Model No: IRF540NSTRLPBF
Infineon Technologies IRF540NSTRLPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRF540NSTRLPBF
Package: D2PAK (TO-263-3)
Stock: In stock
Description: N Channel 100 V 33 A (Tc) 130W (Tc)
SEMICON NO.: IRF540NSTRLPBF
Package: D2PAK (TO-263-3)
Stock: In stock
Description: N Channel 100 V 33 A (Tc) 130W (Tc)
Quantity :
| Mfr | Infineon Technologies |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 33 A |
| Pulsed Drain Current | 110 A |
| Power Dissipation | 130 W |
| Gate-Source Voltage | ±20 V |
| Drain-Source On-Resistance(Max) | 44 mΩ |
| Gate Threshold Voltage (Max) | 4 V |
| Gate Threshold Voltage (Min) | 2 V |
| Total Gate Charge (Max) | 71 nC |
| Input Capacitance (Max) | 1960 pF |
| Reverse Transfer Capacitance (Typ) | 40 pF |
| Operating Temperature | -55°C to +175°C |
| Package | D2PAK (TO-263-3) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IRF540NSTRLPBF N-channel MOSFET 100V 33A
The IRF540NSTRLPBF from Infineon is a 100V N-channel HEXFET power MOSFET in a D2PAK (TO-263-3) surface-mount package, designed for high-current switching and power conversion applications where low conduction loss and robust avalanche capability are essential. It is rated for a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 33A at TC=25°C, with a typical on-resistance of 44mΩ at VGS=10V, enabling efficient operation in medium-power DC-DC converters, motor drives, and load switches. The device features a gate charge (Qg) of about 71nC, an input capacitance (Ciss) around 1.96nF, and a threshold voltage (VGS(th)) of typically 4V, providing a balance between switching speed and gate-drive requirements for hard-switched topologies up to a few hundred kilohertz. With a power dissipation rating of 130W at TC=25°C and a junction temperature range from -55°C to +175°C, the IRF540NSTRLPBF is well suited for industrial and consumer environments that demand reliable power handling under sustained stress and thermal cycling.
Alternative Equivalent Models
● IRFZ44N: A 55V, 49A N-channel HEXFET MOSFET in TO-220 with 17.5mΩ RDS(on), offering higher current and lower conduction loss for lower-voltage, high-current applications such as DC-DC converters and motor drives where 100V blocking is not required.
● IRF640: A 200V, 18A N-channel power MOSFET in TO-220 with about 180mΩ RDS(on), targeting higher-voltage offline and inverter stages where a 100V device would be insufficiently rated.
● IRF530NPBF: A 100V, 17A N-channel MOSFET in TO-220AB with 90mΩ RDS(on), providing a lower-current, logic-level-driven alternative for medium-power switching and linear applications where a smaller die and easier drive are more important than ultra-low on-resistance.
The IRF540NSTRLPBF from Infineon is a 100V N-channel HEXFET power MOSFET in a D2PAK (TO-263-3) surface-mount package, designed for high-current switching and power conversion applications where low conduction loss and robust avalanche capability are essential. It is rated for a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 33A at TC=25°C, with a typical on-resistance of 44mΩ at VGS=10V, enabling efficient operation in medium-power DC-DC converters, motor drives, and load switches. The device features a gate charge (Qg) of about 71nC, an input capacitance (Ciss) around 1.96nF, and a threshold voltage (VGS(th)) of typically 4V, providing a balance between switching speed and gate-drive requirements for hard-switched topologies up to a few hundred kilohertz. With a power dissipation rating of 130W at TC=25°C and a junction temperature range from -55°C to +175°C, the IRF540NSTRLPBF is well suited for industrial and consumer environments that demand reliable power handling under sustained stress and thermal cycling.
Alternative Equivalent Models
● IRFZ44N: A 55V, 49A N-channel HEXFET MOSFET in TO-220 with 17.5mΩ RDS(on), offering higher current and lower conduction loss for lower-voltage, high-current applications such as DC-DC converters and motor drives where 100V blocking is not required.
● IRF640: A 200V, 18A N-channel power MOSFET in TO-220 with about 180mΩ RDS(on), targeting higher-voltage offline and inverter stages where a 100V device would be insufficiently rated.
● IRF530NPBF: A 100V, 17A N-channel MOSFET in TO-220AB with 90mΩ RDS(on), providing a lower-current, logic-level-driven alternative for medium-power switching and linear applications where a smaller die and easier drive are more important than ultra-low on-resistance.
