Model No: G60N100BNTD
Fairchild G60N100BNTD
Manufacturer: Fairchild
SEMICON NO.: G60N100BNTD
Package: TO-264-3
Stock: In stock
Description: NPT IGBT N-Ch 1000V 60A
SEMICON NO.: G60N100BNTD
Package: TO-264-3
Stock: In stock
Description: NPT IGBT N-Ch 1000V 60A
Quantity :
| Mfr | Fairchild |
| Device Type | NPT-Trench N-Channel IGBT |
| Collector-Emitter Voltage | 1000 V |
| Gate-Emitter Voltage | ±25 V |
| Continuous Collector Current | 60 A @ 25°C, 42 A @ 100°C |
| Pulsed Collector Current | 120 A |
| Diode Continuous Forward Current | 15 A |
| Maximum Power Dissipation | 180 W |
| Operating Temperature | -55°C to +150°C |
| Package | TO-264-3 |
| Mounting Type | Through Hole |
| Compliance | RoHS Compliant |
The G60N100BNTD, also known as FGL60N100BNTD, is an NPT trench IGBT originally manufactured by Fairchild Semiconductor, packaged in TO-264-3 through-hole form. Rated for 1000 V collector-emitter breakdown voltage and continuous 60 A collector current, this power transistor delivers low saturation voltage and fast switching performance, with 180 W maximum power dissipation and a pulsed collector current up to 120 A. It is designed for high voltage switching circuits, offering stable power handling and rugged thermal performance for industrial power conversion systems.
Key Features
● 1000 V VCEO rating, 60 A continuous collector current, 120 A peak pulsed collector current
● Low VCE(sat) of 2.9 V at 15 V gate drive and 60 A load to reduce conduction loss
● Maximum power dissipation of 180 W, operating junction temperature range from -55 ℃ to 150 ℃
● NPT trench IGBT structure with fast switching speed and optimized gate charge of 275 nC
● Robust short circuit withstand capability for power inverter and welding equipment
FAQ
Q: What is the difference between G60N100BNTD and FGL60N100BNTD?
A: They refer to the same Fairchild IGBT, G60N100BNTD is the commonly printed marking on the package.
Q: Does this device need a gate resistor?
● 1000 V VCEO rating, 60 A continuous collector current, 120 A peak pulsed collector current
● Low VCE(sat) of 2.9 V at 15 V gate drive and 60 A load to reduce conduction loss
● Maximum power dissipation of 180 W, operating junction temperature range from -55 ℃ to 150 ℃
● NPT trench IGBT structure with fast switching speed and optimized gate charge of 275 nC
● Robust short circuit withstand capability for power inverter and welding equipment
FAQ
Q: What is the difference between G60N100BNTD and FGL60N100BNTD?
A: They refer to the same Fairchild IGBT, G60N100BNTD is the commonly printed marking on the package.
Q: Does this device need a gate resistor?
Alternative high voltage IGBT Models
● FGA60N100ANTD: Fairchild 1000V 60A IGBT with similar electrical parameters and TO-264 package for direct drop-in replacement.
● IRG4PH50UD: Infineon 1200V 40A IGBT with integrated anti-parallel diode for inverter circuits needing higher voltage margin.
● FGL40N120AND: Fairchild 1200V 40A IGBT in TO-264 package for designs requiring higher breakdown voltage at lower current.
● FGA60N100ANTD: Fairchild 1000V 60A IGBT with similar electrical parameters and TO-264 package for direct drop-in replacement.
● IRG4PH50UD: Infineon 1200V 40A IGBT with integrated anti-parallel diode for inverter circuits needing higher voltage margin.
● FGL40N120AND: Fairchild 1200V 40A IGBT in TO-264 package for designs requiring higher breakdown voltage at lower current.
