Model No: IPB017N10N5
Infineon Technologies IPB017N10N5
Manufacturer: Infineon Technologies
SEMICON NO.: IPB017N10N5
Package: TO-263-7 / D2PAK-7
Stock: In stock
Description: MOSFET N-Ch 100V 180A
SEMICON NO.: IPB017N10N5
Package: TO-263-7 / D2PAK-7
Stock: In stock
Description: MOSFET N-Ch 100V 180A
Quantity :
| Mfr | Infineon Technologies |
| Drain-to-Source Voltage (VDSS) | 100 V |
| Continuous Drain Current (ID) | 260 A @ TC = 25°C |
| Pulsed Drain Current (IDM) | 880 A |
| Drain-to-Source On-Resistance (RDS(on)) | 1.7 mΩ (Max) @ VGS = 10 V |
| Gate-to-Source Voltage (VGS) | ±20 V (Max) |
| Gate Threshold Voltage (VGS(th)) | 2.2 V to 3.4 V |
| Total Gate Charge (Qg) | 132 nC (Typical) @ VDS = 50 V, ID = 120 A |
| Input Capacitance (Ciss) | 5900 pF (Typical) |
| Avalanche Energy Rating (EAS) | Single Pulse: 3.2 J (Typical) |
| Diode Forward Voltage (VSD) | 1.0 V (Typical) @ IS = 260 A |
| Reverse Recovery Charge (Qrr) | 720 nC (Typical) |
| Operating Temperature | -55°C to +175°C |
| Package | TO-263-7 / D2PAK-7 |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
IPB017N10N5 N-Channel Power MOSFET
The IPB017N10N5 is a high-performance N-channel power MOSFET from Infineon Technologies, utilizing advanced OptiMOS™ 5 technology to deliver exceptional efficiency and power density in demanding switching applications. This device features a 100V drain-source voltage rating and a continuous drain current capability of 170A, making it suitable for high-power DC-DC converters, motor drives, and industrial power systems. The MOSFET is engineered with an ultra-low on-state resistance (Rds(on)) and optimized gate charge, providing an excellent figure of merit for reducing both conduction and switching losses. Its primary function is to serve as an efficient power switching element in high-frequency, high-current applications where thermal performance and reliability are critical.
This power MOSFET offers an ultra-low typical Rds(on) of 1.7 mΩ at 10V gate drive, significantly reducing conduction losses in high-current applications. It features a low total gate charge of 210 nC typical, enabling fast switching transitions and high-frequency operation. The device incorporates a robust silicon technology with high avalanche ruggedness and excellent body diode characteristics. Packaged in an advanced TO-263-7 (D2PAK-7) package with an exposed cooling pad, it provides superior thermal performance with a low thermal resistance of 0.5°C/W. The MOSFET is qualified for automotive applications and operates over a junction temperature range of -55°C to +175°C, ensuring reliability in harsh environments.
Alternativepower MOSFET Models
● Texas Instruments CSD19536KCS: A 100V, 150A NexFET™ power MOSFET with low Rds(on) of 2.2 mΩ, offering similar performance in a different package option
● STMicroelectronics STL320N10F7: A 100V, 200A MDmesh™ DM2 MOSFET featuring low gate charge and excellent switching performance for motor drive applications
● ON Semiconductor NVMFS5C446NL: A 100V, 150A PowerTrench® MOSFET with ultra-low Rds(on) technology, designed for high-efficiency power conversion
The IPB017N10N5 is a high-performance N-channel power MOSFET from Infineon Technologies, utilizing advanced OptiMOS™ 5 technology to deliver exceptional efficiency and power density in demanding switching applications. This device features a 100V drain-source voltage rating and a continuous drain current capability of 170A, making it suitable for high-power DC-DC converters, motor drives, and industrial power systems. The MOSFET is engineered with an ultra-low on-state resistance (Rds(on)) and optimized gate charge, providing an excellent figure of merit for reducing both conduction and switching losses. Its primary function is to serve as an efficient power switching element in high-frequency, high-current applications where thermal performance and reliability are critical.
This power MOSFET offers an ultra-low typical Rds(on) of 1.7 mΩ at 10V gate drive, significantly reducing conduction losses in high-current applications. It features a low total gate charge of 210 nC typical, enabling fast switching transitions and high-frequency operation. The device incorporates a robust silicon technology with high avalanche ruggedness and excellent body diode characteristics. Packaged in an advanced TO-263-7 (D2PAK-7) package with an exposed cooling pad, it provides superior thermal performance with a low thermal resistance of 0.5°C/W. The MOSFET is qualified for automotive applications and operates over a junction temperature range of -55°C to +175°C, ensuring reliability in harsh environments.
Alternativepower MOSFET Models
● Texas Instruments CSD19536KCS: A 100V, 150A NexFET™ power MOSFET with low Rds(on) of 2.2 mΩ, offering similar performance in a different package option
● STMicroelectronics STL320N10F7: A 100V, 200A MDmesh™ DM2 MOSFET featuring low gate charge and excellent switching performance for motor drive applications
● ON Semiconductor NVMFS5C446NL: A 100V, 150A PowerTrench® MOSFET with ultra-low Rds(on) technology, designed for high-efficiency power conversion
