Model No: IRFB4332PBF
Infineon Technologies IRFB4332PBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRFB4332PBF
Package: TO-220AB
Stock: In stock
Description: MOSFET N-Channel 250V 60A
SEMICON NO.: IRFB4332PBF
Package: TO-220AB
Stock: In stock
Description: MOSFET N-Channel 250V 60A
Quantity :
| Mfr | Infineon Technologies |
| Product Family | HEXFET® Power MOSFET |
| Device Type | Single N-Channel Enhancement Mode MOSFET |
| Drain-to-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) | 60 A |
| Power Dissipation (PD) | 390 W |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Input Capacitance (Ciss) | 5860 pF (Typ) |
| Output Capacitance (Coss) | 530 pF (Typ) |
| Operating Temperature | -55°C to +175°C |
| Package | TO-220AB |
| Mounting Type | Through Hole |
| Compliance | RoHS Compliant |
IRFB4332PBF N-channel HEXFET power MOSFET
The IRFB4332PBF is an N-channel HEXFET power MOSFET optimized for high-voltage, high-current switching applications such as PDP sustain, energy recovery, and pass switches, offering a drain-to-source voltage rating of 250 V and a typical on-resistance of 29 mΩ at VGS = 10 V, enabling efficient power conversion with reduced conduction losses. It supports a continuous drain current of 60 A at TC = 25°C, 42 A at 100°C, a pulsed drain current up to 230 A, and a maximum power dissipation of 390 W, housed in a TO-220AB package for robust thermal performance and ease of heatsinking, while operating junction temperatures range from -55°C to 175°C. Designed with advanced process technology, the device features low total gate charge (typ. 99 nC) and fast switching for quick response, high repetitive peak current capability (up to 120 A at TC = 100°C), and repetitive avalanche ruggedness for reliable operation under inductive clamping and energy recovery scenarios. The MOSFET is suitable for demanding industrial and consumer power stages.
Alternative N-channel MOSFET Models
1. Infineon IRFB4410ZPBF: 100 V N-channel MOSFET with 97 A continuous drain current, low RDS(on) typ. 7.2 mΩ, and low gate charge for high-efficiency synchronous rectification and fast power switching in TO-220AB.
2. IXYS (Littelfuse) IXTN90N25L2: 250 V, 90 A N-channel MOSFET in a SOT-227B (miniBLOC) package with extended FBSOA and low thermal resistance, designed for linear and high-power switching applications.
3. onsemi FDP26N40: 250 V N-channel MOSFET with 26 A continuous drain current and planar stripe DMOS technology, providing robust avalanche performance and reliable operation in power supply and motor drive circuits.
The IRFB4332PBF is an N-channel HEXFET power MOSFET optimized for high-voltage, high-current switching applications such as PDP sustain, energy recovery, and pass switches, offering a drain-to-source voltage rating of 250 V and a typical on-resistance of 29 mΩ at VGS = 10 V, enabling efficient power conversion with reduced conduction losses. It supports a continuous drain current of 60 A at TC = 25°C, 42 A at 100°C, a pulsed drain current up to 230 A, and a maximum power dissipation of 390 W, housed in a TO-220AB package for robust thermal performance and ease of heatsinking, while operating junction temperatures range from -55°C to 175°C. Designed with advanced process technology, the device features low total gate charge (typ. 99 nC) and fast switching for quick response, high repetitive peak current capability (up to 120 A at TC = 100°C), and repetitive avalanche ruggedness for reliable operation under inductive clamping and energy recovery scenarios. The MOSFET is suitable for demanding industrial and consumer power stages.
Alternative N-channel MOSFET Models
1. Infineon IRFB4410ZPBF: 100 V N-channel MOSFET with 97 A continuous drain current, low RDS(on) typ. 7.2 mΩ, and low gate charge for high-efficiency synchronous rectification and fast power switching in TO-220AB.
2. IXYS (Littelfuse) IXTN90N25L2: 250 V, 90 A N-channel MOSFET in a SOT-227B (miniBLOC) package with extended FBSOA and low thermal resistance, designed for linear and high-power switching applications.
3. onsemi FDP26N40: 250 V N-channel MOSFET with 26 A continuous drain current and planar stripe DMOS technology, providing robust avalanche performance and reliable operation in power supply and motor drive circuits.
