Model No: IRF7103TRPBF
Infineon Technologies IRF7103TRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRF7103TRPBF
Package: 8-SOIC
Stock: In stock
Description: IC MOSFET Array 50V 3A 2W
SEMICON NO.: IRF7103TRPBF
Package: 8-SOIC
Stock: In stock
Description: IC MOSFET Array 50V 3A 2W
Quantity :
| Mfr | Infineon Technologies |
| Technology | Advanced Process (Low Gate Charge, Low RDS(on)) |
| N-Channel (Q1) - VDS / ID | -30V / -5.3A |
| P-Channel (Q2) - VDS / ID | 30V / -4.6A |
| Gate-to-Source Voltage (VGS) | ±20V (Max) |
| Drain-to-Source On-Resistance (RDS(on)) | N-CH: 45 mΩ @ VGS = 10V, P-CH: 70 mΩ @ VGS = -10V |
| Total Gate Charge (Qg) | N-CH: 6.5 nC, P-CH: 9.5 nC (Typical @ VGS=10V) |
| Input Capacitance (Ciss) | N-CH: 280 pF, P-CH: 440 pF (Typical) |
| Drain-Source Diode Characteristics | Integrated Body Diode |
| Avalanche Energy Rating | Specified (Single Pulse) |
| Power Dissipation (PD) | 2W @ TA = 25°C |
| Operating Temperature | -55°C to +150°C |
| Package | 8-SOIC |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
IRF7103TRPBF N-Channel MOSFET
IRF7103TRPBF is a dual N-channel trench MOSFET from Infineon Technologies that integrates two independent 50 V, 3 A switches into one SOIC-8 footprint, delivering ultra-low on-resistance of 130 mΩ (max) at 10 V VGS while keeping total gate charge at only 12 nC per channel for exceptionally fast, low-loss switching . Fabricated on a rugged 175 °C-rated process and 100 % avalanche-tested, the device survives repetitive avalanche energy and offers ±20 V gate-source rating, making it a reliable, space-saving choice for half-bridge, synchronous buck, motor-bridge and battery-protection circuits in automotive, industrial and consumer power stages .
With a continuous drain current of 3 A per FET (25 °C), 50 V blocking capability and a junction-to-ambient thermal resistance of 62.5 °C/W, the MOSFET pair sustains > 2 W total dissipation in still air while maintaining < 130 mΩ RDS(on) from –55 °C to +150 °C, minimising conduction losses and heat-sink requirements .
IRF7103TRPBF MOSFET Array Application Scenarios
1. Synchronous buck converters
2. Brushed DC motor H-bridges
3. Li-ion battery-pack protection
4. Class-D audio output stages
5. Relay-replacement solid-state switches
AlternativeN-channel MOSFETModels
● Vishay Si4946DY: dual 30 V, 6.5 A, 18 mΩ SO-8, 100 % Rg-tested, optimised for 19 V notebook buck converters.
● Diodes DMP2035U-7: dual 20 V, 3.5 A, 29 mΩ, thermally-enhanced DFN2020, suits ultra-slim portable Li-poly protectors.
● ON Semi NTMS4804N: dual 30 V, 6 A, 16 mΩ, 3 mm × 3 mm DFN, enables high-frequency 1 MHz core rails with low gate losses.
● Toshiba TPCA8016-H: dual 40 V, 6 A, 15 mΩ, 5 × 6 mm TSON, AEC-Q101 qualified for 48 V mild-hybrid motor drives.
● Alpha & Omega AON7423: dual 30 V, 7 A, 12 mΩ, DFN3×3, lowest RDS·A for high-current, space-constrained wearables.
IRF7103TRPBF is a dual N-channel trench MOSFET from Infineon Technologies that integrates two independent 50 V, 3 A switches into one SOIC-8 footprint, delivering ultra-low on-resistance of 130 mΩ (max) at 10 V VGS while keeping total gate charge at only 12 nC per channel for exceptionally fast, low-loss switching . Fabricated on a rugged 175 °C-rated process and 100 % avalanche-tested, the device survives repetitive avalanche energy and offers ±20 V gate-source rating, making it a reliable, space-saving choice for half-bridge, synchronous buck, motor-bridge and battery-protection circuits in automotive, industrial and consumer power stages .
With a continuous drain current of 3 A per FET (25 °C), 50 V blocking capability and a junction-to-ambient thermal resistance of 62.5 °C/W, the MOSFET pair sustains > 2 W total dissipation in still air while maintaining < 130 mΩ RDS(on) from –55 °C to +150 °C, minimising conduction losses and heat-sink requirements .
IRF7103TRPBF MOSFET Array Application Scenarios
1. Synchronous buck converters
2. Brushed DC motor H-bridges
3. Li-ion battery-pack protection
4. Class-D audio output stages
5. Relay-replacement solid-state switches
AlternativeN-channel MOSFETModels
● Vishay Si4946DY: dual 30 V, 6.5 A, 18 mΩ SO-8, 100 % Rg-tested, optimised for 19 V notebook buck converters.
● Diodes DMP2035U-7: dual 20 V, 3.5 A, 29 mΩ, thermally-enhanced DFN2020, suits ultra-slim portable Li-poly protectors.
● ON Semi NTMS4804N: dual 30 V, 6 A, 16 mΩ, 3 mm × 3 mm DFN, enables high-frequency 1 MHz core rails with low gate losses.
● Toshiba TPCA8016-H: dual 40 V, 6 A, 15 mΩ, 5 × 6 mm TSON, AEC-Q101 qualified for 48 V mild-hybrid motor drives.
● Alpha & Omega AON7423: dual 30 V, 7 A, 12 mΩ, DFN3×3, lowest RDS·A for high-current, space-constrained wearables.
