Model No: IRFB3206PBF
Infineon Technologies IRFB3206PBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRFB3206PBF
Package: TO-220AB
Stock: In stock
Description: N-Channel 60 V 120A (Tc) 300W (Tc)
SEMICON NO.: IRFB3206PBF
Package: TO-220AB
Stock: In stock
Description: N-Channel 60 V 120A (Tc) 300W (Tc)
Quantity :
| Mfr | Infineon Technologies |
| Device Type | Single N-Channel Power MOSFET |
| Drain-Source Voltage (VDSS) | 60 V |
| Continuous Drain Current (ID) @ 25°C | 210 A / 120 A |
| Power Dissipation (PD) | 300 W |
| Gate-Source Voltage (VGS) | ±20 V |
| Drain-Source On-Resistance (RDS(on)) | 3.0 mΩ (Max) |
| Gate Threshold Voltage (VGS(th)) | 4 V (Max) |
| Gate Charge (Qg) | 120 nC (Typ) / 170 nC (Max) |
| Output Capacitance (Coss) | 720 pF (Typ) |
| Reverse Transfer Capacitance (Crss) | 360 pF (Typ) |
| Gate-Source Voltage (VGS) | ±20 V |
| Operating Temperature | -55°C to +175°C |
| Package | TO-220AB |
| Mounting Type | Through Hole |
| Compliance | RoHS Compliant |
The IRFB3206PBF is an N-channel enhancement mode HEXFET power MOSFET manufactured by Infineon, supplied in 3-pin TO-220AB through-hole tube package, rated for 60V drain-source voltage and 210A continuous drain current, featuring ultra-low 3mΩ maximum on-resistance at VGS=10V, maximum power dissipation of 300W, ±20V gate-source rating and wide operating junction temperature from -55°C to +175°C, designed for high-current, low-loss switching applications in power supplies and motor drive systems.
Key Features
● Extremely low Rds(on) of 3mΩ at 10V gate drive, minimizing conduction loss and thermal buildup under high load current conditions.
● High continuous drain current rating of 210A with 60V VDS breakdown voltage, suitable for high-current DC switching and synchronous rectification circuits.
● Robust avalanche capability and improved dV/dt immunity, offering reliable transient withstand for inductive load switching scenarios.
● Total gate charge of 170nC and defined capacitance parameters, enabling predictable high-speed switching performance for power converter designs.
● TO-220AB through-hole package with good thermal conductivity, RoHS lead-free construction, wide temperature range for industrial power hardware.
● Extremely low Rds(on) of 3mΩ at 10V gate drive, minimizing conduction loss and thermal buildup under high load current conditions.
● High continuous drain current rating of 210A with 60V VDS breakdown voltage, suitable for high-current DC switching and synchronous rectification circuits.
● Robust avalanche capability and improved dV/dt immunity, offering reliable transient withstand for inductive load switching scenarios.
● Total gate charge of 170nC and defined capacitance parameters, enabling predictable high-speed switching performance for power converter designs.
● TO-220AB through-hole package with good thermal conductivity, RoHS lead-free construction, wide temperature range for industrial power hardware.
FAQ
Q: What design notes apply to IRFB3206PBF?
A: Use proper thermal heat sink to control junction temperature, add gate resistor for high-speed switching to suppress oscillation, and confirm end-of-life status before launching new mass production projects.
Q: What design notes apply to IRFB3206PBF?
A: Use proper thermal heat sink to control junction temperature, add gate resistor for high-speed switching to suppress oscillation, and confirm end-of-life status before launching new mass production projects.
Alternative power MOSFETs
● IRFB3206GPBF: TO-220AB packaged upgraded version with identical voltage and current ratings, active production replacement for the obsolete IRFB3206PBF.
● IRF3205PBF: 55V N-channel TO-220 MOSFET with slightly higher on-resistance, cost-effective substitute for projects with relaxed loss requirements.
● IRFB4104PBF: TO-220 power MOSFET with 40V rating and lower Rds(on), suitable for higher-current low-voltage power conversion designs.
● IRFB3206GPBF: TO-220AB packaged upgraded version with identical voltage and current ratings, active production replacement for the obsolete IRFB3206PBF.
● IRF3205PBF: 55V N-channel TO-220 MOSFET with slightly higher on-resistance, cost-effective substitute for projects with relaxed loss requirements.
● IRFB4104PBF: TO-220 power MOSFET with 40V rating and lower Rds(on), suitable for higher-current low-voltage power conversion designs.
