Model No: BSC026N08NS5
Infineon Technologies BSC026N08NS5
Manufacturer: Infineon Technologies
SEMICON NO.: BSC026N08NS5
Package: PG-TDSON-8
Stock: In stock
Description: N-Channel Power MOSFET 80 V 23A 100A
SEMICON NO.: BSC026N08NS5
Package: PG-TDSON-8
Stock: In stock
Description: N-Channel Power MOSFET 80 V 23A 100A
Quantity :
| Mfr | Infineon Technologies |
| Product Family | OptiMOS™ 5 |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (VDSS) | 80 V |
| Continuous Drain Current (ID) @ 25°C | 100 A (Tc) / 23 A (Ta) |
| Power Dissipation (PD) | 156 W (Tc) / 2.5 W (Ta) |
| Gate-Source Voltage (VGS) | ±20 V |
| Operating Temperature | -55°C to +150°C |
| Package | PG-TDSON-8 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
BSC026N08NS5 Infineon OptiMOS™ 5 N-Channel Power MOSFET
The BSC026N08NS5 is a high-performance N-channel power MOSFET engineered by Infineon Technologies as part of the advanced OptiMOS™ 5 family. This 80V device is specifically optimized for synchronous rectification applications, delivering industry-leading low on-resistance and exceptional switching performance that significantly enhance system efficiency in power conversion designs. Housed in a compact PG-TDSON-8 surface-mount package (also referred to as SuperSO8), the BSC026N08NS5 represents a state-of-the-art solution for designers seeking to maximize power density while minimizing conduction and switching losses in space-constrained applications.
Core Features & Performance Advantages
The BSC026N08NS5 leverages Infineon's advanced OptiMOS™ 5 trench technology to deliver a 43% reduction in RDS(on) and a 44% reduction in output capacitance compared to the previous generation. These improvements translate directly into tangible system benefits: reduced conduction and switching losses, minimized voltage overshoot, increased power density, and reduced paralleling requirements. The device is optimized for synchronous rectification topologies and is ideally suited for high switching frequency applications. Its superior thermal resistance characteristics ensure efficient heat dissipation, while the 100% avalanche testing guarantees reliable operation under high-energy stress conditions. The TDSON-8 package offers excellent mechanical stability and low parasitic inductance, further enhancing high-frequency performance and simplifying PCB layout.
Target Applications
The BSC026N08NS5 is primarily designed for synchronous rectification in server and desktop power supplies, as well as telecom infrastructure equipment. Beyond these core markets, the device finds extensive use in 48V intermediate bus converters (IBC), cordless power tools, outdoor power equipment, DIN rail power supplies, solar energy systems, low-voltage drives, and AC-DC adapters. Its combination of ultra-low on-resistance, high current capability, and superior switching characteristics makes it an ideal choice for high-efficiency DC-DC converters, switch-mode power supplies (SMPS), motor control circuits, and other high-frequency power management applications requiring compact form factors and robust thermal performance.
Alternative N-channel MOSFETs
● BSZ084N08NS5ATMA1: Infineon OptiMOS™ N-channel 80V MOSFET in TSDSON-8 package offering 40A current capability with 8.4mΩ on-resistance, suitable for lower-power synchronous rectification applications.
● BSC052N08NS5: Infineon 80V N-channel MOSFET in PG-TDSON-8 package featuring 5.2mΩ RDS(on) and 19A current rating, providing a higher-resistance alternative for less demanding designs.
● IPC100N04S51R9ATMA1: Infineon 40V N-channel MOSFET in TDSON-8 with 100A current capability and ultra-low 1.9mΩ on-resistance, ideal for applications where lower voltage rating is acceptable.
● IRF7759L2PBF: International Rectifier MOSFET optimized for synchronous rectification with similar performance characteristics, offering a drop-in alternative from a different manufacturer.
The BSC026N08NS5 is a high-performance N-channel power MOSFET engineered by Infineon Technologies as part of the advanced OptiMOS™ 5 family. This 80V device is specifically optimized for synchronous rectification applications, delivering industry-leading low on-resistance and exceptional switching performance that significantly enhance system efficiency in power conversion designs. Housed in a compact PG-TDSON-8 surface-mount package (also referred to as SuperSO8), the BSC026N08NS5 represents a state-of-the-art solution for designers seeking to maximize power density while minimizing conduction and switching losses in space-constrained applications.
Core Features & Performance Advantages
The BSC026N08NS5 leverages Infineon's advanced OptiMOS™ 5 trench technology to deliver a 43% reduction in RDS(on) and a 44% reduction in output capacitance compared to the previous generation. These improvements translate directly into tangible system benefits: reduced conduction and switching losses, minimized voltage overshoot, increased power density, and reduced paralleling requirements. The device is optimized for synchronous rectification topologies and is ideally suited for high switching frequency applications. Its superior thermal resistance characteristics ensure efficient heat dissipation, while the 100% avalanche testing guarantees reliable operation under high-energy stress conditions. The TDSON-8 package offers excellent mechanical stability and low parasitic inductance, further enhancing high-frequency performance and simplifying PCB layout.
Target Applications
The BSC026N08NS5 is primarily designed for synchronous rectification in server and desktop power supplies, as well as telecom infrastructure equipment. Beyond these core markets, the device finds extensive use in 48V intermediate bus converters (IBC), cordless power tools, outdoor power equipment, DIN rail power supplies, solar energy systems, low-voltage drives, and AC-DC adapters. Its combination of ultra-low on-resistance, high current capability, and superior switching characteristics makes it an ideal choice for high-efficiency DC-DC converters, switch-mode power supplies (SMPS), motor control circuits, and other high-frequency power management applications requiring compact form factors and robust thermal performance.
Alternative N-channel MOSFETs
● BSZ084N08NS5ATMA1: Infineon OptiMOS™ N-channel 80V MOSFET in TSDSON-8 package offering 40A current capability with 8.4mΩ on-resistance, suitable for lower-power synchronous rectification applications.
● BSC052N08NS5: Infineon 80V N-channel MOSFET in PG-TDSON-8 package featuring 5.2mΩ RDS(on) and 19A current rating, providing a higher-resistance alternative for less demanding designs.
● IPC100N04S51R9ATMA1: Infineon 40V N-channel MOSFET in TDSON-8 with 100A current capability and ultra-low 1.9mΩ on-resistance, ideal for applications where lower voltage rating is acceptable.
● IRF7759L2PBF: International Rectifier MOSFET optimized for synchronous rectification with similar performance characteristics, offering a drop-in alternative from a different manufacturer.
