Model No: IPZ40N04S5L-7R4
Infineon Technologies IPZ40N04S5L-7R4
Manufacturer: Infineon Technologies
SEMICON NO.: IPZ40N04S5L-7R4
Package: PG-TSDSON-8
Stock: In stock
Description: N-Channel 40 V 40A (Tc) 34W (Tc)
SEMICON NO.: IPZ40N04S5L-7R4
Package: PG-TSDSON-8
Stock: In stock
Description: N-Channel 40 V 40A (Tc) 34W (Tc)
Quantity :
| Mfr | Infineon Technologies |
| Product Family | OptiMOS™ 5 |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) @ 25°C | 40 A |
| Gate-Source Voltage (VGS) | ±16 V |
| Power Dissipation (PD) | 34 W |
| Operating Temperature | -55°C to +175°C |
| Package | PG-TSDSON-8 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IPZ40N04S5L-7R4 Infineon OptiMOS™ 5 40V N-Channel Power MOSFET
The IPZ40N04S5L-7R4 is a high-performance N-channel power MOSFET engineered by Infineon Technologies as part of the industry-leading OptiMOS™ 5 family. This 40V device is specifically designed for automotive and industrial power management applications, delivering an optimal balance of ultra-low on-resistance, high current capability, and robust switching performance. Housed in a compact PG-TSDSON-8-32 package (also referred to as S3O8 or TSDSON-8FL), the IPZ40N04S5L-7R4 is fully AEC-Q101 qualified, ensuring the highest level of reliability and ruggedness for demanding automotive environments.
Core Features & Performance Advantages
The IPZ40N04S5L-7R4 leverages Infineon's advanced OptiMOS™ 5 trench technology to deliver superior performance with a logic-level gate drive capability that simplifies circuit design. The device features enhancement-mode operation with a single N-channel configuration, offering industry-leading figure of merit (RDS(on) × Qg) for reduced conduction and switching losses. Its ultra-low on-resistance minimizes power dissipation and improves system efficiency, while the low gate charge enables fast switching transitions with reduced drive requirements. The compact PG-TSDSON-8-32 package provides excellent thermal performance and low parasitic inductance, simplifying PCB layout and enabling high power density in space-constrained designs. Additional features include MSL1 moisture sensitivity level up to 260°C peak reflow soldering, robust avalanche capability, and superior EMI performance that ensures efficient switching with reduced emissions.
Alternative automotive MOSFETs
● IPZ40N04S5L-2R8: Infineon 40V automotive N-channel MOSFET in TSDSON-8 package featuring an ultra-low 2.8mΩ RDS(on) with higher power dissipation of 71W for demanding high-current applications.
● IPZ40N04S5L7R4ATMA1: The tape-and-reel packaging variant of the IPZ40N04S5L-7R4 with identical electrical specifications, optimized for automated high-volume SMT assembly processes.
● DI050N04PT-AQ: Diotec's AEC-Q101 qualified N-channel MOSFET in a 3x3mm package offering PIN-to-PIN compatibility with the IPZ40N04S5L-7R4 and higher drain current capability for enhanced design flexibility.
The IPZ40N04S5L-7R4 is a high-performance N-channel power MOSFET engineered by Infineon Technologies as part of the industry-leading OptiMOS™ 5 family. This 40V device is specifically designed for automotive and industrial power management applications, delivering an optimal balance of ultra-low on-resistance, high current capability, and robust switching performance. Housed in a compact PG-TSDSON-8-32 package (also referred to as S3O8 or TSDSON-8FL), the IPZ40N04S5L-7R4 is fully AEC-Q101 qualified, ensuring the highest level of reliability and ruggedness for demanding automotive environments.
Core Features & Performance Advantages
The IPZ40N04S5L-7R4 leverages Infineon's advanced OptiMOS™ 5 trench technology to deliver superior performance with a logic-level gate drive capability that simplifies circuit design. The device features enhancement-mode operation with a single N-channel configuration, offering industry-leading figure of merit (RDS(on) × Qg) for reduced conduction and switching losses. Its ultra-low on-resistance minimizes power dissipation and improves system efficiency, while the low gate charge enables fast switching transitions with reduced drive requirements. The compact PG-TSDSON-8-32 package provides excellent thermal performance and low parasitic inductance, simplifying PCB layout and enabling high power density in space-constrained designs. Additional features include MSL1 moisture sensitivity level up to 260°C peak reflow soldering, robust avalanche capability, and superior EMI performance that ensures efficient switching with reduced emissions.
Alternative automotive MOSFETs
● IPZ40N04S5L-2R8: Infineon 40V automotive N-channel MOSFET in TSDSON-8 package featuring an ultra-low 2.8mΩ RDS(on) with higher power dissipation of 71W for demanding high-current applications.
● IPZ40N04S5L7R4ATMA1: The tape-and-reel packaging variant of the IPZ40N04S5L-7R4 with identical electrical specifications, optimized for automated high-volume SMT assembly processes.
● DI050N04PT-AQ: Diotec's AEC-Q101 qualified N-channel MOSFET in a 3x3mm package offering PIN-to-PIN compatibility with the IPZ40N04S5L-7R4 and higher drain current capability for enhanced design flexibility.
