Model No: SBR10E45P5-13
Diodes Incorporated SBR10E45P5-13
Manufacturer: Diodes Incorporated
SEMICON NO.: SBR10E45P5-13
Package: Power-DI-5
Stock: In stock
Description: IC Single Rectifier Diode
SEMICON NO.: SBR10E45P5-13
Package: Power-DI-5
Stock: In stock
Description: IC Single Rectifier Diode
Quantity :
| Mfr | Diodes Incorporated |
| Product Series | SBR® (Super Barrier Rectifier) |
| Device Type | Single Rectifier Diode |
| Technology | Super Barrier Rectifier (SBR) |
| DC Reverse Voltage (Vr) | 45 V |
| Average Rectified Current (Io) | 10 A |
| Non-Repetitive Peak Surge Current (Ifsm) | 275 A |
| Forward Voltage Drop (Vf) @ 10A | 420 mV / 470 mV |
| Reverse Current (Ir) @ 45V | 50 µA / 280 µA |
| Speed / Recovery Time | Fast Recovery (< 500 ns) |
| Operating Temperature | -55°C to +150°C |
| Package | Power-DI-5 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
SBR10E45P5-13 Single Rectifier Diode
The SBR10E45P5-13 is a high-efficiency, low forward voltage drop Schottky barrier rectifier diode from Diodes Incorporated, designed for demanding power conversion and switching applications. This device features a dual center-tap common cathode configuration, integrating two independent 45V, 10A Schottky diodes in a single package. Utilizing advanced trench Schottky barrier technology, it delivers superior performance compared to conventional planar Schottky diodes, with exceptionally low forward voltage drop and minimal reverse recovery time. Operating at high frequencies with low switching losses, it is ideal for use as a secondary side rectifier in switch-mode power supplies, freewheeling diodes in power converters, and reverse polarity protection circuits where efficiency and thermal management are critical.
SBR10E45P5-13Schottky rectifier Features and Advantages
This Schottky rectifier offers a low typical forward voltage of 0.55V at 5A and 125°C, significantly reducing conduction losses and improving system efficiency. It features a maximum repetitive peak reverse voltage of 45V and a continuous forward current rating of 10A per diode. The device exhibits a very low typical reverse leakage current of 250μA at its rated voltage and 125°C. Key specifications include an operating junction temperature range of -55°C to +150°C and a low thermal resistance of 2.5°C/W junction-to-case.
The SBR10E45P5-13 delivers outstanding efficiency through its combination of low forward voltage drop and negligible reverse recovery charge, which minimizes both conduction and switching losses. The dual common-cathode configuration in a single package saves board space, reduces component count, and simplifies PCB layout compared to using two discrete diodes. Its robust construction and high-temperature capability ensure reliable operation in demanding environments, making it a high-performance, cost-effective solution for modern power electronics.
Alternative Schottky diode Models
● ON Semiconductor MBRD1045CTG: A dual 45V, 10A Schottky rectifier in a TO-220 package, offering similar electrical characteristics for general-purpose applications.
● Vishay VS-10CWQ045-M3: A 45V, 10A Schottky diode utilizing Trench MOS barrier technology for very low forward voltage and leakage current.
● STMicroelectronics STPS10L45D: A dual Schottky rectifier designed for low forward voltage drop and high surge current capability in switching power supplies.
The SBR10E45P5-13 is a high-efficiency, low forward voltage drop Schottky barrier rectifier diode from Diodes Incorporated, designed for demanding power conversion and switching applications. This device features a dual center-tap common cathode configuration, integrating two independent 45V, 10A Schottky diodes in a single package. Utilizing advanced trench Schottky barrier technology, it delivers superior performance compared to conventional planar Schottky diodes, with exceptionally low forward voltage drop and minimal reverse recovery time. Operating at high frequencies with low switching losses, it is ideal for use as a secondary side rectifier in switch-mode power supplies, freewheeling diodes in power converters, and reverse polarity protection circuits where efficiency and thermal management are critical.
SBR10E45P5-13Schottky rectifier Features and Advantages
This Schottky rectifier offers a low typical forward voltage of 0.55V at 5A and 125°C, significantly reducing conduction losses and improving system efficiency. It features a maximum repetitive peak reverse voltage of 45V and a continuous forward current rating of 10A per diode. The device exhibits a very low typical reverse leakage current of 250μA at its rated voltage and 125°C. Key specifications include an operating junction temperature range of -55°C to +150°C and a low thermal resistance of 2.5°C/W junction-to-case.
The SBR10E45P5-13 delivers outstanding efficiency through its combination of low forward voltage drop and negligible reverse recovery charge, which minimizes both conduction and switching losses. The dual common-cathode configuration in a single package saves board space, reduces component count, and simplifies PCB layout compared to using two discrete diodes. Its robust construction and high-temperature capability ensure reliable operation in demanding environments, making it a high-performance, cost-effective solution for modern power electronics.
Alternative Schottky diode Models
● ON Semiconductor MBRD1045CTG: A dual 45V, 10A Schottky rectifier in a TO-220 package, offering similar electrical characteristics for general-purpose applications.
● Vishay VS-10CWQ045-M3: A 45V, 10A Schottky diode utilizing Trench MOS barrier technology for very low forward voltage and leakage current.
● STMicroelectronics STPS10L45D: A dual Schottky rectifier designed for low forward voltage drop and high surge current capability in switching power supplies.
