Model No: IRF7314TRPBF
Infineon Technologies IRF7314TRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRF7314TRPBF
Package: 8-SOIC
Stock: In stock
Description: MOSFET Array 20V 5.3A 2W
SEMICON NO.: IRF7314TRPBF
Package: 8-SOIC
Stock: In stock
Description: MOSFET Array 20V 5.3A 2W
Quantity :
| Mfr | Infineon Technologies |
| Product Family | HEXFET® Power MOSFET |
| Device Type | Dual P-Channel MOSFET |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain-Source Voltage | -20 V (P-Channel) / 20 V (N-Channel) |
| Continuous Drain Current | -5.3 A@ 25°C |
| Power Dissipation | 2 W |
| Drain-Source On-Resistance | 58 mΩ (Max), 49 mΩ (Typ) |
| Gate-Source Threshold Voltage | 700 mV (Max) |
| Gate Charge | 29 nC (Max) |
| Input Capacitance | 780 pF (Max) |
| Maximum Gate-Source Voltage | ±12 V |
| Operating Temperature | -55°C to +150°C |
| Package | 8-SOIC |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IRF7314TRPBF HEXFET power MOSFET
The IRF7314TRPBF is a dual P-channel HEXFET power MOSFET from Infineon Technologies, housed in a space-saving SO-8 package, designed for high-efficiency power switching and management in a wide variety of applications. This device utilizes advanced Generation V processing techniques to achieve an ultra-low on-state resistance (Rds(on)) per silicon area, with a typical Rds(on) of 49mΩ at Vgs=-10V and Id=-5.3A, supporting a maximum drain-source voltage (Vds) of -20V and continuous drain current (Id) of -5.3A per channel.
Its key performance highlights include fast switching speeds enabled by the advanced HEXFET technology, which minimizes switching losses and improves overall system efficiency. The SO-8 package incorporates a customized lead-frame design for enhanced thermal characteristics and dual-die capability, allowing for better heat dissipation and enabling the use of multiple devices in applications with dramatically reduced board space. This combination of low Rds(on), compact footprint, and improved thermal performance makes it an extremely efficient and ruggedized device for power management tasks.
Compatible Alternative P-channel MOSFET List
● SI7336ADP-T1-GE3: A Vishay Siliconix dual P-channel MOSFET in a PowerPAK® SO-8 package, offering similar electrical characteristics with potentially lower Rds(on) and enhanced thermal performance.
● FDMC2610: A Fairchild (ON Semiconductor) dual P-channel MOSFET in an SO-8 package, providing a competitive alternative with comparable voltage and current ratings for general-purpose switching.
● AO4800A: An Alpha & Omega Semiconductor dual P-channel MOSFET with low gate charge and Rds(on), serving as a cost-effective alternative for space-constrained power management designs.
The IRF7314TRPBF is a dual P-channel HEXFET power MOSFET from Infineon Technologies, housed in a space-saving SO-8 package, designed for high-efficiency power switching and management in a wide variety of applications. This device utilizes advanced Generation V processing techniques to achieve an ultra-low on-state resistance (Rds(on)) per silicon area, with a typical Rds(on) of 49mΩ at Vgs=-10V and Id=-5.3A, supporting a maximum drain-source voltage (Vds) of -20V and continuous drain current (Id) of -5.3A per channel.
Its key performance highlights include fast switching speeds enabled by the advanced HEXFET technology, which minimizes switching losses and improves overall system efficiency. The SO-8 package incorporates a customized lead-frame design for enhanced thermal characteristics and dual-die capability, allowing for better heat dissipation and enabling the use of multiple devices in applications with dramatically reduced board space. This combination of low Rds(on), compact footprint, and improved thermal performance makes it an extremely efficient and ruggedized device for power management tasks.
Compatible Alternative P-channel MOSFET List
● SI7336ADP-T1-GE3: A Vishay Siliconix dual P-channel MOSFET in a PowerPAK® SO-8 package, offering similar electrical characteristics with potentially lower Rds(on) and enhanced thermal performance.
● FDMC2610: A Fairchild (ON Semiconductor) dual P-channel MOSFET in an SO-8 package, providing a competitive alternative with comparable voltage and current ratings for general-purpose switching.
● AO4800A: An Alpha & Omega Semiconductor dual P-channel MOSFET with low gate charge and Rds(on), serving as a cost-effective alternative for space-constrained power management designs.
