Model No: IRF3205STRLPBF
Infineon Technologies IRF3205STRLPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRF3205STRLPBF
Package: TO-263-3 (D2PAK)
Stock: In stock
Description: IC N-Channel 55 V 110A (Tc) 200W (Tc)
SEMICON NO.: IRF3205STRLPBF
Package: TO-263-3 (D2PAK)
Stock: In stock
Description: IC N-Channel 55 V 110A (Tc) 200W (Tc)
Quantity :
| Mfr | Infineon Technologies |
| Device Type | N-Channel Power MOSFET |
| Drain-Source Voltage (VDSS) | 55 V |
| Continuous Drain Current (ID) @ 25°C | 110 A |
| Pulsed Drain Current (IDM) | 390 A |
| Power Dissipation (PD) @ TC=25°C | 200 W |
| Input Capacitance (Ciss) | 3247 pF @ VDS = 25V |
| Reverse Transfer Capacitance (Crss) | 211 pF |
| Maximum Gate-Source Voltage (VGS) | ±20 V |
| Turn-On Delay Time (td(on)) | 14 ns (typical) |
| Turn-Off Delay Time (td(off)) | 50 ns (typical) |
| Operating Temperature | -55°C to +175°C |
| Package | TO-263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IRF3205STRLPBF N‑Channel Power MOSFET
TheIRF3205STRLPBF is an industry‑standard, single N‑channel power MOSFET from Infineon Technologies (formerly International Rectifier) based on the proven HEXFET® power MOSFET technology. It is optimized for high‑current switching and low conduction loss in demanding 12–48 V power stages. The device is rated for 55 V drain‑source voltage (VDS), 110 A continuous drain current at TC = 25 °C (80 A at TC = 100 °C), and up to 200 W power dissipation at case temperature, making it suitable for robust industrial and high‑power automotive applications. Supplied in a surface‑mount D2PAK (TO‑263) 3‑pin outline with lead‑free finish (PbF) and tape‑and‑reel packaging (STR suffix), the MOSFET supports automated SMD assembly and offers a wide operating junction temperature range of –55 °C to +175 °C.
Technical Specifications & Performance
The IRF3205STRLPBF features an ultra‑low typical on‑resistance of 8.0 mΩ at VGS = 10 V, which significantly reduces conduction losses in high‑current paths and improves overall system efficiency. It offers fast switching characteristics, with typical gate charge Qg of about 146 nC and moderate input capacitance (Ciss ≈ 3247 pF), allowing efficient gate‑drive designs at frequencies commonly used in DC‑DC converters and motor drives. The device is fully avalanche rated and exhibits dynamic dv/dt ruggedness, providing reliable operation under inductive clamping and fault conditions encountered in automotive and industrial environments.
Alternative N‑channel MOSFET Models
● STMicroelectronics STB140NF55: a 55 V, 80 A, 0.0065 Ω (typ.) N‑channel MOSFET in D2PAK based on STripFET™ II technology, offering very low RDS(on) for high‑efficiency 48 V and below power stages.
● onsemi FDD86102: a 60 V N‑channel MOSFET in DPAK using Shielded Gate PowerTrench® technology, targeting medium‑power DC‑DC and motor drive applications with improved switching performance.
● Vishay Siliconix SQM110N05‑06L: an automotive‑grade 55 V N‑channel MOSFET in a surface‑mount package, designed for ruggedness and low on‑resistance in 12 V automotive loads and high‑current switches.
● Infineon IPD320N20N3: a 200 V, 34 A N‑channel StrongIRFET® MOSFET in a PG‑TO252‑3 (DPAK) package, suitable for higher voltage 24–48 V DC and low‑power inverter stages where voltage margin is critical.
TheIRF3205STRLPBF is an industry‑standard, single N‑channel power MOSFET from Infineon Technologies (formerly International Rectifier) based on the proven HEXFET® power MOSFET technology. It is optimized for high‑current switching and low conduction loss in demanding 12–48 V power stages. The device is rated for 55 V drain‑source voltage (VDS), 110 A continuous drain current at TC = 25 °C (80 A at TC = 100 °C), and up to 200 W power dissipation at case temperature, making it suitable for robust industrial and high‑power automotive applications. Supplied in a surface‑mount D2PAK (TO‑263) 3‑pin outline with lead‑free finish (PbF) and tape‑and‑reel packaging (STR suffix), the MOSFET supports automated SMD assembly and offers a wide operating junction temperature range of –55 °C to +175 °C.
Technical Specifications & Performance
The IRF3205STRLPBF features an ultra‑low typical on‑resistance of 8.0 mΩ at VGS = 10 V, which significantly reduces conduction losses in high‑current paths and improves overall system efficiency. It offers fast switching characteristics, with typical gate charge Qg of about 146 nC and moderate input capacitance (Ciss ≈ 3247 pF), allowing efficient gate‑drive designs at frequencies commonly used in DC‑DC converters and motor drives. The device is fully avalanche rated and exhibits dynamic dv/dt ruggedness, providing reliable operation under inductive clamping and fault conditions encountered in automotive and industrial environments.
Alternative N‑channel MOSFET Models
● STMicroelectronics STB140NF55: a 55 V, 80 A, 0.0065 Ω (typ.) N‑channel MOSFET in D2PAK based on STripFET™ II technology, offering very low RDS(on) for high‑efficiency 48 V and below power stages.
● onsemi FDD86102: a 60 V N‑channel MOSFET in DPAK using Shielded Gate PowerTrench® technology, targeting medium‑power DC‑DC and motor drive applications with improved switching performance.
● Vishay Siliconix SQM110N05‑06L: an automotive‑grade 55 V N‑channel MOSFET in a surface‑mount package, designed for ruggedness and low on‑resistance in 12 V automotive loads and high‑current switches.
● Infineon IPD320N20N3: a 200 V, 34 A N‑channel StrongIRFET® MOSFET in a PG‑TO252‑3 (DPAK) package, suitable for higher voltage 24–48 V DC and low‑power inverter stages where voltage margin is critical.
