 45 mΩ (Max) |
| Gate Threshold Voltage | 1.2 V (Max), 0.65 V (Min) |
| Gate Charge | 12 nC (Max) |
| Input Capacitance | 740 pF (Max) |
| Output Capacitance | 90 pF (Typ) |
| Reverse Transfer Capacitance | 66 pF (Typ) |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-23-3 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The IRLML2502TRPBF is an N-channel HEXFET power MOSFET manufactured by Infineon Technologies (formerly International Rectifier), featuring a drain-source voltage rating of 20V and a continuous drain current of 4.2A in a compact SOT-23 (Micro3) surface-mount package. This device utilizes advanced processing techniques to achieve ultra-low on-resistance of 45mΩ at VGS = 4.5V, enabling efficient power switching with minimal conduction losses. The logic-level gate design allows direct drive from 3.3V or 5V microcontroller outputs without additional driver circuitry, simplifying system design in space-constrained applications.
The IRLML2502TRPBF serves as an essential component in DC-DC converter circuits, where its low on-resistance and fast switching characteristics enable efficient voltage regulation in buck, boost, and inverting topologies. It functions effectively as a low-side load switch in power management systems, controlling power distribution to subsystems in battery-operated devices, portable electronics, and embedded controllers. Additional applications include motor drive circuits for small DC motors and fans, battery charging and protection circuits, and level-shifting interfaces between different voltage domains in mixed-signal systems where its logic-level gate compatibility proves particularly valuable.
FAQs
Q: What is the maximum gate-source voltage rating?
A: The gate-source voltage is rated at ±12V absolute maximum, and exceeding this rating can permanently damage the gate oxide layer.
Q: What are the thermal considerations for this SOT-23 package?
A: The thermally enhanced large-pad leadframe provides 1.25W power dissipation at 25°C ambient, but designers must ensure adequate PCB copper area for heat spreading and consider derating above 25°C ambient temperature.
Q: What is the maximum gate-source voltage rating?
A: The gate-source voltage is rated at ±12V absolute maximum, and exceeding this rating can permanently damage the gate oxide layer.
Q: What are the thermal considerations for this SOT-23 package?
A: The thermally enhanced large-pad leadframe provides 1.25W power dissipation at 25°C ambient, but designers must ensure adequate PCB copper area for heat spreading and consider derating above 25°C ambient temperature.
Alternative MOSFET Models
● Vishay SI2302CDS: A 20V N-channel TrenchFET MOSFET in SOT-23 with similar 50mΩ on-resistance and logic-level gate drive, offering comparable performance for space-constrained power switching.
● Diodes Incorporated DMN2075U: A 20V N-channel MOSFET with 75mΩ on-resistance in SOT-23 package, delivering cost-effective switching performance for general-purpose load control applications.
● Toshiba SSM3K357R: A 30V N-channel MOSFET featuring ultra-low 33mΩ RDS(on) in SOT-23 package, offering superior efficiency for battery-powered portable devices requiring minimal conduction losses.
● Vishay SI2302CDS: A 20V N-channel TrenchFET MOSFET in SOT-23 with similar 50mΩ on-resistance and logic-level gate drive, offering comparable performance for space-constrained power switching.
● Diodes Incorporated DMN2075U: A 20V N-channel MOSFET with 75mΩ on-resistance in SOT-23 package, delivering cost-effective switching performance for general-purpose load control applications.
● Toshiba SSM3K357R: A 30V N-channel MOSFET featuring ultra-low 33mΩ RDS(on) in SOT-23 package, offering superior efficiency for battery-powered portable devices requiring minimal conduction losses.
