Model No: IRF7862TRPBF
Infineon Technologies IRF7862TRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRF7862TRPBF
Package: 8-SOIC
Stock: In stock
Description: N-Channel 30 V 21A 2.5W
SEMICON NO.: IRF7862TRPBF
Package: 8-SOIC
Stock: In stock
Description: N-Channel 30 V 21A 2.5W
Quantity :
| Mfr | Infineon Technologies |
| Device Type | Single N-Channel Power MOSFET |
| Drain-Source Voltage | 30 V |
| Continuous Drain Current | 21 A (Ta) |
| Power Dissipation | 2.5 W (Ta) |
| Gate-Source Voltage | ±20 V |
| Drain-Source On-Resistance | 3.7 mΩ (Max) |
| Gate-Source Threshold Voltage | 2.35 V (Max) |
| Gate Charge | 45 nC (Max) |
| Input Capacitance | 4090 pF (Max) |
| Output Capacitance | 810 pF (Typ) |
| Reverse Transfer Capacitance | 390 pF (Typ) |
| Operating Temperature | -55°C to +150°C |
| Package | 8-SOIC |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IRF7862TRPBF HEXFET power MOSFET
The IRF7862TRPBF is an N-channel HEXFET power MOSFET developed by Infineon Technologies, designed for low-voltage, high-current switching applications requiring high efficiency and compact size. It features a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 21A, and a low on-state resistance (RDS(on)) of 4.5mΩ at VGS=4.5V, which minimizes conduction losses and improves power conversion efficiency. With a gate charge (Qg) of 45nC and low input capacitance (Ciss=4.09nF), it enables fast switching speeds and reduces driver power consumption, making it suitable for high-frequency operation.
The HEXFET MOSFET is housed in a standard SO-8 surface-mount package, which offers a small footprint for space-constrained PCB designs and supports automated assembly. It operates reliably across a wide temperature range from -55°C to 150°C, ensuring stable performance in harsh industrial and portable electronic environments. This MOSFET also features ultra-low gate impedance and 100% tested gate resistance (Rg), enhancing circuit stability and reliability. Typical applications include battery protection circuits, high-side and low-side load switches, notebook processor power supplies, and isolated DC-DC converters. Compliant with RoHS and halogen-free standards, it meets environmental requirements for modern electronic products.
Alternative power transistors
● SI2302 (Vishay): A 30V N-channel MOSFET with 20A continuous current and 5mΩ RDS(on) in SOT-23 package, ideal for low-voltage switching and battery management.
● AO3407 (AOS): A 30V N-channel MOSFET featuring 18A drain current, 6mΩ on-resistance, and SOT-23 packaging, suitable for load switches and DC-DC converters.
● FDN369 (Fairchild): A 30V N-channel power MOSFET with 22A continuous current, 4.8mΩ RDS(on), and SO-8 package, offering similar performance for high-current applications.
The IRF7862TRPBF is an N-channel HEXFET power MOSFET developed by Infineon Technologies, designed for low-voltage, high-current switching applications requiring high efficiency and compact size. It features a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 21A, and a low on-state resistance (RDS(on)) of 4.5mΩ at VGS=4.5V, which minimizes conduction losses and improves power conversion efficiency. With a gate charge (Qg) of 45nC and low input capacitance (Ciss=4.09nF), it enables fast switching speeds and reduces driver power consumption, making it suitable for high-frequency operation.
The HEXFET MOSFET is housed in a standard SO-8 surface-mount package, which offers a small footprint for space-constrained PCB designs and supports automated assembly. It operates reliably across a wide temperature range from -55°C to 150°C, ensuring stable performance in harsh industrial and portable electronic environments. This MOSFET also features ultra-low gate impedance and 100% tested gate resistance (Rg), enhancing circuit stability and reliability. Typical applications include battery protection circuits, high-side and low-side load switches, notebook processor power supplies, and isolated DC-DC converters. Compliant with RoHS and halogen-free standards, it meets environmental requirements for modern electronic products.
Alternative power transistors
● SI2302 (Vishay): A 30V N-channel MOSFET with 20A continuous current and 5mΩ RDS(on) in SOT-23 package, ideal for low-voltage switching and battery management.
● AO3407 (AOS): A 30V N-channel MOSFET featuring 18A drain current, 6mΩ on-resistance, and SOT-23 packaging, suitable for load switches and DC-DC converters.
● FDN369 (Fairchild): A 30V N-channel power MOSFET with 22A continuous current, 4.8mΩ RDS(on), and SO-8 package, offering similar performance for high-current applications.
