Model No: BSS308PEH6327
Infineon Technologies BSS308PEH6327
Manufacturer: Infineon Technologies
SEMICON NO.: BSS308PEH6327
Package: PG-SOT23
Stock: In stock
Description: MOSFET P-Channel 30 V 2A 500mW
SEMICON NO.: BSS308PEH6327
Package: PG-SOT23
Stock: In stock
Description: MOSFET P-Channel 30 V 2A 500mW
Quantity :
| Mfr | Infineon Technologies |
| Product Family | OptiMOS™ P3 |
| Device Type | P-Channel Enhancement MOSFET |
| Drain-Source Voltage (VDSS) | 30 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) | 2 A |
| Power Dissipation (Ptot) | 500 mW |
| Operating Temperature | -55°C to +150°C |
| Package | PG-SOT23 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
BSS308PEH6327 P-Channel Small-Signal MOSFET
The BSS308PEH6327 is an automotive-qualified P-channel enhancement-mode MOSFET from Infineon Technologies' OptiMOS P3 small-signal transistor family, packaged in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount footprint measuring 2.9 x 1.3 x 1.1 mm. It is rated for a 30 V drain-source voltage, a continuous drain current of 2 A at 25°C (1.6 A under SMT thermal conditions), and a maximum power dissipation of 500 mW. The device exhibits a low on-state resistance of 80 mΩ at 10 V gate drive (130 mΩ at 4.5 V logic level) and a typical gate charge of 5 nC at 10 V, with a threshold voltage around 1-2 V. It supports ±20 V gate-source voltage and operates across a junction temperature range of -55°C to +150°C.
The BSS308PEH6327 combines Infineon's advanced OptiMOS P3 trench process with a miniature SOT-23-3 package to deliver an optimal balance of low RDS(on), fast switching, and automotive reliability. Its enhancement-mode P-channel design with a 4.5 V logic-level rating allows direct interfacing with microcontrollers and low-voltage control circuits without requiring charge pumps or level shifters. The 5 nC typical gate charge and 500 pF input capacitance minimize switching losses and drive power, while the 80 mΩ on-resistance at 10 V keeps conduction losses low in 30 V, sub-2 A load paths. Built-in ESD protection, avalanche ruggedness, and a dv/dt rating enhance system robustness in electrically noisy automotive and industrial environments.The device also features fast switching characteristics with turn-on delay of 5.6 ns, rise time of 7.7 ns, and fall time of 2.8 ns, enabling efficient high-frequency operation.
Alternative P-channel MOSFET Models
● VB2355 (VBsemi): SOT-23 pin-compatible upgrade with 46 mΩ RDS(on) at 10 V, -5.6 A continuous current, and ESD protection, delivering lower conduction loss and higher current margin than the original Infineon device.
● SSM3J332R,LF(ES) (ElecSuper): Automotive-grade SOT-23 P-channel MOSFET offering 30 V rating and 2 A-class switching for cost-sensitive, RoHS-compliant replacement designs.
● TPM3407AS3 (TECH PUBLIC): SOT-23-packaged 30 V P-channel MOSFET with logic-level gate drive, targeted at consumer and industrial load-switch applications needing stable local supply.
The BSS308PEH6327 is an automotive-qualified P-channel enhancement-mode MOSFET from Infineon Technologies' OptiMOS P3 small-signal transistor family, packaged in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount footprint measuring 2.9 x 1.3 x 1.1 mm. It is rated for a 30 V drain-source voltage, a continuous drain current of 2 A at 25°C (1.6 A under SMT thermal conditions), and a maximum power dissipation of 500 mW. The device exhibits a low on-state resistance of 80 mΩ at 10 V gate drive (130 mΩ at 4.5 V logic level) and a typical gate charge of 5 nC at 10 V, with a threshold voltage around 1-2 V. It supports ±20 V gate-source voltage and operates across a junction temperature range of -55°C to +150°C.
The BSS308PEH6327 combines Infineon's advanced OptiMOS P3 trench process with a miniature SOT-23-3 package to deliver an optimal balance of low RDS(on), fast switching, and automotive reliability. Its enhancement-mode P-channel design with a 4.5 V logic-level rating allows direct interfacing with microcontrollers and low-voltage control circuits without requiring charge pumps or level shifters. The 5 nC typical gate charge and 500 pF input capacitance minimize switching losses and drive power, while the 80 mΩ on-resistance at 10 V keeps conduction losses low in 30 V, sub-2 A load paths. Built-in ESD protection, avalanche ruggedness, and a dv/dt rating enhance system robustness in electrically noisy automotive and industrial environments.The device also features fast switching characteristics with turn-on delay of 5.6 ns, rise time of 7.7 ns, and fall time of 2.8 ns, enabling efficient high-frequency operation.
Alternative P-channel MOSFET Models
● VB2355 (VBsemi): SOT-23 pin-compatible upgrade with 46 mΩ RDS(on) at 10 V, -5.6 A continuous current, and ESD protection, delivering lower conduction loss and higher current margin than the original Infineon device.
● SSM3J332R,LF(ES) (ElecSuper): Automotive-grade SOT-23 P-channel MOSFET offering 30 V rating and 2 A-class switching for cost-sensitive, RoHS-compliant replacement designs.
● TPM3407AS3 (TECH PUBLIC): SOT-23-packaged 30 V P-channel MOSFET with logic-level gate drive, targeted at consumer and industrial load-switch applications needing stable local supply.
